公开(公告)号：US20080219054A1

公开(公告)日：2008-09-11

申请号：US12039461

申请日：2008-02-28

申请人： Fumitaka ARAI ,  Masaru Kito ,  Mitsuru Sato

发明人： Fumitaka ARAI ,  Masaru Kito ,  Mitsuru Sato

IPC分类号： G11C11/34

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor memory device includes a plurality of active areas each extending in a first direction and including a memory cell string which includes select transistors and memory cells, current paths of which are connected in series, a first extension portion which is provided between one-side terminal end portions of two active areas neighboring in a second direction that crosses the first direction, and a second extension portion which is provided between other-side terminal end portions of the two active areas neighboring in the second direction, the first and second extension portions connecting the two active areas in a loop configuration.

摘要翻译： 半导体存储器件包括多个有源区，每个有源区各自沿第一方向延伸，并且包括存储单元串，该存储单元串包括选择晶体管和存储单元，其电流通路串联连接，第一延伸部分设置在一侧 在与第一方向相反的第二方向上相邻的两个有效区域的末端部分和设置在与第二方向相邻的两个有效区域的另一侧终端部分之间的第二延伸部分，第一和第二延伸部分 以循环配置连接两个活动区域。

公开(公告)号：US07813203B2

公开(公告)日：2010-10-12

申请号：US12039461

申请日：2008-02-28

申请人： Fumitaka Arai ,  Masaru Kito ,  Mitsuru Sato

发明人： Fumitaka Arai ,  Masaru Kito ,  Mitsuru Sato

IPC分类号： G11C7/02

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor memory device includes a plurality of active areas each extending in a first direction and including a memory cell string which includes select transistors and memory cells, current paths of which are connected in series, a first extension portion which is provided between one-side terminal end portions of two active areas neighboring in a second direction that crosses the first direction, and a second extension portion which is provided between other-side terminal end portions of the two active areas neighboring in the second direction, the first and second extension portions connecting the two active areas in a loop configuration.

摘要翻译： 半导体存储器件包括多个有源区，每个有源区各自沿第一方向延伸，并且包括存储单元串，该存储单元串包括选择晶体管和存储单元，其电流通路串联连接，第一延伸部分设置在一侧 在与第一方向相反的第二方向上相邻的两个有效区域的末端部分和设置在与第二方向相邻的两个有效区域的另一侧终端部分之间的第二延伸部分，第一和第二延伸部分 以循环配置连接两个活动区域。

公开(公告)号：US08659070B2

公开(公告)日：2014-02-25

申请号：US12561451

申请日：2009-09-17

申请人： Hiroyasu Tanaka ,  Ryota Katsumata ,  Hideaki Aochi ,  Masaru Kido ,  Masaru Kito ,  Mitsuru Sato

发明人： Hiroyasu Tanaka ,  Ryota Katsumata ,  Hideaki Aochi ,  Masaru Kido ,  Masaru Kito ,  Mitsuru Sato

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7881 ,  H01L29/7926

摘要： The semiconductor memory device of the present invention includes a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, the memory strings having a column shaped semiconductor, a first insulation film formed around the column shaped semiconductor, a charge accumulation layer formed around the first insulation film, a second insulation film formed around the charge accumulation film and a plurality of electrodes formed around the second insulation film, a bit line connected to one end of the memory strings via a plurality of selection transistors, and a conducting layer extending in two dimensions and in which the plurality of electrodes of the memory strings and the plurality of electrodes of different memory strings are shared respectively, wherein each end part of the conducting layer is formed in step shapes in a direction parallel with the bit line.

