公开(公告)号：US20050029607A1

公开(公告)日：2005-02-10

申请号：US10897449

申请日：2004-07-22

申请人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

发明人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

IPC分类号： G01L9/00 ,  G01L9/12 ,  H01L27/01

CPC分类号： G01L9/0073

摘要： A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.

摘要翻译： 用于制造电容式压力测量的装置包括绝缘基极，由由单晶和多晶半导体材料中的至少一种构成的层，用于电连接电极的接触装置和至少一个半导体元件 ，全部集成到半导体衬底上。 用于基极的连接由电绝缘的导电多晶半导体层形成。 制造该器件的方法包括在用于形成基极的半导体衬底上的两个绝缘层之间布置导电多晶半导体层的步骤。

公开(公告)号：US07321156B2

公开(公告)日：2008-01-22

申请号：US10897449

申请日：2004-07-22

申请人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

发明人： Frank Fischer ,  Hans-Peter Trah ,  Franz Laermer ,  Lars Metzger

IPC分类号： H01L29/82

CPC分类号： G01L9/0073

摘要： A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.

摘要翻译： 用于制造电容式压力测量的装置包括绝缘基极，由由单晶和多晶半导体材料中的至少一种构成的层，用于电连接电极的接触装置和至少一个半导体元件 ，全部集成到半导体衬底上。 用于基极的连接由电绝缘的导电多晶半导体层形成。 制造该器件的方法包括在用于形成基极的半导体衬底上的两个绝缘层之间布置导电多晶半导体层的步骤。

公开(公告)号：US07709933B2

公开(公告)日：2010-05-04

申请号：US10742055

申请日：2003-12-18

申请人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

发明人： Hans Artmann ,  Thorsten Pannek ,  Hans-Peter Trah ,  Franz Laermer

IPC分类号： H01L31/036

CPC分类号： C04B38/007 ,  B81C1/00492 ,  B81C2201/0115 ,  C04B2111/28 ,  C04B35/14

摘要： A structural element having a region of porous silicon or porous silicon oxide, which was obtained from a porization, starting from an edge area of the region, in at least largely crystalline silicon. Relative to the edge area, the crystalline silicon has a crystal orientation that has an orientation that differs from a orientation or from an orientation that is equivalent for reasons of symmetry. This structural element is suited for use in a mass-flow sensor, in a component for the thermal decoupling of sensor and/or actuator structures, or a gas sensor. Furthermore, methods for setting the thermal conductivity of a region of porous silicon or porous silicon oxide of a structural element are described. In particular, in a porization of crystalline silicon, starting from an edge area of the region, the crystalline orientation of the silicon relative to the edge area is selected such that a thermal conductivity comes about along a direction perpendicular to the edge area that differs from, in particular is lower than, the thermal conductivity, that comes about in this direction in an otherwise analogous porization of crystalline silicon having a orientation or an equivalent orientation relative to this edge area.

摘要翻译： 具有多孔硅或多孔氧化硅区域的结构元件，其从至少大部分为晶体硅的区域的边缘区域开始从孔化获得。 相对于边缘区域，晶体硅具有取向不同于<100>取向的晶体取向或者由于对称原因等同的取向。 该结构元件适用于质量流量传感器，用于传感器和/或致动器结构或气体传感器的热解耦的部件。 此外，描述了用于设定结构元件的多孔硅或多孔氧化硅区域的热导率的方法。 特别地，在从区域的边缘区域开始的晶体硅的孔化中，选择硅相对于边缘区域的晶体取向，使得热导率沿垂直于与边缘区域不同的边缘区域的方向 ，特别是低于导热率，其在相对于该边缘区域具有<100>取向或等同取向的晶体硅的另外类似的孔化中在该方向上。

公开(公告)号：US5595940A

公开(公告)日：1997-01-21

申请号：US446271

申请日：1995-05-22

申请人： Hans-Peter Trah ,  Franz Laermer ,  Andrea Schilp

发明人： Hans-Peter Trah ,  Franz Laermer ,  Andrea Schilp

IPC分类号： G01P15/125 ,  G01P15/08 ,  H01L29/84 ,  H01L49/00 ,  H01L21/302

CPC分类号： G01P15/0802

摘要： In a method of producing micromechanical structures on semiconductor components, in particular on the surface of a wafer containing integrated circuits, provision is made for the micromechanical structures to be provided subsequently on a fully processed semiconductor component using process steps which are normally applied in semiconductor component production and are at most slightly modified, but independently of the semiconductor component production process.

