摘要:
Systems and methods for reducing the effect of noise while reading data in series from memory, are provided. One system embodiment comprises a memory cell that stores a first data; a sensing device that receives the first data multiple times and provides a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment comprises reading data in series that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.
摘要:
A magnetoresistive solid-state storage device (MRAM) employs error correction coding (ECC) to form ECC encoded stored data. In a read operation, parametric values are obtained from storage cells 16 of the device and compared to ranges to establish logical bit values, together with erasure information. The erasure information identifies symbols 206 in a block of ECC encoded data 204 which, from the parametric evaluation, are suspected to be affected by physical failures of the storage cells 16. Where the position of suspected failed symbols 206 is known from this erasure information, the ability of a decoder 22 to perform ECC decoding is substantially enhanced.
摘要:
Systems and methods for reducing the effect of noise while reading data from memory, are provided. One system embodiment includes a memory cell that stores a first data; multiple sensing devices that receive the first data and provide a first set of outputs; and a voting system that evaluates the first set of outputs to determine whether one of the outputs of the first set is valid data from the memory cell. One method embodiment includes reading data in parallel that is stored in a memory cell to provide outputs; and evaluating the outputs to determine whether one of the outputs is valid data from the memory cell.
摘要:
A reference circuit is provided which generates a reference voltage which is always at least as high as a stable reference value. This is done by generating a lock signal which is maintained at a first logic level during start-up of the reference circuit and then attains a second logic level when the reference value has stabilized. The reference circuit can be a bandgap reference circuit.
摘要:
A redundancy implementation circuit has a set of memory cells each storing an address bit of an address identifying a redundant memory location and a set of comparator circuits each connected to compare the address bit stored in a memory cell with an incoming address bit. A switch selectively connects the output of the memory cell to a redundant address line supplying the incoming address bit during a test mode. A redundant address line driver is activated for supplying an incoming address bit onto the redundant address line in a normal mode, and a test line output driver is connected to the redundant address line in a test mode for utilising the redundant address line to supply test signals onto a test path.
摘要:
Methods and apparatuses are disclosed for measuring values of a plurality of memory elements, where the measured values may be indicative of the digital state of a memory element. Calculations may be performed on a plurality of transition-terms associated with the possible transitions in the values between proximate memory elements. The digital state of memory elements may be determined using the calculations performed on the plurality of transition-terms.
摘要:
A magnetic random access memory array includes a data storage layer having an easy axis. A non-linear first conductor is positioned on a first side of the data storage layer, wherein a portion of the first conductor has an angle of orientation that is perpendicular to the easy axis. A non-linear second conductor is positioned on a second side of the data storage layer, wherein a portion of the second conductor also has an angle of orientation that is perpendicular to the easy axis.
摘要:
A current generator provides a substantially constant current. The current generator is based on a bandgap circuit and additionally include a current setting device which is located to receive the output signal of the operational amplifier of the bandgap circuit and which is arranged to provide a substantially constant reference current. The circuit is used to particular advantage in a flash memory device.
摘要:
A memory comprises first and second arrays of memory cells organised in rows and column. The cells in each row are connected to respective wordlines and the cells in each column are connected to a respective bit line. Wordlines of the first array are addressable independently of the wordlines of the second array. A sense amplifier is provided to sense the differential between a signal on the bit line of a selected cell in one array and a reference signal. A current souce is selectively connectable to supply the reference signal for comparison with the signal on the bit line of the addressed array. The present invention allows capacitive balancing to be achieved without the need for dummy cells.