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1.发明授权Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate 失效减少移动物体从金属氧化物陶瓷扩散到基底中公开(公告)号：US06204158B1
公开(公告)日：2001-03-20
申请号：US09216371
申请日：1998-12-18
申请人： Bryan C. Hendrix , Frank S. Hintermaier , Jeffrey F. Roeder , Thomas H. Baum , Debra A. Desrochers
发明人： Bryan C. Hendrix , Frank S. Hintermaier , Jeffrey F. Roeder , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2138
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A scavenger layer is provided to prevent the diffusion of an excess mobile specie from a metal oxide ceramic into unwanted parts of a device. The scavenger layer is provided above the metal oxide ceramic. As the excess mobile specie diffuses out of the metal oxide ceramic, it migrates toward the scavenger layer and reacts with it. The reaction consumes the excess mobile specie.
摘要翻译： 提供清除层以防止多余的移动物质从金属氧化物陶瓷扩散到装置的不需要的部分。 在金属氧化物陶瓷上方设置有清除层。 当多余的流动物质从金属氧化物陶瓷中扩散时，它迁移到清除剂层并与其反应。 反应消耗了多余的流动物质。
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2.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides 有权使用Bi alcoxides制备铁电薄膜的低温CVD工艺公开(公告)号：US06500489B1
公开(公告)日：2002-12-31
申请号：US09208541
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C23C16/40 , C23C16/407 , C23C16/4485 , C23C16/56 , H01L21/31691
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个烷氧基的Bi络合物，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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3.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates 失效使用Bi羧酸盐制备铁电薄膜的低温CVD工艺公开(公告)号：US06180420B2
公开(公告)日：2001-01-30
申请号：US09208543
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/407 , C23C16/56 , C30B25/02 , C30B29/16 , H01L28/55
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个羧酸酯基的Bi络合物，并且在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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4.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi amides 失效使用Bi酰胺制备铁电薄膜的低温CVD工艺公开(公告)号：US06177135B1
公开(公告)日：2001-01-23
申请号：US09208542
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： C23C1640
CPC分类号： C23C16/40 , C07F9/94 , C23C16/407 , G02F1/0027 , G02F1/0541 , G02F2203/12 , H01L21/31691
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个酰胺基团并在低于450℃的温度下分解和沉积的Bi络合物。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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公开(公告)号：US6133051A
公开(公告)日：2000-10-17
申请号：US107861
申请日：1998-06-30
申请人： Frank S. Hintermaier , Bryan C. Hendrix , Jeffrey F. Roeder , Debra A. Desrochers , Thomas H. Baum
发明人： Frank S. Hintermaier , Bryan C. Hendrix , Jeffrey F. Roeder , Debra A. Desrochers , Thomas H. Baum
IPC分类号： C04B35/495 , C04B35/497 , C04B35/584 , C04B35/622 , C23C16/40 , C23C16/56 , H01L21/314 , H01L21/316 , H01L21/00
CPC分类号： C04B35/18 , C04B35/495 , C04B35/497 , C04B35/58007 , C04B35/58085 , C04B35/58092 , C04B35/584 , C04B35/62222 , C04B35/64 , C23C16/40 , C23C16/408 , C23C16/56 , H01L21/02197 , H01L21/02271 , H01L21/02356 , H01L21/31691 , C04B2235/3251 , C04B2235/3296 , C04B2235/3298 , C04B2235/663 , C04B2235/76
摘要： A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.
摘要翻译： 金属氧化物陶瓷层由非晶膜形成。 金属氧化物陶瓷层包括例如Bi基氧化物陶瓷。将非晶Bi基金属氧化物层退火以将其转变成铁电层。 需要较低的热预算来将无定形的Bi基金属氧化物陶瓷转变成铁电相。
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6.发明授权公开(公告)号：US07005303B2
公开(公告)日：2006-02-28
申请号：US10836550
申请日：2004-04-30
申请人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L21/00
CPC分类号： H01L21/02271 , C23C16/40 , C23C16/56 , H01L21/02197 , H01L21/02205 , H01L21/02356 , H01L21/31691
摘要： A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
摘要翻译： 用于沉积适合于集成以制造铁电存储器件的含铋陶瓷薄膜的低温CVD工艺。 含铋膜可以使用三（β-二酮）铋前体形成。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。
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7.发明授权公开(公告)号：US06730523B2
公开(公告)日：2004-05-04
申请号：US09873138
申请日：2001-06-01
申请人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/56
摘要： A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
摘要翻译： 使用三（β-二酮）铋前体的低温CVD方法，用于沉积适合于制造铁电存储器件的一体化的铋陶瓷薄膜。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。
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8.发明授权Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom 失效金属氧化物陶瓷由于其移动物质的扩散而降低公开(公告)号：US06350643B1
公开(公告)日：2002-02-26
申请号：US09216370
申请日：1998-12-18
申请人： Frank S. Hintermaier , Jeffrey F. Roeder , Bryan C. Hendrix , Debra A. Desrochers , Thomas H. Baum
发明人： Frank S. Hintermaier , Jeffrey F. Roeder , Bryan C. Hendrix , Debra A. Desrochers , Thomas H. Baum
IPC分类号： H01L218242
CPC分类号： C04B35/495 , C04B35/497 , C04B35/62222 , C04B2235/3251 , C04B2235/3296 , C04B2235/76 , C23C16/40 , C23C16/408 , C23C16/56 , H01L21/02197 , H01L21/02271 , H01L21/02356 , H01L21/31691
摘要： Reduced diffusion of excess mobile specie from a metal oxide ceramic is achieved by tailoring the composition an/or deposition parameters. A barrier layer which reacts with the excess mobile specie is provided below the metal oxide ceramic to prevent or reduce the diffusion of the excess mobile specie through the bottom electrode and into the substrate.
摘要翻译： 多余的移动物质从金属氧化物陶瓷的减少的扩散是通过调整组合物/沉积参数来实现的。 在金属氧化物陶瓷的下面设置有与多余的流动物质反应的阻挡层，以防止或减少多余的流动物质通过底部电极并进入衬底中的扩散。
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9.发明授权公开(公告)号：US06303391B1
公开(公告)日：2001-10-16
申请号：US08975087
申请日：1997-11-20
申请人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Christine Dehm , Wolfgang Hoenlein , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , C23C16/56
摘要： A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
摘要翻译： 使用三（β-二酮）铋前体的低温CVD方法，用于沉积适合于制造铁电存储器件的一体化的铋陶瓷薄膜。 可以通过CVD形成非晶态SBT膜，然后用铁退镀以制备具有优异的铁电性能的Aurivillius相组成的膜，适用于制造高密度FRAM。
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公开(公告)号：US06713797B1
公开(公告)日：2004-03-30
申请号：US09197984
申请日：1998-11-23
IPC分类号： H01L2976
CPC分类号： C04B35/18 , C04B35/495 , C04B35/497 , C04B35/58007 , C04B35/58085 , C04B35/58092 , C04B35/584 , C04B35/62222 , C04B35/64 , C04B2235/3251 , C04B2235/3296 , C04B2235/3298 , C04B2235/663 , C04B2235/76 , C23C16/40 , C23C16/408 , C23C16/56 , H01L21/02197 , H01L21/02271 , H01L21/02356 , H01L21/31691
摘要： A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.
摘要翻译： 一种非易失性存储单元，其中电容器包括具有晶体结构的Bi基金属氧化物以产生高可切换极化。
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