Fabrication of electronic devices by method that involves ion tracking
    7.
    发明授权
    Fabrication of electronic devices by method that involves ion tracking 失效
    通过涉及离子跟踪的方法制造电子设备

    公开(公告)号:US5913704A

    公开(公告)日:1999-06-22

    申请号:US855425

    申请日:1997-05-12

    摘要: Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.

    摘要翻译: 门电子发射器通过其中带电粒子通过轨道层(24,48或144)以形成带电粒子轨道(261,501或1461)的工艺制造。 轨道层沿着轨道被蚀刻以创建开放空间(281,521或1481)。 然后可以在分开以开放空间为中心的位置处形成电子发射元件(30或142D),之后设置图案化栅极层(34B,40B或158C)。 或者,轨道层中的开放空间可用于通过通常用作栅极层的下面的非绝缘层(46)蚀刻相应的孔(541)。 通过孔进行蚀刻,以在位于非绝缘层下方的绝缘层(24)中形成介电开放空间(561,961或1141)。 随后可以提供电子发射元件(30B,30 / 88D1,98 / 1011或1181),通常在电介质开放空间中。

    Use of early formed lift-off layer in fabricating gated
electron-emitting devices
    8.
    发明授权
    Use of early formed lift-off layer in fabricating gated electron-emitting devices 失效
    早期形成的剥离层在制造门控电子发射器件中的应用

    公开(公告)号:US5827099A

    公开(公告)日:1998-10-27

    申请号:US568885

    申请日:1995-12-07

    摘要: Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.

    摘要翻译: 门电子发射器通过其中带电粒子通过轨道层(24,48或144)以形成带电粒子轨道(261,501或1461)的工艺制造。 轨道层沿着轨道被蚀刻以创建开放空间(281,521或1481)。 然后可以在分开以开放空间为中心的位置处形成电子发射元件(30或142D),之后设置图案化栅极层(34B,40B或158C)。 或者,轨道层中的开放空间可用于通过通常用作栅极层的下面的非绝缘层(46)蚀刻相应的孔(541)。 通过孔进行蚀刻,以在位于非绝缘层下方的绝缘层(24)中形成介电开放空间(561,961或1141)。 随后可以提供电子发射元件(30B,30 / 88D1,98 / 1011或1181),通常在电介质开放空间中。

    Use of charged-particle tracks in fabricating gated electron-emitting
devices
    9.
    发明授权
    Use of charged-particle tracks in fabricating gated electron-emitting devices 失效
    在制造门控电子发射器件中使用带电粒子轨迹

    公开(公告)号:US5564959A

    公开(公告)日:1996-10-15

    申请号:US269229

    申请日:1994-06-29

    摘要: Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.

    摘要翻译: 门电子发射器通过其中带电粒子通过轨道层(24,48或144)以形成带电粒子轨道(261,501或1461)的工艺制造。 轨道层沿着轨道被蚀刻以创建开放空间(281,521或1481)。 然后可以在分开以开放空间为中心的位置处形成电子发射元件(30或142D),之后设置图案化栅极层(34B,40B或158C)。 或者,轨道层中的开放空间可用于通过通常用作栅极层的下面的非绝缘层(46)蚀刻相应的孔(541)。 通过孔进行蚀刻,以在位于非绝缘层下方的绝缘层(24)中形成介电开放空间(561,961或1141)。 随后可以提供电子发射元件(30B,30 / 88D1,98 / 1011或1181),通常在电介质开放空间中。

    Fabrication of filamentary field-emission device, including self-aligned
gate
    10.
    发明授权
    Fabrication of filamentary field-emission device, including self-aligned gate 失效
    制造丝状场致发射器件,包括自对准栅极

    公开(公告)号:US5462467A

    公开(公告)日:1995-10-31

    申请号:US118490

    申请日:1993-09-08

    IPC分类号: H01J1/304 H01J3/02 H01J9/02

    摘要: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer (24A) that overlies a lower conductive region (22) situated over insulating material of a supporting substrate (20). Electron-emissive filaments (30) occupy pores (28) extending through the porous layer. A conductive gate layer (34A) through which openings (36) extend at locations centered on the filaments typically overlies the porous layer. Cavities (38) are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.In fabricating the structure, the pores are preferably formed by etching charged-particle tracks. Electrochemical deposition is employed to selectively create the filaments in the pores. Self-alignment of the gate openings to the filaments is achieved with charged-particle track etching and/or further electrochemical processing.

    摘要翻译: 适用于大面积平板电视的场发射结构围绕位于位于支撑衬底(20)的绝缘材料之上的下导电区域(22)的绝缘多孔层(24A)周围。 电子发射丝(30)占据延伸穿过多孔层的孔(28)。 开口(36)通过所述导电栅极层(34A)延伸穿过长丝的位置,通常覆盖在多孔层上。 通常在多孔层中沿着其上表面在同样位于细丝上的位置处设置空腔(38)。 在制造结构时,优选通过蚀刻带电粒子迹线形成孔。 使用电化学沉积来选择性地在孔中产生细丝。 通过带电粒子轨迹蚀刻和/或进一步的电化学处理实现了栅极开口对长丝的自对准。