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公开(公告)号：US08427185B2
公开(公告)日：2013-04-23
申请号：US13024379
申请日：2011-02-10
申请人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
IPC分类号： G01R31/308 , G01R31/08
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译： 一种用于电气异常的光伏材料的在线检查方法。 第一电连接形成在光伏材料的第一表面上，并且第二电连接形成在光伏材料的相对的第二表面上。 在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。 分析感测到的局部电流的性质以检测光伏材料中的电气异常。
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公开(公告)号：US20110133750A1
公开(公告)日：2011-06-09
申请号：US13024379
申请日：2011-02-10
申请人： George H. Zapalac, JR. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, JR. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
IPC分类号： G01R31/02
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译： 一种用于电气异常的光伏材料的在线检查方法。 第一电连接形成在光伏材料的第一表面上，并且第二电连接形成于光伏材料的相对的第二表面。 在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。 分析感测到的局部电流的性质以检测光伏材料中的电气异常。
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公开(公告)号：US07906972B2
公开(公告)日：2011-03-15
申请号：US12631260
申请日：2009-12-04
申请人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译： 一种用于电气异常的光伏材料的在线检查方法。 第一电连接形成在光伏材料的第一表面上，并且第二电连接形成在光伏材料的相对的第二表面上。 在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。 分析感测到的局部电流的性质以检测光伏材料中的电气异常。
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公开(公告)号：US20100079147A1
公开(公告)日：2010-04-01
申请号：US12631260
申请日：2009-12-04
申请人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译： 一种用于电气异常的光伏材料的在线检查方法。 第一电连接形成在光伏材料的第一表面上，并且第二电连接形成于光伏材料的相对的第二表面。 在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。 分析感测到的局部电流的性质以检测光伏材料中的电气异常。
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公开(公告)号：US07649365B1
公开(公告)日：2010-01-19
申请号：US11690809
申请日：2007-03-24
申请人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
发明人： George H. Zapalac, Jr. , Kirk J. Bertsche , David L. Brown , J. Kirkwood H. Rough , David A. Soltz , Yehiel Gotkis
IPC分类号： G01R31/302 , G01R31/08
CPC分类号： H02S50/10
摘要： A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
摘要翻译： 一种用于电气异常的光伏材料的在线检查方法。 第一电连接形成在光伏材料的第一表面上，并且第二电连接形成在光伏材料的相对的第二表面上。 在光伏材料中感应到局部电流，并且使用第一和第二电连接来感测光伏材料中局部电流的特性。 分析感测到的局部电流的性质以检测光伏材料中的电气异常。
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6.发明授权Method of generating plasma having high ion density for substrate processing operation 失效用于生成用于基板处理操作的具有高离子密度的等离子体的方法
公开(公告)号：US5605599A
公开(公告)日：1997-02-25
申请号：US390337
申请日：1995-02-17
IPC分类号： C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , B44C1/22
CPC分类号： H01J37/321 , H05H1/46
摘要： An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 Watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.
摘要翻译： 用于集成电路制造的感应等离子体源包括围绕真空室的扩展螺旋图案的半球形感应线圈，其包含由压板支撑的半导体晶片。 感应线圈的绕组遵循保持真空的半球形石英钟罩的轮廓。 电源是具有约450KHz的频率和200-2000瓦特的功率的低频rf源，并且压力是约0.1-100mTorr的低压。 高频rf源独立地调节晶片上的偏置电压。
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公开(公告)号：US4654573A
公开(公告)日：1987-03-31
申请号：US735481
申请日：1985-05-17
CPC分类号： H02M7/10 , B60L11/1812 , B60L11/182 , B60L11/1872 , H02J7/025 , B60L2210/30 , B60L2230/16 , B60L2240/527 , B60L2240/529 , B60L2240/545 , Y02T10/7005 , Y02T10/705 , Y02T10/7088 , Y02T10/7241 , Y02T10/92 , Y02T90/122 , Y02T90/127 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y10S320/25
摘要： Apparatus for transferring electrical power between a power supplying apparatus and power consuming apparatus and having a separable high frequency transformer with a primary permanently mounted to the power supply apparatus and a secondary mounted about the power consuming apparatus. A charging control circuit mounted on the consuming apparatus, e.g. a mobile vehicle includes means for detecting current and voltage delivered through the transformer, and also for monitoring storage batteries within the vehicle. The power supply apparatus includes a power supply circuit comprising a ferrite core transformer and capacitor forming a parallel resonant circuit. The primaries of the transformer are alternately driven by a driver about opposing polarities. The drivers are controlled by a voltage-controlled pulse-width modulator which provides a square wave input to the drivers to cause them to alternatively energize the ferrite core transformer. Power is transferred across the inductor to the resonant circuit as portions of a sine wave. The power supply circuit also includes an internal current sensing circuit to shut current build-up down when current in the resonant circuit becomes too high, and an external control loop which senses power demands of the charging control circuit delivered via an optical communications link within the separable transformer.
