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    Apparatus for synthesizing laser beams
    1.
    发明授权
    Apparatus for synthesizing laser beams 失效
    用于合成激光束的装置

    公开(公告)号：US07339975B2

    公开(公告)日：2008-03-04

    申请号：US10769995

    申请日：2004-02-03

    申请人： Fusao Yamanaka ,  Yoji Okazaki ,  Chiaki Goto ,  Shinichi Shimotsu

    发明人： Fusao Yamanaka ,  Yoji Okazaki ,  Chiaki Goto ,  Shinichi Shimotsu

    IPC分类号： H01S3/08

    CPC分类号： G02B19/0057 ,  G02B19/0014 ,  G02B19/0028 ,  G02B19/009 ,  G02B27/0961 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/4012 ,  H01S5/4031

    摘要： (Problem to be solved) To provide a laser beam synthesizing apparatus which is small in size and high in output power.(Means for solving the problem) A convergent angle transforming optical system 30 is disposed further upstream of the upstream-most position Pa in the positions where the optical axes of beam bundles La, Lb, Lc . . . which are radiated from a plurality of semiconductor lasers 11A, 11B, 112C . . . and converged in the fast axis view by a converging/dispersion lens 120 intersect each other in the fast axis view, and the whole beam bundle made up of the beam bundles La, Lb, Lc . . . passed through the converging/dispersion lens 120 is converged in the fast axis view by the convergent angle transforming optical system 30 so that the angle of convergence of the whole beam bundle is made smaller in the fast axis view, and introduced into the core 41 of an optical fiber 40.

    摘要翻译： （待解决的问题）提供一种尺寸小，输出功率高的激光束合成装置。 （解决问题的手段）在束流束束La，Lb，Lc的光轴的位置，将会聚角度变换光学系统30设置在最上游位置Pa的上游的上游。 。 。 它们从多个半导体激光器11A，11B，112C辐射。 。 。 并且通过在快轴视图中彼此相交的会聚/分散透镜120以及由束束La，Lb，Lc构成的整个束束而在快轴视图中会聚。 。 。 通过会聚/分散透镜120，通过会聚角度变换光学系统30在快轴视图中会聚，使得整个束束的会聚角度在快轴视图中变小，并被引入到 光纤40。

    Laser multiplexing apparatus
    2.
    发明授权
    Laser multiplexing apparatus 失效
    激光多路复用装置

    公开(公告)号：US06922288B2

    公开(公告)日：2005-07-26

    申请号：US10767457

    申请日：2004-01-30

    申请人： Fusao Yamanaka ,  Yoji Okazaki ,  Chiaki Goto

    发明人： Fusao Yamanaka ,  Yoji Okazaki ,  Chiaki Goto

    IPC分类号： G02B6/42 ,  G02B3/00 ,  G02B27/09 ,  H01S5/22 ,  G02B27/10 ,  G02B5/04 ,  F21K000/00

    CPC分类号： G02B19/0057 ,  G02B19/0028 ,  G02B27/0905

    摘要： In a laser light multiplexing apparatus: a collimating optical system collimates light beams emitted from semiconductor lasers so that the slow axes of the light beams become coplanar, and optical axes of the light beams become parallel to each other; a light beam rearrangement optical system constituted by prisms respectively arranged in correspondence with the light beams rearranges the light beams in such a manner that directions of the fast axes of the light beams are changed at different locations along a direction in which the light beams propagate, and the fast axes of the light beams become coplanar; and a convergence optical system converges a bundle of the light beams rearranged by the light beam rearrangement optical system, in directions of the fast axes and the slow axes of the light beams, and makes the converged bundle of the light beams enter an optical fiber.