摘要翻译： 本发明的半导体存储器件包括具有串联连接的多个电可再编程存储器单元的多个存储器串，具有列形半导体的存储器串，形成在柱状半导体周围的第一绝缘膜，电荷累积层 形成在第一绝缘膜周围，形成在电荷累积膜周围的第二绝缘膜和围绕第二绝缘膜形成的多个电极，经由多个选择晶体管连接到存储器串的一端的位线，以及导电 分别在存储器串的多个电极和不同的存储器串的多个电极中分别共享，其中导电层的每个端部在平行于位线的方向上形成为台阶形状 。

公开(公告)号：US08253187B2

公开(公告)日：2012-08-28

申请号：US12142289

申请日：2008-06-19

申请人： Hiroyasu Tanaka ,  Ryota Katsumata ,  Masaru Kito ,  Yoshiaki Fukuzumi ,  Masaru Kido ,  Hideaki Aochi ,  Mitsuru Sato ,  Yasuyuki Matsuoka

发明人： Hiroyasu Tanaka ,  Ryota Katsumata ,  Masaru Kito ,  Yoshiaki Fukuzumi ,  Masaru Kido ,  Hideaki Aochi ,  Mitsuru Sato ,  Yasuyuki Matsuoka

IPC分类号： H01L27/115

CPC分类号： H01L27/115 ,  H01L27/11556

摘要： A non-volatile semiconductor storage device 10 has a plurality of memory strings 100 with a plurality of electrically rewritable memory transistors MTr1-MTr4 connected in series. The memory string 100 includes a columnar semiconductor CLmn extending in a direction perpendicular to a substrate, a plurality of charge accumulation layers formed around the columnar semiconductor CLmn via insulating films, and selection gate lines on the drain side SGD contacting the columnar semiconductor to configure transistors. The selection gate lines on the drain side SGD have lower selection gate lines on the drain side SGDd, each of which is arranged with an interval with a certain pitch, and upper selection gate lines on the drain side SGDu located on a higher layer than the lower selection gate lines on the drain side SGDd, each of which is arranged on gaps between the lower selection gate lines on the drain side SGDd.

摘要翻译： 非易失性半导体存储装置10具有多个串联连接的多个电可重写存储晶体管MTr1-MTr4的存储器串100。 存储器串100包括沿垂直于衬底的方向延伸的柱状半导体CLmn，经由绝缘膜形成在柱状半导体CLmn周围的多个电荷累积层，以及与柱状半导体接触的漏极侧SGD上的选择栅极线，以配置晶体管 。 漏极侧SGD上的选择栅极线在漏极侧SGDd上具有较低的选择栅极线，每个栅极配置有一定间距的间隔，漏极侧SGDu上的选择栅极线位于高于 漏极侧SGDd上的下部选择栅极线设置在漏极侧SGDd的下部选择栅极线之间的间隙。

公开(公告)号：US07936004B2

公开(公告)日：2011-05-03

申请号：US11654551

申请日：2007-01-18

申请人： Masaru Kito ,  Hideaki Aochi ,  Ryota Katsumata ,  Akihiro Nitayama ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yoshiaki Fukuzumi ,  Yasuyuki Matsuoka ,  Mitsuru Sato

发明人： Masaru Kito ,  Hideaki Aochi ,  Ryota Katsumata ,  Akihiro Nitayama ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yoshiaki Fukuzumi ,  Yasuyuki Matsuoka ,  Mitsuru Sato

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  G11C16/0483 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578

摘要： A nonvolatile semiconductor memory device includes a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; a second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory string and the first to nth electrodes of at least two other memory strings which are adjacent to the memory string in two directions are shared as first to nth conductor layers spread in two dimensions.