摘要翻译： 一种用于在供电设备和耗电设备之间传送电力并具有可永久安装在电源设备上的可分离高频变压器的设备，以及围绕电力消耗设备安装的辅助设备。 安装在消费装置上的充电控制电路，例如， 移动车辆包括用于检测通过变压器输送的电流和电压的装置，以及用于监测车辆内的蓄电池的装置。 电源装置包括电源电路，其包括铁氧体磁芯变压器和形成并联谐振电路的电容器。 变压器的原色由驱动器交替地由相对极性驱动。 驱动器由电压控制的脉冲宽度调制器控制，该调制器向驱动器提供方波输入，以使它们交替地激励铁氧体磁芯变压器。 电力作为正弦波的一部分传递到电感器到谐振电路。 电源电路还包括内部电流检测电路，用于在谐振电路中的电流变得过高时关闭电流累积;以及外部控制环路，其感测通过内部的光通信链路传送的充电控制电路的功率需求 可分离变压器
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8.发明授权Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil 失效用于具有圆顶形感应线圈的集成电路制造的等离子体处理装置公开(公告)号：US06225744B1
公开(公告)日：2001-05-01
申请号：US08804584
申请日：1997-02-24
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： An induction plasma source for integrated circuit fabrication includes an induction coil which defines a generally convex surface. The convex surface may be in the form of a spherical section less than a hemisphere, a paraboloid, or some other smooth convex surface. The windings of the induction coil may be spaced at different intervals in different sections of the coil and may be in multiple layers in at least a portion of the coil. Varying the shape of the coil and the distribution of the coil windings allows the plasma to be shaped in a desired manner.
摘要翻译： 用于集成电路制造的感应等离子体源包括限定大致凸表面的感应线圈。 凸面可以是小于半球，抛物面或一些其它光滑凸面的球形部分的形式。 感应线圈的绕组可以在线圈的不同部分中以不同的间隔隔开，并且在线圈的至少一部分中可以是多层。 改变线圈的形状和线圈绕组的分布允许等离子体以期望的方式成形。
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9.发明授权Intergrated field effect transistor device for high power and voltage amplification of RF signals 失效集成场效应晶体管器件用于RF信号的高功率和电压放大
公开(公告)号：US06037618A
公开(公告)日：2000-03-14
申请号：US24821
申请日：1998-02-17
申请人： John H. Hall , J. Kirkwood H. Rough
发明人： John H. Hall , J. Kirkwood H. Rough
IPC分类号： H01L27/088 , H01L29/808 , H01L29/80 , H01L31/112
CPC分类号： H01L29/8086 , H01L27/088 , H01L29/8083
摘要： An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to the source of a second transistor which has a low input impedance matching the output impedance of the first transistor. The gate of the second transistor is held at a positive potential and functions to provide isolation of the varying drain signal from the drain of the first transistor and to provide a high impedance at the output terminal. This device structure provides high input impedance, high current gain, high output impedance and a linear operating characteristic.
摘要翻译： 集成晶体管器件采用线性三极管真空管工作，具有非常低的输出阻抗特性，栅极和漏极之间的相互作用大。 第一晶体管的漏极电流直接连接到具有与第一晶体管的输出阻抗匹配的低输入阻抗的第二晶体管的源极。 第二晶体管的栅极保持在正电位，并且用于提供来自第一晶体管的漏极的变化的漏极信号的隔离并且在输出端子处提供高阻抗。 该器件结构提供高输入阻抗，高电流增益，高输出阻抗和线性工作特性。
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公开(公告)号：US5648664A
公开(公告)日：1997-07-15
申请号：US376188
申请日：1995-01-20
IPC分类号： H01L29/808 , H01L29/74 , H01L29/80
CPC分类号： H01L29/8083
摘要： A BIFET vacuum tube replacement structure includes a plurality of devices that replicate the characteristics of a vacuum tube. The vacuum tube replacement structure has the same pin-out as the vacuum tube being replaced and so can be exchanged directly for a vacuum tube in an audio amplifier. The vacuum tube replacement structure is suitable for use in a wide range of audio amplifier applications without modification to the audio amplifiers. Further, there is no noticeable degradation to the human ear in the sound quality when the vacuum tube replacement structure is used in an audio amplifier in place of a vacuum tube. A unitary device that is a combination of a high impedance bipolar like transistor and a unipolar junction field effect transistor, that is referred to as a BIFET, is used in the vacuum tube replacement structure. In one embodiment, the bipolar like transistor is formed in combination with the gate of the unipolar junction field effect transistor. The vacuum tube replacement structure faithfully replicates input signals at low levels and also slowly and uniformly compresses the input signals at higher drive levels and under overdrive conditions.
摘要翻译： BIFET真空管更换结构包括复制真空管特性的多个装置。 真空管更换结构具有与更换真空管相同的引脚，因此可以直接用于音频放大器中的真空管。 真空管更换结构适用于广泛的音频放大器应用，而无需修改音频放大器。 此外，当在音频放大器中使用真空管替换结构来代替真空管时，声音质量没有显着的降低。 在真空管替换结构中使用了作为高阻抗双极晶体管和单极结场效应晶体管的组合的单一器件，被称为BIFET。 在一个实施例中，双极晶体管与单极结场效应晶体管的栅极组合形成。 真空管更换结构忠实地以低电平复制输入信号，并且在较高的驱动电平和过驱动条件下也缓慢均匀地压缩输入信号。
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