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公开(公告)号：US06101298A
公开(公告)日：2000-08-08
申请号：US37892
申请日：1998-03-10
申请人： Friedrich J. A. Den Broeder , Ralph M. N. Hanzen , Peter A. Duine , Reiner M. Jungblut , Cornelis Draijer , Freddy Roozeboom , Paul Van Der Sluis
发明人： Friedrich J. A. Den Broeder , Ralph M. N. Hanzen , Peter A. Duine , Reiner M. Jungblut , Cornelis Draijer , Freddy Roozeboom , Paul Van Der Sluis
CPC分类号： G02F1/17 , G02F1/1523 , G02F1/0147 , G02F2202/34
摘要： A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through the switching film (5) can be switched on and off between the terminals (9, 11). Joule heating of the switching film (5) causes a rapid transition from the transparent trihydride state to the absorbing dihydride state. By switching off the current, the switching film (5) cools down, which results in the formation of the absorbing dihydride state. The conversion between both states is reversible and can be repeated many times. The device can be used for controlling light beams, or it can be used in or for a display. Optionally, cooling of the switching film (5) is obtained with a Peltier element in thermal contact with the switching film (5).
摘要翻译： 说明了包括透明基板（3），厚度为300nm的三价过渡金属或稀土金属的氢化物化合物的开关膜（5）和钯封盖层（1）的光开关装置（1） （7），厚度为30nm。 封盖层与氢接触。 可以在端子（9,11）之间接通和断开通过开关薄膜（5）的电流。 开关膜（5）的焦耳加热导致从透明三氢化物状态到吸收二氢化态的快速转变。 通过切断电流，开关膜（5）冷却，这导致形成吸收二氢化物状态。 两种状态之间的转换是可逆的，可重复多次。 该装置可用于控制光束，或者可以用于显示器或用于显示器。 可选地，通过与开关膜（5）热接触的珀耳贴元件来获得开关薄膜（5）的冷却。
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公开(公告)号：US06173116B2
公开(公告)日：2001-01-09
申请号：US09506543
申请日：2000-02-17
IPC分类号： A21B200
CPC分类号： H01L21/67115 , C30B25/105 , C30B31/12 , G02F2202/34
摘要： A Method (1) for Rapid Thermal Processing of a wafer (7), wherein the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device includes a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.
摘要翻译： 一种用于晶片（7）的快速热处理的方法（1），其中所述晶片（7）被灯（9）加热，并且所述热辐射由位于所述晶片（7）中的光学开关器件（15,17）反射 在加热阶段反映状态。 在晶片（7）的冷却阶段期间，热量被处于吸热状态的开关装置（15,17）吸收。 开关装置包括能够通过氢气交换形成氢化物的三价金属如钆的转换膜。 取决于氢化物的氢浓度，膜反射或吸收热量。 可以通过改变氢的分压来改变开关膜中的氢含量，或者优选地，通过改变在电化学电池中形成层叠层的一部分的切换膜的电位来改变开关膜中的氢含量。
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3.发明授权Furnace for rapid thermal processing with optical switching film disposed between heater and reflector 失效用于快速热处理的炉，其具有设置在加热器和反射器之间的光学切换膜
公开(公告)号：US6047107A
公开(公告)日：2000-04-04
申请号：US994153
申请日：1997-12-19
IPC分类号： H01L21/26 , F27B17/00 , F27D11/02 , G02F1/15 , G02F3/02 , H01L21/00 , H01L21/324 , H03K17/78
CPC分类号： H01L21/67115
摘要： A furnace (1) for Rapid Thermal Processing of a wafer (7), characterized in that the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is absorbed by the switching device (15,17), which is in the heat-absorbing state. The switching device comprises a switching film of a trivalent metal, such as gadolinium, which is capable of forming hydrides by an exchange of hydrogen. Dependent on the hydrogen concentration of the hydrides, the film reflects or absorbs heat. The hydrogen content in the switching film can be changed by varying the partial pressure of hydrogen, or, preferably, by varying the potential of the switching film forming part of a stack of layers in an electrochemical cell.