摘要翻译： 在一种在半导体部件上制造微机械结构的方法中，特别是在含有集成电路的晶片的表面上，提供随后在完全处理的半导体部件上提供微机械结构的方法，该方法通常应用于半导体部件 生产和修饰最多，但与半导体元件生产过程无关。

公开(公告)号：US5242533A

公开(公告)日：1993-09-07

申请号：US828033

申请日：1992-01-30

申请人： Hans-Peter Trah ,  Guenther Findler ,  Joerg Muchow

发明人： Hans-Peter Trah ,  Guenther Findler ,  Joerg Muchow

IPC分类号： H01L21/22 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/84

CPC分类号： H01L21/30604 ,  H01L21/3063 ,  H01L21/3081 ,  Y10S438/924

摘要： Processes are proposed for structuring monocrystalline semiconductor substrates provided with a basic doping, in particular silicon substrates with a (100) or (110) crystal orientation. In this process, at least one main surface of the semiconductor substrate is passivated by means of a structured masking layer, and in an etching step etching into the semiconductor substrate is done anisotropically through openings in the masking layer. It is proposed that as the masking layer (12), a structured, preferably monocrystalline, layer of the basic material of the semiconductor substrate be used, which is doped such that a pn junction is produced between the masking layer (12) and the semiconductor substrate (10), the junction being polarized in the depletion direction and serving as an etch stop. It is also proposed that the semiconductor substrate (10) be formed of a substrate (11) and at least one layer (13), applied thereon, with buried zones (16), with pn junctions being produced between the zones (16) and the substrate (11). Zones (16) that are electrically insulated from one another and the semiconductor substrate (10) are electrically bonded, so that the pn junctions are polarized in the depletion direction and serve as an etch stop for deep etching.

摘要翻译： 提出了用于构造设置有基本掺杂的单晶半导体衬底的工艺，特别是具有（100）或（110）晶体取向的硅衬底。 在该工艺中，半导体衬底的至少一个主表面通过结构化掩模层钝化，并且在蚀刻步骤中，通过掩模层中的开口各向异性地进行蚀刻到半导体衬底中。 提出，作为掩模层（12），使用半导体衬底的基本材料的结构化的，优选单晶层，其被掺杂以使得在掩模层（12）和半导体层（12）之间产生pn结 衬底（10），所述结在耗尽方向上极化并用作蚀刻停止。 还提出半导体衬底（10）由衬底（11）和其上施加有至少一个层（13）形成，具有掩埋区域（16），在区域（16）和 基板（11）。 彼此电绝缘的区域（16）和半导体衬底（10）电连接，使得pn结在耗尽方向上极化，并用作深刻蚀的蚀刻停止。

公开(公告)号：US5216273A

公开(公告)日：1993-06-01

申请号：US762940

申请日：1991-09-19

申请人： Christian Doering ,  Thomas Grauer ,  Michael Mettner ,  Armin Schuelke ,  Jiri Marek ,  Hans-Peter Trah ,  Joerg Muchow ,  Martin Willmann

发明人： Christian Doering ,  Thomas Grauer ,  Michael Mettner ,  Armin Schuelke ,  Jiri Marek ,  Hans-Peter Trah ,  Joerg Muchow ,  Martin Willmann

IPC分类号： F16K31/02 ,  F15C5/00 ,  F16K99/00

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/008

摘要： A microwave is made of a stack of layers. A sculptured silicon substrate is held between two covers each consisting of one or more layers. The inlet and the outlet of the microvalve are formed by perforations in the respective covers. A central valve plate is sculptured out of the silicon substrate with surfaces respectively facing the two covers in the region of the inlet and outlet in a symmetrical fashion. The valve plate is connected to the outer frame portion of the silicon substrate by one or more silicon strips. The valve plate is also shaped as a closure member near the inlet and/or the outlet. Electrodes are provided on the covers opposite the valve plate so that the valve can be electrostatically actuated with the valve plate serving as counterelectrode for these electrodes on the covers.

摘要翻译： 微波由一叠层组成。 雕刻的硅衬底保持在两个盖之间，每个盖由一层或多层组成。 微型阀的入口和出口由相应盖子中的穿孔形成。 中心阀板从硅衬底雕刻出来，其表面分别以对称的方式在入口和出口的区域中面对两个盖。 阀板通过一个或多个硅带连接到硅衬底的外框部分。 阀板也在入口和/或出口附近形成为封闭构件。 电极设置在与阀板相对的盖上，使得阀可以被静电驱动，阀板用作反射电极，用于盖上的这些电极。

公开(公告)号：US06863438B2

公开(公告)日：2005-03-08

申请号：US10070973

申请日：2001-06-07

申请人： Thorsten Pannek ,  Hans-Peter Trah

发明人： Thorsten Pannek ,  Hans-Peter Trah

IPC分类号： G01J5/12 ,  G01J5/16 ,  G01K7/02 ,  H01L35/14 ,  H01L35/16 ,  H01L35/32 ,  G01J5/00 ,  H01L35/28

CPC分类号： G01K7/028 ,  G01J5/12

摘要： A micropatterned thermosensor, e.g., an infrared sensor, includes a supporting body and at least one thermocouple arranged thereon. The thermocouple also has a first material and a second material, which together form, at least in a pointwise manner, at least one thermal contact. Furthermore, it is provided that the first and/or the second material are configured at least regionally in the form of a meander-shaped or undulating-type circuit trace and extend on the supporting body. In addition, a micropatterned thermosensor having such patterned circuit traces, in which the first material is platinum or aluminum, and the second material is doped or undoped polysilicon-germanium.

