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    Methods, systems, and carrier media for evaluating reticle layout data
    1.
    发明授权
    Methods, systems, and carrier media for evaluating reticle layout data 有权
    用于评估标线布局数据的方法，系统和载体介质

    公开(公告)号：US07689966B2

    公开(公告)日：2010-03-30

    申请号：US11226698

    申请日：2005-09-14

    申请人： Gaurav Verma ,  Lance Glasser ,  Moshe E. Preil

    发明人： Gaurav Verma ,  Lance Glasser ,  Moshe E. Preil

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  G03F1/36

    摘要： Various computer-implemented methods are provided. One method for evaluating reticle layout data includes generating a simulated image using the reticle layout data as input to a model of a reticle manufacturing process. The simulated image illustrates how features of the reticle layout data will be formed on a reticle by the reticle manufacturing process. The method also includes determining manufacturability of the reticle layout data using the simulated image. The manufacturability is a measure of how accurately the features will be formed on the reticle. Also provided are various carrier media that include program instructions executable on a computer system for performing a method for evaluating reticle layout data as described herein. In addition, systems configured to evaluate reticle layout data are provided. The systems include a computer system and a carrier medium that includes program instructions executable on the computer system for performing method(s) described herein.

    摘要翻译： 提供了各种计算机实现的方法。 用于评估标线布局数据的一种方法包括使用标线布局数据作为对标线制造工艺的模型的输入来生成模拟图像。 模拟图像说明如何通过标线制造过程在掩模版上形成标线布局数据的特征。 该方法还包括使用模拟图像确定标线布局数据的可制造性。 可制造性是衡量在光罩上形成特征的准确度。 还提供了各种载体介质，其包括可在计算机系统上执行的程序指令，用于执行如本文所述的用于评估标线布局数据的方法。 此外，还提供了配置为评估标线布局数据的系统。 该系统包括计算机系统和载体介质，其包括可在计算机系统上执行以执行本文所述的方法的程序指令。

    Computer-implemented methods for detecting defects in reticle design data
    2.
    发明授权
    Computer-implemented methods for detecting defects in reticle design data 有权
    用于检测标线设计数据缺陷的计算机实现方法

    公开(公告)号：US07646906B2

    公开(公告)日：2010-01-12

    申请号：US11048630

    申请日：2005-01-31

    申请人： Zain K. Saidin ,  Yalin Xiong ,  Lance Glasser ,  Carl Hess ,  Moshe E. Preil

    发明人： Zain K. Saidin ,  Yalin Xiong ,  Lance Glasser ,  Carl Hess ,  Moshe E. Preil

    IPC分类号： G06K9/00

    CPC分类号： G03F1/84 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70533 ,  G03F7/70616 ,  G03F7/7065 ,  G03F7/70666 ,  G06Q30/0206

    摘要： Computer-implemented methods for detecting defects in reticle design data are provided. One method includes generating a first simulated image illustrating how the reticle design data will be printed on a reticle using a reticle manufacturing process. The method also includes generating second simulated images using the first simulated image. The second simulated images illustrate how the reticle will be printed on a wafer at different values of one or more parameters of a wafer printing process. The method further includes detecting defects in the reticle design data using the second simulated images. Another method includes the generating steps described above in addition to determining a rate of change in a characteristic of the second simulated images as a function of the different values. This method also includes detecting defects in the reticle design data based on the rate of change.

    摘要翻译： 提供了用于检测标线设计数据缺陷的计算机实现方法。 一种方法包括生成第一模拟图像，其示出如何使用标线制造工艺将掩模版设计数据印刷在掩模版上。 该方法还包括使用第一模拟图像生成第二模拟图像。 第二模拟图像示出了在晶片印刷过程的一个或多个参数的不同值下如何将掩模版印刷在晶片上。 该方法还包括使用第二模拟图像检测掩模版设计数据中的缺陷。 除了确定作为不同值的函数的第二模拟图像的特性的变化率之外，另一种方法包括上述生成步骤。 该方法还包括基于变化率检测掩模版设计数据中的缺陷。

    PHOTO-MASK AND WAFER IMAGE RECONSTRUCTION
    3.
    发明申请
    PHOTO-MASK AND WAFER IMAGE RECONSTRUCTION 有权
    照片和图像重建

    公开(公告)号：US20120189187A9

    公开(公告)日：2012-07-26

    申请号：US12475338

    申请日：2009-05-29

    申请人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    发明人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    IPC分类号： G06T7/00

    CPC分类号： G06T7/001 ,  G03F1/84 ,  G06T2207/30148

    摘要： A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

    摘要翻译： 系统接收掩模图案和对应于掩模图案的光掩模的至少一部分的第一图像。 该系统基于第一图像和掩模图案来确定光掩模的至少一部分的第二图像。 该第二图像的特征在于比第一图像更多的空间频率。

    Process Window Signature Patterns for Lithography Process Control
    4.
    发明申请
    Process Window Signature Patterns for Lithography Process Control 有权
    用于平版印刷过程控制的过程窗口签名模式

    公开(公告)号：US20120021343A1

    公开(公告)日：2012-01-26

    申请号：US13244218

    申请日：2011-09-23

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F1/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    摘要翻译： 公开了一种用于识别掩模的设备区域中的处理窗口签名图案的方法。 签名图案集合地提供了对一组工艺条件参数对光刻工艺的变化的唯一响应。 签名模式可以监控相关的过程状态参数，以了解过程漂移的迹象，分析过程状态参数，以确定哪些是限制和影响芯片产量，分析过程状态参数的变化以确定应反馈的校正 进入光刻工艺或转发到蚀刻工艺，识别不按照预期将预期图案转印到晶片的特定掩模，以及鉴定相对于工艺条件参数的变化共享共同特性并以类似方式表现的掩模组， 将图案转移到晶片。