摘要翻译： 非易失性半导体存储器件包括其中多个可电可编程存储器单元串联连接的多个存储器串。 存储器串包括柱形半导体; 形成在柱状半导体周围的第一绝缘膜; 形成在所述第一绝缘膜周围的电荷存储层; 形成在电荷存储层周围的第二绝缘膜; 并且形成在第二绝缘膜周围的第一或第n电极（n是大于1的自然数）。 存储器串的第一或第n电极以及在两个方向上与存储器串相邻的至少两个其它存储器串的第一至第n电极被共享为在二维上扩展的第一至第n导体层。

公开(公告)号：US07838996B2

公开(公告)日：2010-11-23

申请号：US11826709

申请日：2007-07-18

申请人： Mitsuru Sato ,  Masaru Kito ,  Yuzo Nagata

发明人： Mitsuru Sato ,  Masaru Kito ,  Yuzo Nagata

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/0337 ,  H01L21/32139 ,  H01L27/0203 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11565 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a wiring layer. The wiring layer is provided by forming a sidewall film having a closed-loop along a sidewall of a hard mask, etching off the hard mask to leave the sidewall film, and then etching a target material to be etched with a mask of the sidewall film. The wiring layer includes a folded wiring section formed along an end of the hard mask, and a parallel section composed of two parallel wires continued from the folded wiring section. The wiring layer has a closed-loop cut made in a portion except for the folded wiring section and the parallel section. The folded wiring section and the parallel section are used as a contact region for connection to another wire.

摘要翻译： 半导体器件包括布线层。 布线层通过沿着硬掩模的侧壁形成具有闭环的侧壁膜，蚀刻出硬掩模以离开侧壁膜，然后用侧壁膜的掩模蚀刻待蚀刻的目标材料来提供 。 布线层包括沿着硬掩模的端部形成的折叠布线部分和由折叠的布线部分连续的两条平行的线构成的平行部分。 布线层具有除了折叠布线部分和平行部分之外的部分中的闭环切割。 折叠的布线部分和平行部分用作用于连接到另一导线的接触区域。

公开(公告)号：US07539056B2

公开(公告)日：2009-05-26

申请号：US11896261

申请日：2007-08-30

申请人： Ryota Katsumata ,  Masaru Kito ,  Hideaki Aochi ,  Hiroyasu Tanaka ,  Masaru Kidoh ,  Mitsuru Sato

发明人： Ryota Katsumata ,  Masaru Kito ,  Hideaki Aochi ,  Hiroyasu Tanaka ,  Masaru Kidoh ,  Mitsuru Sato

IPC分类号： G11C16/04

CPC分类号： G11C16/24 ,  G11C16/0483 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529

摘要： In a NAND type flash memory, control electrodes of first select transistors in a plurality memory cell units extending along a data line is integrated to constitute a first select signal line while control electrodes of second select transistor are integrated to constitute a second select signal line. The second select signal line is displaced from the first select signal line by a half pitch.

摘要翻译： 在NAND型闪速存储器中，集成了沿着数据线延伸的多个存储单元单元中的第一选择晶体管的控制电极，以构成第一选择信号线，同时第二选择晶体管的控制电极被积分以构成第二选择信号线 。 第二选择信号线从第一选择信号线移位半个间距。

公开(公告)号：US20070252201A1

公开(公告)日：2007-11-01

申请号：US11654551

申请日：2007-01-18

申请人： Masaru Kito ,  Hideaki Aochi ,  Ryota Katsumata ,  Akihiro Nitayama ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yoshiaki Fukuzumi ,  Yasuyuki Matsuoka ,  Mitsuru Sato

发明人： Masaru Kito ,  Hideaki Aochi ,  Ryota Katsumata ,  Akihiro Nitayama ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yoshiaki Fukuzumi ,  Yasuyuki Matsuoka ,  Mitsuru Sato

IPC分类号： H01L29/76

CPC分类号： H01L27/11582 ,  G11C16/0483 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578

摘要： A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state.

