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    Silicon charge-handling device employing SiC electrodes
    1.
    发明授权
    Silicon charge-handling device employing SiC electrodes 失效
    采用SiC电极的硅电荷处理装置

    公开(公告)号：US4189826A

    公开(公告)日：1980-02-26

    申请号：US972618

    申请日：1978-12-22

    申请人： Frank T. J. Smith

    发明人： Frank T. J. Smith

    IPC分类号： H01L21/314 ,  H01L21/3205 ,  H01L27/148 ,  H01L29/49 ,  H01L31/0224 ,  B01J17/00

    CPC分类号： H01L27/148 ,  H01L21/314 ,  H01L21/32055 ,  H01L29/4966 ,  H01L31/022466

    摘要： A solid state imaging device is formed of a bulk of monocrystalline silicon which has been suitably doped. A transparent layer of SiO.sub.2 overlays the bulk silicon, and atop the SiO.sub.2 layer is at least one pattern of doped SiC electrodes. Successive patterns of SiC electrodes are insulated from each other by SiO.sub.2. The SiC and SiO.sub.2, being derivatives of silicon, passivate the bulk and serve, respectively, as transparent electrodes and transparent support for such electrodes.

    摘要翻译： 固体成像装置由适当掺杂的大量单晶硅形成。 SiO2的透明层覆盖体硅，SiO 2层顶部是掺杂SiC电极的至少一种图案。 SiC电极的连续图案通过SiO 2彼此绝缘。 作为硅衍生物的SiC和SiO 2分别钝化，并分别作为透明电极和用于这种电极的透明支撑体。

    Processes for their manufacture of monolithically integrated planar lasers differing in emission wavelengths
    2.
    发明授权
    Processes for their manufacture of monolithically integrated planar lasers differing in emission wavelengths 失效
    用于制造发射波长不同的单片集成平面激光器的工艺

    公开(公告)号：US4888085A

    公开(公告)日：1989-12-19

    申请号：US908758

    申请日：1986-09-18

    申请人： Frank T. J. Smith

    发明人： Frank T. J. Smith

    IPC分类号： H01L27/15 ,  H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227 ,  H01S5/40

    CPC分类号： H01S5/4031 ,  H01S5/026 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/4087 ,  Y10S438/956

    摘要： Lasers differing in emission wavelengths are disclosed monolithically integrated in a common substrate providing positive index guiding of adjacent lasers. The lasers and the substrate together present a planar semiconductive surface.The monolithically integrated laser structure is formed by providing laterally offset channels in a planar substrate surface and selectively depositing cladding and active layers in the channels, with the composition of at least one of the cladding and active layers in one channel differing from that in another.

    摘要翻译： 不同发射波长的激光器被公开地集成在共同的衬底中，提供相邻激光器的正折射率引导。 激光器和衬底一起呈现平面半导体表面。 单片集成激光器结构通过在平面衬底表面中提供横向偏移的沟道并且在通道中选择性地沉积包层和有源层而形成，其中一个沟道中的至少一个包层和有源层的组成与另一个沟道中的不同。

    Process for forming a positive index waveguide
    3.
    发明授权
    Process for forming a positive index waveguide 失效
    用于形成正折射率波导的工艺

    公开(公告)号：US4788159A

    公开(公告)日：1988-11-29

    申请号：US908741

    申请日：1986-09-18

    申请人： Frank T. J. Smith

    发明人： Frank T. J. Smith

    IPC分类号： G02B6/13 ,  H01S5/00 ,  H01S5/22 ,  H01S5/227 ,  H01L21/205 ,  H01S3/19

    CPC分类号： H01S5/227 ,  G02B6/131 ,  H01S5/2201 ,  H01S5/2272

    摘要： A process of preparing a laterally confined positive index waveguide is disclosed in which a monocrystalline substrate comprised of a III-V compound is provided having adjacent one major surface monocrystalline gallium aluminum arsenide having a resistivity greater than 10.sup.5 ohm-cm. A protective layer is provided on the substrate, and a channel is opened in the substrate to expose an unprotected portion of the substrate. A waveguide region is formed by selectively depositing epitaxially on only the unprotected portion of the substrate at least one III-V compound of a higher refractive index than the substrate monocrystalline gallium aluminum arsenide. Epitaxial deposition is terminated when the waveguide region forms with the one major surface an overall planar surface, and at least on layer bridging the substrate and the waveguide region is deposited on the planar surface.

    摘要翻译： 公开了一种制备横向限制的正折射率波导的方法，其中提供了由III-V族化合物构成的单晶衬底，其具有电阻率大于105ohm-cm的相邻的一个主表面单晶砷化镓铝。 在基板上设置有保护层，并且在基板中打开通道以暴露基板的未受保护的部分。 通过仅在衬底的未保护部分上外延选择沉积至少一种比衬底单晶砷化镓铝更高的折射率的III-V化合物来形成波导区域。 当波导区域与一个主表面形成整个平坦表面时，外延沉积终止，并且至少在层上桥接基板并且波导区域沉积在平面表面上。

    Processes for the manufacture of laser including monolithically integrated planar devices
    4.
    发明授权
    Processes for the manufacture of laser including monolithically integrated planar devices 失效
    用于制造包括单片集成平面器件的激光器的工艺

    公开(公告)号：US4891093A

    公开(公告)日：1990-01-02

    申请号：US908743

    申请日：1986-09-18

    申请人： Frank T. J. Smith

    发明人： Frank T. J. Smith

    IPC分类号： H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/042 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32

    CPC分类号： H01S5/026 ,  H01S5/227 ,  H01S5/32 ,  H01S5/0205 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/2275

    摘要： Monolithically integrated devices are disclosed in which a laser having a capping layer with a relatively high conductivity imparting ion concentration is laterally offset along a planar surface from a surface layer having a lower conductivity imparting ion concentration.The monolithically integrated laser and surface layer are formed by providing laterally offset channels in a planar substrate surface and selectively epitaxially growing the required laser layers and the surface layer in separate channels.

