公开(公告)号：US09236397B2

公开(公告)日：2016-01-12

申请号：US14172365

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Judson R. Holt ,  Jinghong Li ,  Sanjay Mehta ,  Alexander Reznicek ,  Dominic J. Schepis

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/16 ,  H01L21/84 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L27/1211 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/16 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795

Abstract: A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.

Abstract translation: 在跨越半导体鳍片的栅极结构的垂直侧壁上形成复合间隔物结构。 在一个实施例中，复合间隔物结构包括内部低k电介质材料部分和外部氮化物材料部分。

公开(公告)号：US09245965B2

公开(公告)日：2016-01-26

申请号：US14327598

申请日：2014-07-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Balasubramanian S. Haran ,  Sanjay Mehta ,  Shom Ponoth ,  Ravikumar Ramachandran ,  Stefan Schmitz ,  Theodorus E. Standaert

IPC: H01L29/423 ,  H01L27/12 ,  H01L27/088 ,  H01L21/28 ,  H01L21/84 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L29/42364 ,  H01L21/28008 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/66545 ,  H01L29/6681

Abstract: A structure including a first plurality of fins and a second plurality of fins etched from a semiconductor substrate, and a fill material located above the semiconductor substrate and between the first plurality of fins and the second plurality of fins, the fill material does not contact either the first plurality of fins or the second plurality of fins.

Abstract translation: 包括从半导体衬底蚀刻的第一多个散热片和第二多个散热片的结构以及位于半导体衬底上方以及第一组散热片和第二组散热片之间的填充材料，填充材料不接触 第一多个翅片或第二多个翅片。

公开(公告)号：US20180033789A1

公开(公告)日：2018-02-01

申请号：US15224139

申请日：2016-07-29

Applicant: GLOBALFOUNDRIES INC. ,  International Business Machines Corporation

Inventor： Steven Bentley ,  Kwan-Yong Lim ,  Tenko Yamashita ,  Gauri Karve ,  Sanjay Mehta

IPC: H01L27/092 ,  H01L21/306 ,  H01L21/762 ,  H01L21/266 ,  H01L29/10 ,  H01L29/06 ,  H01L21/265 ,  H01L21/8238 ,  H01L29/167

CPC classification number: H01L27/0924 ,  H01L21/30604 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/167 ,  H01L29/66803

Abstract: We disclose semiconductor devices, comprising a semiconductor substrate comprising a substrate material; and a plurality of fins disposed on the substrate, each fin comprising a lower region comprising the substrate material, a dopant region disposed above the lower region and comprising at least one dopant, and a channel region disposed above the dopant region and comprising a semiconductor material, wherein the channel region comprises less than 1×1018 dopant molecules/cm3, as well as methods, apparatus, and systems for fabricating such semiconductor devices.