摘要翻译： 一种用于晶片（7）的快速热处理的炉（1），其特征在于，所述晶片（7）被灯（9）加热，并且所述散热由光开关装置（15,17）反射，所述光开关装置 处于加热阶段的反射状态。 在晶片（7）的冷却阶段期间，热量被处于吸热状态的开关装置（15,17）吸收。 开关装置包括能够通过氢交换形成氢化物的三价金属如钆的开关膜。 取决于氢化物的氢浓度，膜反射或吸收热量。 可以通过改变氢的分压来改变开关膜中的氢含量，或者优选地，通过改变在电化学电池中形成层叠层的一部分的切换膜的电位来改变开关膜中的氢含量。
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公开(公告)号：US07192533B2
公开(公告)日：2007-03-20
申请号：US10509564
申请日：2003-03-23
申请人： Erik Petrus Antonius Maria Bakkers , Freddy Roozeboom , Johannes Fransiscus Cornelis Maria Verhoeven , Paul Van Der Sluis
发明人： Erik Petrus Antonius Maria Bakkers , Freddy Roozeboom , Johannes Fransiscus Cornelis Maria Verhoeven , Paul Van Der Sluis
IPC分类号： C03C25/68
CPC分类号： B82Y10/00 , H01L21/30604 , H01L21/30608 , H01L21/30617 , H01L21/30621 , H01L21/3063 , H01L21/3065 , H01L21/3083 , H01L29/0673 , H01L29/0676 , H01L29/125
摘要： In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are different. They may be different in the doping type. Alternatively, the main constituent of the material may be different, for example SiGe or SiC versus Si, or InP versus InAs. In the resulting nanowires, the interface is atomically sharp. The electronic devices having nanowires between a first and second electrode accordingly have very good electroluminescent and optoelectronic properties.
摘要翻译： 在该方法中，蚀刻半导体衬底以提供纳米线，所述衬底包括第一材料的第一层和具有相互界面的第二材料的第二层，该第一和第二材料是不同的。 它们在掺杂类型中可能不同。 或者，材料的主要成分可以是不同的，例如SiGe或SiC相对于Si，或InP对InAs。 在所得的纳米线中，界面是原子锋利的。 因此，在第一和第二电极之间具有纳米线的电子器件具有非常好的电致发光和光电子性质。
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公开(公告)号：US20050236357A1
公开(公告)日：2005-10-27
申请号：US10509564
申请日：2003-03-23
申请人： Erik Petrus Antonius Bakkers , Freddy Roozeboom , Johannes Fransiscus Verhoeven , Paul Van Der Sluis
发明人： Erik Petrus Antonius Bakkers , Freddy Roozeboom , Johannes Fransiscus Verhoeven , Paul Van Der Sluis
IPC分类号： B82B3/00 , H01L21/306 , H01L21/3063 , H01L21/3065 , H01L21/308 , H01L29/06 , H01L29/12 , H01L29/786 , B44C1/22
CPC分类号： B82Y10/00 , H01L21/30604 , H01L21/30608 , H01L21/30617 , H01L21/30621 , H01L21/3063 , H01L21/3065 , H01L21/3083 , H01L29/0673 , H01L29/0676 , H01L29/125
摘要： In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are different. They may be different in the doping type. Alternatively, the main constituent of the material may be different, for example SiGe or SiC versus Si, or InP versus InAs. In the resulting nanowires, the interface is atomically sharp. The electronic devices having nanowires between a first and second electrode accordingly have very good electroluminescent and optoelectronic properties.