摘要翻译： 提供了具有新结构的非易失性半导体存储器件，其中以三维状态层叠存储单元，从而可以减小芯片面积。 本发明的非易失性半导体存储装置是具有串联连接有多个电可编程存储单元的多个存储串的非易失性半导体存储装置。 存储器串包括柱形半导体; 形成在柱状半导体周围的第一绝缘膜; 形成在所述第一绝缘膜周围的电荷存储层; 形成在电荷存储层周围的第二绝缘膜; 并且形成在第二绝缘膜周围的第一或第n电极（n是大于1的自然数）。 存储器串的第一或第n电极和存储器串的其它第一或第n电极分别是以二维状态扩展的第一或第n导体层。

公开(公告)号：US08786008B2

公开(公告)日：2014-07-22

申请号：US13420745

申请日：2012-03-15

申请人： Megumi Ishiduki ,  Masaru Kidoh ,  Mitsuru Sato ,  Masaru Kito ,  Ryota Katsumata

发明人： Megumi Ishiduki ,  Masaru Kidoh ,  Mitsuru Sato ,  Masaru Kito ,  Ryota Katsumata

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/7926 ,  H01L21/28282 ,  H01L27/11582 ,  H01L29/42344

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body; a memory film; a first channel body layer provided inside the memory film; an interlayer insulating film provided on the first stacked body; a second stacked body having a select gate electrode layer, and a second insulating layer; a gate insulating film provided on a side wall of a second hole communicating with the first hole and penetrating the second stacked body and the interlayer insulating film in a stacking direction of the second stacked body; and a second channel body layer provided inside the gate insulating film in the second hole. A first pore diameter of the second hole at an upper end of the select gate electrode layer is smaller than a second pore diameter of the second hole at an lower end of the select gate electrode layer.

摘要翻译： 根据一个实施例，一种非易失性半导体存储器件包括：第一层叠体; 记忆膜; 设置在记忆膜内部的第一通道体层; 设置在所述第一层叠体上的层间绝缘膜; 具有选择栅电极层的第二层叠体和第二绝缘层; 栅极绝缘膜，设置在与所述第一孔连通的第二孔的侧壁上，并且在所述第二层叠体的层叠方向上贯通所述第二层叠体和所述层间绝缘膜; 以及设置在第二孔中的栅极绝缘膜内部的第二沟道体层。 选择栅电极层的上端的第二孔的第一孔径比选择栅电极层的下端的第二孔的第二孔径小。

公开(公告)号：US08363481B2

公开(公告)日：2013-01-29

申请号：US12521997

申请日：2008-01-31

申请人： Masaru Kidoh ,  Hiroyasu Tanaka ,  Masaru Kito ,  Ryota Katsumata ,  Hideaki Aochi ,  Mitsuru Sato

发明人： Masaru Kidoh ,  Hiroyasu Tanaka ,  Masaru Kito ,  Ryota Katsumata ,  Hideaki Aochi ,  Mitsuru Sato

IPC分类号： G11C16/06

CPC分类号： H01L27/11578 ,  G11C16/0483 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11575 ,  H01L27/11582

摘要： A non-volatile semiconductor memory device according to the present invention includes a substrate; a first word-line provided above the substrate surface, the first word-line having a plate shape in an area where a memory cell is formed; a second word-line provided above the first word-line surface, the second word-line having a plate shape; a plurality of metal wirings connecting the first and second word-lines with a driver circuit; and a plurality of contacts connecting the first and second word-lines with the metal wirings. The contact of the first word-line is formed in a first word-line contact area. The contact of the second word-line is formed in a second word-line contact area. The first word-line contact area is provided on a surface of the first word-line that is drawn to the second word-line contact area.

摘要翻译： 根据本发明的非易失性半导体存储器件包括：衬底; 设置在所述衬底表面上方的第一字线，所述第一字线在形成存储器单元的区域中具有板形; 设置在所述第一字线表面上方的第二字线，所述第二字线具有板形; 将第一和第二字线与驱动电路连接的多个金属布线; 以及将第一和第二字线与金属布线连接的多个触点。 第一字线的接触形成在第一字线接触区域中。 第二字线的接触形成在第二字线接触区域中。 第一字线接触区域被提供在第一字线的被拉到第二字线接触区域的表面上。