    摘要翻译： 公开了具有赋予离子浓度较高的导电性的具有覆盖层的激光的激光器沿着具有较低导电性赋予离子浓度的表面层的平坦表面横向偏移。 单片集成激光器和表面层通过在平面衬底表面中提供横向偏移的沟道并且在单独的沟道中选择性地外延生长所需的激光层和表面层而形成。

    Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
    5.
    发明授权
    Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device 失效
    在固态电光装置上制造透明金属氧化物电极结构的方法

    公开(公告)号：US4336295A

    公开(公告)日：1982-06-22

    申请号：US219167

    申请日：1980-12-22

    申请人： Frank T. J. Smith

    发明人： Frank T. J. Smith

    IPC分类号： H01B5/14 ,  H01L21/306 ,  H01L21/339 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/113 ,  C23F1/02

    CPC分类号： H01L29/66954 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/1133 ,  Y10S428/901 ,  Y10T428/24802 ,  Y10T428/24917

    摘要： A method of fabricating an electrode structure of transparent metal oxide on a solid-state electrooptical device is disclosed. A layer of conductive transparent metal oxide is deposited on the surface of the device. Thereafter, the transparent conductive layer is covered with a layer of pattern metal that forms a good electrical contact with the transparent metal oxide and is etchable independently of the transparent metal oxide. Portions of the pattern metal are etched away to define the desired electrode pattern using a photolithographic technique and an etchant that attacks the pattern metal but does not substantially attack the transparent metal oxide layer. Portions of the transparent metal oxide layer not covered by the pattern metal are removed using an etchant that attacks the transparent metal oxide but does not substantially attack the pattern metal. Portions of the remaining pattern metal are removed from imaging areas of the device, leaving pattern metal in the peripheral areas where electrical connections to the electrodes are to be located, using photolithographic techniques and the etchant that attacks the pattern metal but not the transparent metal oxide.In the preferred embodiment, the pattern metal comprises chromium, and to complete the circiut and form bonding pads, a final metallization layer (e.g. gold) is deposited over the structure, and the structure is baked to adhere the final metal to the remaining portions of the chromium. Finally, portions of the final layer of metal are removed leaving the conductor pattern and the bonding pads.

    摘要翻译： 公开了一种在固态电光装置上制造透明金属氧化物的电极结构的方法。 导电透明金属氧化物层沉积在器件的表面上。 此后，透明导电层被图案金属层覆盖，该层与透明金属氧化物形成良好的电接触，并可独立于透明金属氧化物进行蚀刻。 使用光刻技术蚀刻图案金属的部分以蚀刻所需的电极图案，以及侵蚀图案金属但基本不侵蚀透明金属氧化物层的蚀刻剂。 不使用图案金属覆盖的透明金属氧化物层的部分使用侵蚀透明金属氧化物的蚀刻剂除去，但基本上不侵蚀图案金属。 剩余图案金属的部分从器件的成像区域中去除，使用光刻技术和图案金属而不是透明金属氧化物的蚀刻剂将图案金属留在与电极的电连接的外围区域中 。 在优选实施例中，图案金属包括铬，并且为了完成循环并形成焊盘，最后的金属化层（例如金）沉积在结构上，并且将结构烘烤以将最终金属粘附到剩余部分 铬。 最后，除去最后一层金属的部分，留下导体图案和接合垫。

    Transparent electrode light emitting diode and method of manufacture
    8.
    发明授权
    Transparent electrode light emitting diode and method of manufacture 失效
    透明电极发光二极管及其制造方法

    公开(公告)号：US4495514A

    公开(公告)日：1985-01-22

    申请号：US517568

    申请日：1983-07-28

    申请人： David J. Lawrence ,  Daniel C. Abbas ,  Daniel J. Phelps ,  Frank T. J. Smith

    发明人： David J. Lawrence ,  Daniel C. Abbas ,  Daniel J. Phelps ,  Frank T. J. Smith

    IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L27/12 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L33/42 ,  H01L33/0062

    摘要： An efficient light emitting diode is disclosed wherein the spatial distribution of emitted radiation is highly uniform. In accordance with the present invention, a transparent electrode is used to couple current to the light emitting diode junction in a manner that minimizes the resistance at the interface between the transparent electrode and semiconductor diode material. Specifically, it has been found that the interface resistance is significantly reduced, and device efficiency thus increased, by forming a thin metal-based layer at such interface and/or by annealing the transparent electrode after formation on the device.

    摘要翻译： 公开了一种高效发光二极管，其中所发射的辐射的空间分布是高度均匀的。 根据本发明，透明电极用于以最小化透明电极和半导体二极管材料之间的界面处的电阻的方式将电流耦合到发光二极管结。 具体地，已经发现，通过在器件上形成之后，在这种界面处形成薄金属基层和/或退火透明电极，显着地降低了界面电阻，从而提高了器件效率。