公开(公告)号：US20180044587A1

公开(公告)日：2018-02-15

申请号：US15788302

申请日：2017-10-19

Applicant: GE Phosphors Technology, LLC

Inventor： Masatsugu MASUDA ,  Kenji TERASHIMA

IPC: C09K11/77 ,  H01L33/50 ,  C01B21/082 ,  C09K11/08 ,  H01L33/32 ,  C04B35/584 ,  C04B35/597 ,  C04B35/626 ,  C04B35/628 ,  C01B21/06 ,  B82Y30/00 ,  C04B35/581 ,  G02F1/1335

CPC classification number: C09K11/7728 ,  B82Y30/00 ,  C01B21/0602 ,  C01B21/0821 ,  C01B21/0826 ,  C01P2002/52 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/60 ,  C04B35/581 ,  C04B35/584 ,  C04B35/597 ,  C04B35/6262 ,  C04B35/62807 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3418 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/442 ,  C04B2235/5454 ,  C04B2235/766 ,  C04B2235/767 ,  C09K11/0883 ,  C09K11/7734 ,  F21K9/64 ,  G02F1/1336 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265

Abstract: There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII1−pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.

公开(公告)号：US20170081586A1

公开(公告)日：2017-03-23

申请号：US15371747

申请日：2016-12-07

Applicant: GE Phosphors Technology, LLC

Inventor： Masatsugu MASUDA ,  Kenji TERASHIMA

IPC: C09K11/77 ,  H01L33/32 ,  H01L33/50 ,  C09K11/08

CPC classification number: C09K11/7728 ,  B82Y30/00 ,  C01B21/0602 ,  C01B21/0821 ,  C01B21/0826 ,  C01P2002/52 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/60 ,  C04B35/581 ,  C04B35/584 ,  C04B35/597 ,  C04B35/6262 ,  C04B35/62807 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3418 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/442 ,  C04B2235/5454 ,  C04B2235/766 ,  C04B2235/767 ,  C09K11/0883 ,  C09K11/7734 ,  F21K9/64 ,  G02F1/1336 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265

Abstract: There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuaSibAlcOdNe, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIfEugSihAlkOmNn or a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MII1-pEup)MIIISiN3, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.