公开(公告)号：US20190058082A1

公开(公告)日：2019-02-21

申请号：US15678385

申请日：2017-08-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Deepak K. NAYAK ,  Srinivasa R. BANNA ,  Ajey P. JACOB

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to uniform semiconductor nanowire and nanosheet light emitting diodes and methods of manufacture. The structure includes a buffer layer; at least one dielectric layer on the buffer layer, the at least one dielectric layer having a plurality of openings exposing the buffer layer; and a plurality of uniformly sized and shaped nanowires or nanosheets formed in the openings and extending above the at least one dielectric layer.

公开(公告)号：US20190013436A1

公开(公告)日：2019-01-10

申请号：US15643061

申请日：2017-07-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Deepak K. NAYAK ,  Srinivasa R. BANNA ,  Ajey P. JACOB

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/22

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diode (LED) structures and methods of manufacture. The method includes: forming a buffer layer on a substrate, the buffer layer having at least a lattice mismatch with the substrate; and relaxing the buffer layer by pixelating the buffer layer into discrete islands, prior to formation of a quantum well.

公开(公告)号：US20190006413A1

公开(公告)日：2019-01-03

申请号：US15635608

申请日：2017-06-28

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey P. JACOB ,  Deepak K. NAYAK ,  Srinivasa R. BANNA

IPC: H01L27/15 ,  H01L29/08 ,  H01L29/78 ,  H01L33/32 ,  H01L29/16 ,  H01L29/417 ,  H01L33/36 ,  H01L29/778 ,  H01L33/00 ,  H01L29/66 ,  H01L29/20 ,  H01L29/10

CPC classification number: H01L27/15 ,  H01L25/167 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/66522 ,  H01L29/66666 ,  H01L29/778 ,  H01L29/7827 ,  H01L29/872 ,  H01L33/007 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L2933/0016

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.