摘要翻译： 微图案化的热传感器，例如红外传感器，包括支撑体和布置在其上的至少一个热电偶。 热电偶还具有第一材料和第二材料，它们至少以点方式一起形成至少一个热接触。 此外，提供第一和/或第二材料至少区域地配置为曲折形或波状型电路迹线的形式，并在支撑体上延伸。 此外，具有这种图案化电路迹线的微图案化热敏传感器，其中第一材料是铂或铝，第二材料是掺杂或未掺杂的多晶硅。

公开(公告)号：US5402937A

公开(公告)日：1995-04-04

申请号：US760782

申请日：1991-09-16

申请人： Juergen Buchholz ,  Martin Maier ,  Udo Jauernig ,  Hans-Peter Trah

发明人： Juergen Buchholz ,  Martin Maier ,  Udo Jauernig ,  Hans-Peter Trah

IPC分类号： F02M43/04 ,  F02M51/08 ,  F02M61/18 ,  F02M67/12 ,  F02M69/04 ,  F02M67/02

CPC分类号： F02M69/047 ,  F02M61/1853 ,  F02M67/12 ,  F02M2051/08

摘要： A valve for injecting a fuel/gas mixture that includes a perforated body, which comprises an upper thin plate and a lower thin plate, both of which are for instance embodied of monocrystalline silicon. At least one conduit is formed between the upper thin plate and the lower thin plate, by way of which conduit the gas meets the fuel injected through the at least one injection port. It is unnecessary to adjust the metered gas quantity. The perforated body and the valve are particularly suitable for injection systems in mixture-compressing internal combustion engines with externally supplied ignition.

摘要翻译： 一种用于喷射包括穿孔体的燃料/气体混合物的阀，其包括上薄板和下薄板，这两者都例如体现为单晶硅。 在上薄板和下薄板之间形成至少一个管道，通过该导管将气体与通过至少一个喷射口喷射的燃料相接触。 无需调节计量气体量。 穿孔体和阀门特别适用于混合压缩内燃机和外部提供的点火装置的注射系统。

公开(公告)号：US5261639A

公开(公告)日：1993-11-16

申请号：US974014

申请日：1992-11-10

申请人： Frank Bantien ,  Udo Jauernig ,  Hans-Peter Trah ,  Kurt Weiblen

发明人： Frank Bantien ,  Udo Jauernig ,  Hans-Peter Trah ,  Kurt Weiblen

IPC分类号： B05B1/30 ,  F02M51/06 ,  F02M61/04 ,  F02M61/16 ,  F02M61/18 ,  F02M69/04 ,  F16K11/044 ,  F16K31/02 ,  F16K7/14 ,  B05B1/02 ,  F16K31/06

CPC分类号： F02M69/047 ,  F02M51/0603 ,  F02M51/0678 ,  F02M51/0685 ,  F02M61/047 ,  F02M61/166 ,  F02M61/18 ,  F02M61/1853

摘要： A valve for metering a fluid including a small upper plate, a small middle plate and a small lower plate. The small middle plate has a closing element with a diaphragm region surrounding the closing element. The stroke of the closing element is limited in an axial direction by the small upper plate and by a valve seat of the small lower plate. As a result, very accurate metering of the fluid is possible. The valve is especially suitable as an injection valve for injection systems of mixture-compressing internal combustion engines with externally supplied ignition.

摘要翻译： 一种用于计量包括小上板，小中间板和小下板的流体的阀。 小中间板具有闭合元件，该闭合元件具有围绕闭合元件的隔膜区域。 关闭元件的行程通过小上板和小下板的阀座在轴向受到限制。 因此，非常精确地计量流体是可能的。 该阀特别适合作为混合压缩内燃机与外部提供的点火装置的注射系统的注射阀。

公开(公告)号：US5254209A

公开(公告)日：1993-10-19

申请号：US960817

申请日：1992-10-08

申请人： Steffen Schmidt ,  Hans-Peter Trah ,  Franz Riedinger

发明人： Steffen Schmidt ,  Hans-Peter Trah ,  Franz Riedinger

IPC分类号： C23F1/02 ,  B81C1/00 ,  C30B33/00 ,  G03F9/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C30B29/06 ,  B81C1/00626 ,  C30B33/00 ,  G03F9/7003 ,  G03F9/7084

摘要： A method of making micromechanical structures from silicon involves cutting a monocrystalline silicon wafer. The orientation of the crystal structure relative to the flat of the wafer is first determined, and this information is taken into account in the subsequent structuring steps.

摘要翻译： 从硅制造微机械结构的方法涉及切割单晶硅晶片。 首先确定晶体结构相对于晶片的平面的取向，并且在随后的结构化步骤中考虑该信息。