摘要:
The invention relates to a circuit carrier (11), comprising a digital circuit, which contains at least two components (12, 14) that are electrically connected to each other (19, 21, 20). Additionally, an electric shield (24) is provided. According to the invention, the electric shield (24) and a conducting path (21) for electrically connecting the components (12, 14) are realized by means of a single layered composite (18). In particular, the electric shield (24) and the conducting path (21) are formed by the same electrically conductive layer, wherein a hole (25) ensures complete electrical insulation of the conducting path (21) from the shield (24). The invention further relates to a method for producing such a circuit carrier.
摘要:
The invention relates to a circuit carrier (11), comprising a digital circuit, which contains at least two components (12, 14) that are electrically connected to each other (19, 21, 20). Additionally, an electric shield (24) is provided. According to the invention, the electric shield (24) and a conducting path (21) for electrically connecting the components (12, 14) are realized by means of a single layered composite (18). In particular, the electric shield (24) and the conducting path (21) are formed by the same electrically conductive layer, wherein a hole (25) ensures complete electrical insulation of the conducting path (21) from the shield (24). The invention further relates to a method for producing such a circuit carrier.
摘要:
A substrate of an integrated circuit has a first surface and an opposing second surface. A functionalized region is formed at least on the first surface. At least one electrical through-plating is provided as a through-hole which is continuously filled with an electrically conductive material and which runs from the first surface to the second surface through the substrate. To ensure that the through-plating can be reliably produced and is provided in a space-saving manner, the through-hole has at least one gradation on which a transition occurs from a smaller hole cross-section on the side of the first surface to a larger hole cross-section on the side of the second surface.
摘要:
At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.
摘要:
At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 μm and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.