公开(公告)号：US20130009284A1

公开(公告)日：2013-01-10

申请号：US13618699

申请日：2012-09-14

申请人： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

发明人： Yoshimaro FUJII ,  Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA

IPC分类号： H01L23/544

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20120279947A1

公开(公告)日：2012-11-08

申请号：US13529525

申请日：2012-06-21

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area.

摘要翻译： 一种激光束加工方法和能够沿着工件表面上的预定切割线切割工件的激光束加工装置，其中脉冲激光束照射在工件表面上的预定切割线上，导致多个光子 通过设置在工件内部的凝聚点的吸收，并且沿着预定的切割线沿着预定的确定的切割线在工件内部形成改变区域，通过沿着预定的切割线移动凝结点，由此可以通过破裂工件以小的力来切割工件 沿着从修改区域开始的预定切割线。

公开(公告)号：US20110027972A1

公开(公告)日：2011-02-03

申请号：US12900754

申请日：2010-10-08

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： H01L21/78 ,  B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US20110027971A1

公开(公告)日：2011-02-03

申请号：US12906534

申请日：2010-10-18

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： H01L21/268 ,  B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US20120329248A1

公开(公告)日：2012-12-27

申请号：US13608676

申请日：2012-09-10

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/78

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20120077315A1

公开(公告)日：2012-03-29

申请号：US13269274

申请日：2011-10-07

申请人： Kenshi FUKUMITSU ,  Fumitsugu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

发明人： Kenshi FUKUMITSU ,  Fumitsugu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

IPC分类号： H01L21/50

CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

摘要翻译： 用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位晶片内的聚光点，从而产生多光子吸收，从而形成 一个起始点区域，用于沿着一条线在晶片内熔融的处理区域进行切割。 因此，可以从用于自然切割的起点区域或以相对小的力产生断裂，从而到达前表面和后表面。 因此，在形成切割起点区域之后，通过芯片接合树脂层将膨胀膜附着到晶片的背面，然后扩大时，可以沿着线切割晶片和芯片接合树脂层。

公开(公告)号：US20120190175A1

公开(公告)日：2012-07-26

申请号：US13432949

申请日：2012-03-28

申请人： Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA ,  Toshimitsu WAKUDA

发明人： Fumitsugu FUKUYO ,  Kenshi FUKUMITSU ,  Naoki UCHIYAMA ,  Toshimitsu WAKUDA

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US20110021004A1

公开(公告)日：2011-01-27

申请号：US12896296

申请日：2010-10-01

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： H01L21/302 ,  B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US20120205358A1

公开(公告)日：2012-08-16

申请号：US13451988

申请日：2012-04-20

申请人： Fumitsugu FUKUYO ,  Kenshi FUKUMITSU

发明人： Fumitsugu FUKUYO ,  Kenshi FUKUMITSU

IPC分类号： B23K26/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  C03B33/0222 ,  C03B33/033 ,  C03B33/07 ,  C03B33/074 ,  H01L2924/01015

摘要： A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

摘要翻译： 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体，从而由于在物体1内由于多光子吸收而形成改质区域7，并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域，沿着被切割物体的线。 随后，物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂，从而沿着物体应该被切割的线路精确地切割物体1。

公开(公告)号：US20100015783A1

公开(公告)日：2010-01-21

申请号：US12570380

申请日：2009-09-30

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu

IPC分类号： H01L21/304 ,  B23K26/38

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011 ,  C03B33/0222 ,  C03B33/033 ,  C03B33/07 ,  C03B33/074 ,  H01L2924/01015

摘要： A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

摘要翻译： 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体，从而由于在物体1内由于多光子吸收而形成改质区域7，并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域，沿着被切割物体的线。 随后，物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂，从而沿着物体应该被切割的线路精确地切割物体1。