    摘要翻译： 在激光多路复用装置中：准直光学系统对从半导体激光器发出的光束进行准直，使得光束的慢轴变得共面，并且光束的光轴变得彼此平行; 由与光束对应地分别配置的棱镜构成的光束重排光学系统以沿着光束传播方向的不同位置改变光束的快轴方向的方式重新排列光束， 光束的快轴变为共面; 会聚光学系统在由光束重排光学系统重新排列的光束在光束的快轴和慢轴方向上收敛，并使光束的会聚光束进入光纤。

    Laser module
    4.
    发明授权
    Laser module 有权
    激光模块

    公开(公告)号：US07301975B2

    公开(公告)日：2007-11-27

    申请号：US10954244

    申请日：2004-10-01

    申请人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano ,  Yoji Okazaki

    发明人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano ,  Yoji Okazaki

    IPC分类号： H01S3/04

    CPC分类号： G02B6/4206 ,  G02B6/4248

    摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 μg/g or less at 15° C.

    摘要翻译： 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。 在发光波长为350〜450nm，寿命为5500小时以上的半导体激光装置的内部的气密密封容器的激光组件中，通过GC / MS测定的有机挥发性气体产生量为10mug / g， 在150℃下较少位于容器中。 此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在15℃下为300mug / g以下的有机粘合剂。

    Laser apparatus having protection member at light-emission end of multimode optical fiber
    7.
    发明授权
    Laser apparatus having protection member at light-emission end of multimode optical fiber 有权
    具有多模光纤的发光端的保护部件的激光装置

    公开(公告)号：US07101094B2

    公开(公告)日：2006-09-05

    申请号：US10670473

    申请日：2003-09-26

    申请人： Kazuhiko Nagano ,  Yoji Okazaki ,  Teruhiko Kuramachi ,  Fusao Yamanaka

    发明人： Kazuhiko Nagano ,  Yoji Okazaki ,  Teruhiko Kuramachi ,  Fusao Yamanaka

    IPC分类号： G02B6/36

    CPC分类号： G02B6/4201 ,  G02B6/4206 ,  G02B6/424 ,  G02B6/4249 ,  G02B6/4254 ,  G02B6/4257 ,  G02B6/4273

    摘要： In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

    摘要翻译： 在激光装置中，多个半导体激光元件分别发射激光束; 多模光纤具有光入射端和发光端; 聚光系统收集从多个半导体激光元件发射的激光束，并将收集的激光束耦合到多模光纤的光入射端; 并且在多模光纤的发光端设置保护部件，将发光端保护于大气，并且具有位于与发光端至少预定距离的发光窗口。

    Laser module
    8.
    发明申请
    Laser module 有权
    激光模块

    公开(公告)号：US20050058167A1

    公开(公告)日：2005-03-17

    申请号：US10954244

    申请日：2004-10-01

    申请人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano ,  Yoji Okazaki

    发明人： Teruhiko Kuramachi ,  Fusao Yamanaka ,  Kazuhiko Nagano ,  Yoji Okazaki

    IPC分类号： G02B6/42 ,  H01S5/022 ,  G02B6/00

    CPC分类号： G02B6/4206 ,  G02B6/4248

    摘要： In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350˜450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 μg/g or less at 150° C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 μg/g or less at 15° C.

    摘要翻译： 在包含发光波长为350〜450nm的半导体激光装置的内部的气密密封容器的激光模块中，在容器中抑制有机挥发性气体的产生，延长了模块的使用寿命。 在发光波长为350〜450nm，寿命为5500小时以上的半导体激光装置的内部的气密密封容器的激光组件中，通过GC / MS测定的有机挥发性气体产生量为10mug / g， 在150℃下较少位于容器中。 此外，作为用于固定准直透镜等光学部件的有机粘合剂，使用通过GC / MS测定的有机挥发性气体产生在15℃下为300mug / g以下的有机粘合剂。

    Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
    9.
    发明申请
    Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 审中-公开
    在谐振器端面附近具有电流非注入区域的半导体激光器件及其制造方法

    公开(公告)号：US20050164420A1

    公开(公告)日：2005-07-28

    申请号：US11076918

    申请日：2005-03-11

    申请人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

    发明人： Toshiaki Kuniyasu ,  Fusao Yamanaka ,  Toshiaki Fukunaga

    IPC分类号： H01S5/042 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01L21/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/2203 ,  H01S5/3434

    摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.

    摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成SiO 2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极 设备周长。