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    E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT
    4.
    发明申请
    E-FUSE STRUCTURE FOR AN INTEGRATED CIRCUIT PRODUCT 审中-公开
    集成电路产品的电子熔断器结构

    公开(公告)号：US20150340319A1

    公开(公告)日：2015-11-26

    申请号：US14817546

    申请日：2015-08-04

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xiaoqiang Zhang ,  O Sung Kwon ,  Jianghu Yan ,  Wen-Hu Hung ,  Roderick Miller ,  HongLiang Shen

    IPC: H01L23/525

    CPC classification number: H01L23/5256 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

    Abstract translation: 本文公开的电熔丝装置包括导电耦合到形成在衬底中的掺杂区域的阳极和阴极，其中阳极包括位于掺杂区域上的第一金属硅化物区域和第一导电金属接触层， 位于第一金属硅化物区域上方并且耦合到第一金属硅化物区域，并且阴极包括位于掺杂区域上的第二金属硅化物区域和位于第二金属硅化物区域之上并导电耦合到第二金属硅化物区域的第二导电金属接触点。 本文公开的方法包括在电子熔丝器件的衬底中形成掺杂区域，并且执行至少一个公共工艺操作以在电熔丝器件的掺杂区域上形成第一导电结构，并在源极上形成第二导电结构 /漏极区域。

    Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure
    6.
    发明授权
    Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure 有权
    形成用于集成电路产品的电熔丝的方法和所得的电熔丝结构

    公开(公告)号：US09159667B2

    公开(公告)日：2015-10-13

    申请号：US13951654

    申请日：2013-07-26

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Xiaoqiang Zhang ,  O Sung Kwon ,  Jianghu Yan ,  Wen-Hu Hung ,  Roderick Miller ,  HongLiang Shen

    IPC: H01L21/8238 ,  H01L23/525 ,  H01L21/768 ,  H01L27/06

    CPC classification number: H01L23/5256 ,  H01L21/28518 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

    Abstract translation: 本文公开的电熔丝装置包括导电耦合到形成在衬底中的掺杂区域的阳极和阴极，其中阳极包括位于掺杂区域上的第一金属硅化物区域和第一导电金属接触层， 位于第一金属硅化物区域上方并且耦合到第一金属硅化物区域，并且阴极包括位于掺杂区域上的第二金属硅化物区域和位于第二金属硅化物区域之上并导电耦合到第二金属硅化物区域的第二导电金属接触点。 本文公开的方法包括在电子熔丝器件的衬底中形成掺杂区域，并且执行至少一个公共工艺操作以在电熔丝器件的掺杂区域上形成第一导电结构，并在源极上形成第二导电结构 /漏极区域。

    PROGRAMMABLE E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT
    8.
    发明申请
    PROGRAMMABLE E-FUSE FOR AN INTEGRATED CIRCUIT PRODUCT 审中-公开
    用于集成电路产品的可编程电子保险丝

    公开(公告)号：US20140264731A1

    公开(公告)日：2014-09-18

    申请号：US13833934

    申请日：2013-03-15

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Andrew Kim ,  O Sung Kwon ,  Xiaoqiang Zhang ,  Seung-Hyun Rhee ,  Anurag Mittal

    IPC: H01L23/525 ,  H01L23/34

    CPC classification number: H01L23/5256 ,  H01L23/345 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: One illustrative e-fuse device disclosed herein includes first and second conductive structures, a first electrically conductive heat cage element that is conductively coupled to the first conductive structure, wherein the first heat cage element is adapted to carry an electrical current, a second electrically conductive heat cage element that is conductively coupled to the second conductive structure, wherein the second heat cage element is adapted to carry the electrical current, and a programmable, electrically conductive e-fuse element that is conductively coupled to each of the first and second electrically conductive heat cage elements and adapted to carry the electrical current, wherein the e-fuse element is positioned adjacent to each of the first and second electrically conductive heat cage elements.

    Abstract translation: 本文公开的一个示例性电熔丝装置包括第一和第二导电结构，第一导电加热笼元件，其导电耦合到第一导电结构，其中第一加热笼元件适于承载电流，第二导电 导热耦合到所述第二导电结构的热笼形元件，其中所述第二加热笼元件适于承载电流;以及可编程的导电电熔丝元件，其导电地耦合到所述第一和第二导电 加热笼形元件并且适于承载电流，其中所述电熔丝元件邻近所述第一和第二导电加热笼元件中的每一个定位。

    Electronic fuse having a substantially uniform thermal profile
    9.
    发明授权
    Electronic fuse having a substantially uniform thermal profile 有权
    具有基本均匀的热分布的电子保险丝

    公开(公告)号：US09293414B2

    公开(公告)日：2016-03-22

    申请号：US14551249

    申请日：2014-11-24

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： O Sung Kwon ,  Xiaoqiang Zhang ,  Anurag Mittal

    IPC: H01L23/522 ,  H01L29/00 ,  H01L27/06 ,  H01L27/108 ,  H01L23/525 ,  H01L23/367 ,  H01L23/532 ,  H01L27/10

    CPC classification number: H01L23/5256 ,  H01L23/3677 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53257 ,  H01L27/0629 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An electronic fuse includes a body, an anode coupled to the body, and a cathode coupled to the body. Each of the anode and the cathode includes a first line contacting the body. The first line is discontinuous along its length and includes a first portion and a second portion with a space therebetween. A second line is disposed above the first line and a plurality of vias couple the first and second lines. The first portion of the first line is coupled to a first subset of the plurality of vias and the second portion of the first line is coupled to a second subset of the vias.

    Abstract translation: 电子熔断器包括主体，耦合到主体的阳极和耦合到主体的阴极。 阳极和阴极中的每一个包括接触身体的第一线。 第一线沿其长度是不连续的，并且包括第一部分和第二部分之间的空间。 第二线设置在第一线上方，并且多个通孔耦合第一线和第二线。 第一行的第一部分耦合到多个通孔的第一子集，并且第一行的第二部分耦合到通孔的第二子集。

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