公开(公告)号：US20230203343A1

公开(公告)日：2023-06-29

申请号：US17880758

申请日：2022-08-04

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC分类号： C09G1/02 ,  H01L21/3212 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253904A1

公开(公告)日：2021-08-19

申请号：US17169685

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  B24B37/04

摘要： A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253903A1

公开(公告)日：2021-08-19

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  C09K15/30 ,  H01L21/321

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20240327675A1

公开(公告)日：2024-10-03

申请号：US18616347

申请日：2024-03-26

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Hanyu Fan ,  Bin Hu ,  Yannan Liang ,  Ting-Kai Huang ,  Eric Turner

IPC分类号： C09G1/02

CPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes an abrasive; at least one Si-containing compound including an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the polishing composition to polish a substrate.

公开(公告)号：US20230135325A1

公开(公告)日：2023-05-04

申请号：US17970667

申请日：2022-10-21

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Yannan Liang ,  Bin Hu ,  Abhudaya Mishra ,  Ting-Kai Huang ,  Yibin Zhang ,  James Johnston ,  James McDonough

IPC分类号： C09G1/02 ,  H01L21/306

摘要： A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US11414568B2

公开(公告)日：2022-08-16

申请号：US17169676

申请日：2021-02-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US11279850B2

公开(公告)日：2022-03-22

申请号：US16299935

申请日：2019-03-12

申请人： FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

发明人： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC分类号： C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

摘要： The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20240174892A1

公开(公告)日：2024-05-30

申请号：US18515857

申请日：2023-11-21

申请人： Fujifilm Electronic Materials U.S.A. Inc.

发明人： Ting-Kai Huang ,  Yannan Liang ,  Bin Hu ,  Chun-Fu Chen ,  Ying-Shen Chuang ,  Tzu-Wei Chiu ,  Sung TsaiLin ,  Hanyu Fan ,  Hsin-Hsien Lu

IPC分类号： C09G1/02

CPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

公开(公告)号：US11851585B2

公开(公告)日：2023-12-26

申请号：US17880758

申请日：2022-08-04

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC分类号： C09G1/02 ,  C09K15/30 ,  H01L21/3212

摘要： A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20230052829A1

公开(公告)日：2023-02-16

申请号：US17875458

申请日：2022-07-28

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： Ting-Kai Huang ,  Bin Hu ,  Yannan Liang ,  Hong Piao

IPC分类号： C09G1/04 ,  H01L21/321

摘要： This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.