公开(公告)号：US09574287B2

公开(公告)日：2017-02-21

申请号：US14038139

申请日：2013-09-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  John A. Ott ,  Devendra K. Sadana

IPC: C30B25/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/16 ,  H01L33/00 ,  H01L33/32 ,  C30B29/02 ,  H01L33/12

CPC classification number: C30B25/18 ,  C30B25/183 ,  C30B29/02 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/1606 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

Abstract: A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

Abstract translation: 一种形成外延半导体材料的方法，其包括在半导体和含碳衬底上形成石墨烯层并在所述石墨烯层上沉积含金属的单层。 在含金属单层上形成含镓材料的外延层。 含有金属的单层的层叠堆叠和含镓材料的外延层从存在于半导体和含碳衬底上的石墨烯层切割。