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公开(公告)号：US09406577B2
公开(公告)日：2016-08-02
申请号：US14201935
申请日：2014-03-10
发明人： Ranjan Rajoo , Kai Chong Chan
IPC分类号： H01L23/10 , B81C3/00 , H01L21/50 , H01L21/683 , H01L23/00
CPC分类号： H01L23/10 , B81C3/001 , H01L21/50 , H01L21/561 , H01L21/6835 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2224/03002 , H01L2224/04042 , H01L2224/131 , H01L2224/2732 , H01L2224/2741 , H01L2224/2745 , H01L2224/27462 , H01L2224/27464 , H01L2224/2761 , H01L2224/27618 , H01L2224/29011 , H01L2224/29014 , H01L2224/29078 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/2919 , H01L2224/3003 , H01L2224/30051 , H01L2224/3012 , H01L2224/30505 , H01L2224/73103 , H01L2224/73203 , H01L2224/83065 , H01L2224/83075 , H01L2224/8309 , H01L2224/83191 , H01L2224/83193 , H01L2224/83203 , H01L2224/83801 , H01L2224/83805 , H01L2224/83862 , H01L2224/83874 , H01L2224/8389 , H01L2224/83905 , H01L2224/92 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00 , H01L2924/014 , H01L2224/83 , H01L2224/0231 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing first and second wafers with top and bottom surfaces. The wafers include edge and non-edge regions, and the first wafer includes devices formed in the non-edge region. A first protection seal may be formed at the edge region of the first wafer. The first and second wafers may further be bonded to form a device stack. The protection seal in the device stack contacts the first and second wafers to form a seal, and protects the devices in subsequent processing.
摘要翻译： 公开了一种半导体晶片堆叠和形成半导体器件的方法。 该方法包括向第一和第二晶片提供顶表面和底表面。 晶片包括边缘和非边缘区域，并且第一晶片包括形成在非边缘区域中的器件。 可以在第一晶片的边缘区域形成第一保护密封。 第一和第二晶片可以进一步结合以形成器件堆叠。 装置堆叠中的保护密封件接触第一和第二晶片以形成密封，并且在随后的处理中保护装置。
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