公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。

公开(公告)号：US10026861B2

公开(公告)日：2018-07-17

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073 ,  H01L21/02

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

公开(公告)号：US20130098433A1

公开(公告)日：2013-04-25

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/02966 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Abstract translation: 一种改进的光电器件及其制造方法，其包括与半导体吸收层相邻的界面层，其中界面层包括半导体层中的材料，该材料从接触吸收层的界面层的侧面减少到 接口层的相对侧。