    System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
    5.
    发明授权
    System and method for measuring and analyzing lithographic parameters and determining optimal process corrections 有权
    用于测量和分析光刻参数并确定最佳过程校正的系统和方法

    公开(公告)号：US07749666B2

    公开(公告)日：2010-07-06

    申请号：US11462022

    申请日：2006-08-02

    申请人： Michael J. Gassner ,  Stefan Hunsche ,  Yu Cao ,  Jun Ye ,  Moshe E. Preil

    发明人： Michael J. Gassner ,  Stefan Hunsche ,  Yu Cao ,  Jun Ye ,  Moshe E. Preil

    IPC分类号： G03C5/00 ,  G01B9/00 ,  G01B9/08 ,  G01B11/00 ,  G01N21/00

    CPC分类号： G03F7/70666 ,  G03F7/70641

    摘要： A method of using an in-situ aerial image sensor array is disclosed to separate and remove the focal plane variations caused by the image sensor array non-flatness and/or by the exposure tool by collecting sensor image data at various nominal focal planes and by determining best focus at each sampling location by analysis of the through-focus data. In various embodiments, the method provides accurate image data at best focus anywhere in the exposure field, image data covering an exposure-dose based process window area, and a map of effective focal plane distortions. The focus map can be separated into contributions from the exposure tool and contributions due to topography of the image sensor array by suitable calibration or self-calibration procedures. The basic method enables a wide range of applications, including for example qualification testing, process monitoring, and process control by deriving optimum process corrections from analysis of the image sensor data.

    摘要翻译： 公开了一种使用原位空间图像传感器阵列的方法，以分离和去除由图像传感器阵列非平坦度引起的焦平面变化和/或通过曝光工具通过在各种标称焦平面处收集传感器图像数据，并且通过 通过分析焦点数据确定每个采样位置的最佳焦点。 在各种实施例中，该方法在曝光区域的任何地方提供最佳焦点上的精确图像数据，覆盖基于曝光剂量的过程窗口区域的图像数据和有效焦平面失真的映射。 焦点图可以通过适当的校准或自校准程序分为曝光工具的贡献和由于图像传感器阵列的形貌造成的贡献。 基本方法可以通过从图像传感器数据分析中得出最佳的过程校正，实现广泛的应用，包括例如鉴定测试，过程监控和过程控制。

    Method for identifying and using process window signature patterns for lithography process control
    6.
    发明申请
    Method for identifying and using process window signature patterns for lithography process control 有权

    公开(公告)号：US20100151364A1

    公开(公告)日：2010-06-17

    申请号：US12660313

    申请日：2010-02-23

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F1/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    Method for identifying and using process window signature patterns for lithography process control
    7.
    发明授权
    Method for identifying and using process window signature patterns for lithography process control 有权
    用于识别和使用光刻过程控制的过程窗口签名模式的方法

    公开(公告)号：US07695876B2

    公开(公告)日：2010-04-13

    申请号：US11466978

    申请日：2006-08-24

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    摘要翻译： 公开了一种用于识别掩模的设备区域中的处理窗口签名图案的方法。 签名图案集合地提供了对一组工艺条件参数对光刻工艺的变化的唯一响应。 签名模式可以监控相关的过程状态参数，以了解过程漂移的迹象，分析过程状态参数，以确定哪些是限制和影响芯片产量，分析过程状态参数的变化以确定应反馈的校正 进入光刻过程或转发到蚀刻工艺，识别不按照预期将预期图案转印到晶片的特定掩模，以及鉴定相对于工艺条件参数的变化共享共同特性并以类似方式表现的掩模组， 将图案转移到晶片。

    Photo-mask and wafer image reconstruction
    8.
    发明授权
    Photo-mask and wafer image reconstruction 有权
    光掩模和晶片图像重建

    公开(公告)号：US08204295B2

    公开(公告)日：2012-06-19

    申请号：US12475354

    申请日：2009-05-29

    申请人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    发明人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    IPC分类号： G06K9/36

    CPC分类号： G06T7/001 ,  G03F1/84 ,  G06T2207/30148

    摘要： A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

    摘要翻译： 系统接收掩模图案和对应于掩模图案的光掩模的至少一部分的第一图像。 该系统基于第一图像和掩模图案来确定光掩模的至少一部分的第二图像。 该第二图像的特征在于比第一图像更多的空间频率。

    Methods and systems for detecting defects in a reticle design pattern
    9.
    发明授权
    Methods and systems for detecting defects in a reticle design pattern 有权
    用于检测标线设计图案中的缺陷的方法和系统

    公开(公告)号：US07769225B2

    公开(公告)日：2010-08-03

    申请号：US11314813

    申请日：2005-12-20

    申请人： Sagar A. Kekare ,  Ingrid B. Peterson ,  Moshe E. Preil

    发明人： Sagar A. Kekare ,  Ingrid B. Peterson ,  Moshe E. Preil

    IPC分类号： G06K9/00 ,  G01N21/00 ,  G01B5/28

    CPC分类号： G01N21/95607 ,  G03F1/84

    摘要： Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.

    摘要翻译： 提供了用于检测标线设计图案中的缺陷的计算机实现的方法和系统。 一种计算机实现的方法包括获取标线设计图案中的场的图像。 这些图像示出了如何以晶片印刷过程的一个或多个参数的不同值将晶片印刷在晶片上。 该领域包括第一模具和第二模具。 该方法还包括基于对应于两个或多个不同值的两个或更多个图像的比较来检测场中的缺陷。 另外，该方法包括确定位于第一管芯中的各个缺陷是否位于与位于第二管芯内的各个缺陷的管芯位置内基本相同的位置。