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    Photodetector methods and photodetector structures
    1.
    发明授权
    Photodetector methods and photodetector structures 有权
    光电检测器方法和光电检测器结构

    公开(公告)号：US09466753B1

    公开(公告)日：2016-10-11

    申请号：US14837812

    申请日：2015-08-27

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： John J. Ellis-Monaghan ,  John C. S. Hall ,  Marwan H. Khater ,  Edward W. Kiewra ,  Steven M. Shank

    IPC: H01L31/18 ,  H01L31/103 ,  H01L31/0203 ,  H01L31/028 ,  H01L27/144

    CPC classification number: H01L31/1808 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14629 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1872

    Abstract: Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

    Abstract translation: 公开了一种形成光电检测器和光电检测器结构的方法。 在该方法中，在电介质层上形成多晶或非晶光吸收层，使其与光波导的单晶半导体芯接触。 然后将光吸收层封装在一个或多个应变消除层中，并进行快速熔融生长（RMG）工艺以使光吸收层结晶。 调节应变消除层以控制应变消除，使得在RMG过程期间，光吸收层保持无裂纹。 然后去除应变消除层，并且在光吸收层上形成封装层（例如，填充在RMG工艺期间产生的表面凹坑中）。 随后，通过封装层注入掺杂剂以形成用于PIN二极管的扩散区域。 由于封装层相对较薄，所以可以在扩散区域内实现所需的掺杂分布。

    PHOTODETECTOR METHODS AND PHOTODETECTOR STRUCTURES
    2.
    发明申请
    PHOTODETECTOR METHODS AND PHOTODETECTOR STRUCTURES 有权
    光电子方法和光电转换器结构

    公开(公告)号：US20170062647A1

    公开(公告)日：2017-03-02

    申请号：US15227081

    申请日：2016-08-03

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： John J. Ellis-Monaghan ,  John C. S. Hall ,  Marwan H. Khater ,  Edward W. Kiewra ,  Steven M. Shank

    IPC: H01L31/18 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/0216 ,  H01L27/144 ,  H01L31/105

    CPC classification number: H01L31/1808 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14629 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1872

    Abstract: Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.

    Abstract translation: 公开了一种形成光电检测器和光电检测器结构的方法。 在该方法中，在电介质层上形成多晶或非晶光吸收层，使其与光波导的单晶半导体芯接触。 然后将光吸收层封装在一个或多个应变消除层中，并进行快速熔融生长（RMG）工艺以使光吸收层结晶。 调节应变消除层以控制应变消除，使得在RMG过程期间，光吸收层保持无裂纹。 然后去除应变消除层，并且在光吸收层上形成封装层（例如，填充在RMG工艺期间产生的表面凹坑中）。 随后，通过封装层注入掺杂剂以形成用于PIN二极管的扩散区域。 由于封装层相对较薄，所以可以在扩散区域内实现所需的掺杂分布。

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