摘要翻译： 在该方法中，蚀刻半导体衬底以提供纳米线，所述衬底包括第一材料的第一层和具有相互界面的第二材料的第二层，该第一和第二材料是不同的。 它们在掺杂类型中可能不同。 或者，材料的主要成分可以是不同的，例如SiGe或SiC相对于Si，或InP对InAs。 在所得的纳米线中，界面是原子锋利的。 因此，在第一和第二电极之间具有纳米线的电子器件具有非常好的电致发光和光电子性质。
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公开(公告)号：US09297077B2
公开(公告)日：2016-03-29
申请号：US13577922
申请日：2011-02-11
IPC分类号： C23C16/455 , C23C16/458 , C23C16/54 , H01L21/677
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。
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公开(公告)号：US20130064977A1
公开(公告)日：2013-03-14
申请号：US13577922
申请日：2011-02-11
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。
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公开(公告)号：US20100003827A1
公开(公告)日：2010-01-07
申请号：US12373394
申请日：2007-07-12
申请人： Wilhelmus Mathijs Marie Kessels , Mauritius Cornelis Van De Sanden , Michiel Alexander Blauw , Freddy Roozeboom
发明人： Wilhelmus Mathijs Marie Kessels , Mauritius Cornelis Van De Sanden , Michiel Alexander Blauw , Freddy Roozeboom
IPC分类号： H01L21/3065 , B44C1/22
CPC分类号： H01J37/32357 , C23C16/402 , C23C16/513 , H01J37/32055 , H01J2237/2001 , H01J2237/3343 , H01L21/30655
摘要： In a method and device for etching a substrate by a plasma, the plasma is generated and accelerated at substantially sub-atmospheric pressure between a cathode and an anode of a plasma source (1) in a channel of system of at least one conductive cascaded plate between the cathode and anode. The plasma is released from the plasma source to a treatment chamber (2) in which the substrate (9) is exposed to the plasma. The treatment chamber is sustained at a reduced, near vacuum pressure during operation. An alternating bias voltage is applied between the substrate and the plasma during the exposure
摘要翻译： 在用于通过等离子体蚀刻衬底的方法和装置中，在至少一个导电级联板的系统的通道中的等离子体源（1）的阴极和阳极之间的基本上亚大气压下产生等离子体并加速 在阴极和阳极之间。 等离子体从等离子体源释放到其中衬底（9）暴露于等离子体的处理室（2）中。 处理室在操作期间维持在减小的接近真空压力。 在曝光期间，在衬底和等离子体之间施加交替的偏置电压
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9.发明申请Method Of Manufacturing An Electrochemical Energy Source,Electrochemical Energy Source Thus Obtained And Electronic Device 审中-公开制造电化学能源的方法，电化学能源如此获得和电子设备公开(公告)号：US20080148555A1
公开(公告)日：2008-06-26
申请号：US11816759
申请日：2006-02-17
申请人： Freddy Roozeboom , Peter Notten
发明人： Freddy Roozeboom , Peter Notten
IPC分类号： H01M6/00
CPC分类号： H01M6/40 , H01M2/10 , H01M2/1022 , H01M4/60 , H01M10/052 , H01M10/0562 , Y10T29/49108
摘要： The invention relates to a method of manufacturing an electrochemical energy source comprising the steps of providing a first electrode that is at least partially formed by a conducting substrate, depositing a lithium ion solid-state electrolyte on the substrate; and depositing a second electrode on the substrate. The lithium ion solid-state electrolyte layer is obtained from a dual metal lithium alkoxide precursor Further an electrochemical energy source is disclosed as well as an electronic device provided with such an electrochemical energy source.
摘要翻译： 本发明涉及一种制造电化学能源的方法，包括以下步骤：提供至少部分地由导电衬底形成的第一电极，在衬底上沉积锂离子固态电解质; 以及在所述衬底上沉积第二电极。 锂离子固态电解质层由双金属锂醇盐前体获得。此外，还公开了电化学能源以及具有这种电化学能源的电子器件。
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10.发明申请公开(公告)号：US20080095491A1
公开(公告)日：2008-04-24
申请号：US10588836
申请日：2005-02-11
IPC分类号： G02B6/12
CPC分类号： G02B6/43 , B82Y20/00 , G02B6/1225 , H01L31/153
摘要： A monolithically integrated optical network device (20). The device comprises: a bipolar transistor (10) realized in a silicon substrate (11) that can be biased into an avalanche condition to emit photons; and a photonic bandgap (PBG) structure (22) monolithically integrated with the bipolar transistor (10) to act as an optical wave guide (16) for the photons generated by the bipolar transistor (10).
摘要翻译： 单片集成光网络装置（20）。 该器件包括：在硅衬底（11）中实现的双极晶体管（10），其可被偏置到雪崩状态以发射光子; 以及与双极晶体管（10）单片集成的光子带隙（PBG）结构（22），用作由双极晶体管（10）产生的光子的光波导（16）。
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