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    SEMICONDUCTOR SUBSTRATE CUTTING METHOD
    2.
    发明申请
    SEMICONDUCTOR SUBSTRATE CUTTING METHOD 有权
    半导体基板切割方法

    公开(公告)号：US20120077315A1

    公开(公告)日：2012-03-29

    申请号：US13269274

    申请日：2011-10-07

    申请人： Kenshi FUKUMITSU ,  Fumitsugu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

    发明人： Kenshi FUKUMITSU ,  Fumitsugu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

    IPC分类号： H01L21/50

    CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

    摘要： A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

    摘要翻译： 用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位晶片内的聚光点，从而产生多光子吸收，从而形成 一个起始点区域，用于沿着一条线在晶片内熔融的处理区域进行切割。 因此，可以从用于自然切割的起点区域或以相对小的力产生断裂，从而到达前表面和后表面。 因此，在形成切割起点区域之后，通过芯片接合树脂层将膨胀膜附着到晶片的背面，然后扩大时，可以沿着线切割晶片和芯片接合树脂层。

    SEMICONDUCTOR SUBSTRATE CUTTING METHOD
    4.
    发明申请
    SEMICONDUCTOR SUBSTRATE CUTTING METHOD 有权
    半导体基板切割方法

    公开(公告)号：US20100203678A1

    公开(公告)日：2010-08-12

    申请号：US12603145

    申请日：2009-10-21

    申请人： Kenshi FUKUMITSU ,  Fumitsuu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

    发明人： Kenshi FUKUMITSU ,  Fumitsuu FUKUYO ,  Naoki UCHIYAMA ,  Ryuji SUGIURA ,  Kazuhiro ATSUMI

    IPC分类号： H01L21/78 ,  H01L21/50

    CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

    摘要： A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided.A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17. Therefore, when an expansion film 21 is attached to the rear face 17 of the wafer 11 by way of a die bonding resin layer 23 after forming the starting point region for cutting 8 and then expanded, the wafer 11 and die bonding resin layer 23 can be cut along the line along which the substrate should be cut 5.

    摘要翻译： 提供一种半导体衬底切割方法，其可以与芯片接合树脂层一起有效地切割具有由功能器件形成的正面的半导体衬底。 在晶片11的背面17作为激光入射面的状态下，将聚光点P定位在晶片11内的激光L照射形成有功能元件15的正面3的晶圆11， 为了产生多光子吸收，由此由于晶片11内的熔融处理区域13沿着基板切断的线5而形成切割起点区域8.因此，可以从起点区域产生断裂 用于自然地切割8或具有相对小的力，以便到达前表面3和后表面17.因此，当通过芯片接合树脂层将膨胀膜21附接到晶片11的后表面17时 在形成用于切割的起点区域8然后膨胀的情况下，可以沿着基板切割的线5切割晶片11和芯片接合树脂层23。

    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE 有权
    制造发光装置的方法

    公开(公告)号：US20130023076A1

    公开(公告)日：2013-01-24

    申请号：US13548632

    申请日：2012-07-13

    申请人： Naoki UCHIYAMA

    发明人： Naoki UCHIYAMA

    IPC分类号： H01L33/60

    CPC分类号： B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

    摘要： A light-emitting device manufacturing method comprises the steps of irradiating a substrate 2 having a III-V compound semiconductor layer 17 formed on a front face 2a with laser light L1 along lines to cut 5a, 5b, while locating a converging point P1 within the sapphire substrate 2 and using a rear face 2b thereof as a laser light entrance surface, and thereby forming modified regions 7a, 7b along the lines 5a, 5b within the substrate 2; then forming a light-reflecting layer on the rear face 2b of the substrate 2; and thereafter extending fractures generated from the modified regions 7a, 7b acting as a start point in the thickness direction of the substrate 2, and thereby cutting the substrate 2, the semiconductor layer 17 and the light-reflecting layer along the lines 5a, 5b, and manufacturing a light-emitting device.

    摘要翻译： 发光器件制造方法包括以下步骤：将沿着切割线5a，5b的激光L1照射形成在前面2a上的III-V族化合物半导体层17的基板2，同时将会聚点P1定位在 蓝宝石基板2并使用其背面2b作为激光入射面，从而沿基板2内的线5a，5b形成改质区域7a，7b; 然后在基板2的背面2b上形成光反射层; 然后延伸从作为基板2的厚度方向的起始点的改质区域7a，7b产生的断裂，从而沿着线5a，5b切断基板2，半导体层17和光反射层， 并制造发光装置。