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    Methods Of Forming Integrated Circuit Devices Using Composite Spacer Structures
    5.
    发明申请
    Methods Of Forming Integrated Circuit Devices Using Composite Spacer Structures 有权
    使用复合间隔结构形成集成电路器件的方法

    公开(公告)号：US20080171406A1

    公开(公告)日：2008-07-17

    申请号：US12014689

    申请日：2008-01-15

    申请人： Takashi Orimoto ,  George Matamis ,  James Kai ,  Tuan Pham ,  Masaaki Higashitani ,  Henry Chien

    发明人： Takashi Orimoto ,  George Matamis ,  James Kai ,  Tuan Pham ,  Masaaki Higashitani ,  Henry Chien

    IPC分类号： H01L21/8247

    CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521

    摘要： Methods of fabricating integrated circuit devices are provided using composite spacer formation processes. A composite spacer structure is used to pattern and etch the layer stack when forming select features of the devices. A composite storage structure includes a first spacer formed from a first layer of spacer material and second and third spacers formed from a second layer of spacer material. The process is suitable for making devices with line and space sizes at less then the minimum resolvable feature size of the photolithographic processes being used. Moreover, equal line and space sizes at less than the minimum feature size. In one embodiment, an array of dual control gate non-volatile flash memory storage elements is formed using composite spacer structures. When forming the active areas of the substrate, with overlying strips of a layer stack and isolation regions therebetween, a composite spacer structure facilitates equal lengths of the strips and isolation regions therebetween.

    摘要翻译： 使用复合间隔物形成工艺提供制造集成电路器件的方法。 当形成设备的选择特征时，使用复合间隔物结构来图案化和蚀刻层堆叠。 复合存储结构包括由第一隔离物材料层形成的第一间隔物和由第二隔离物材料层形成的第二和第三间隔物。 该方法适用于制造具有小于所使用的光刻工艺的最小可分辨特征尺寸的线和空间尺寸的装置。 此外，等于线和空间大小小于最小特征尺寸。 在一个实施例中，使用复合间隔结构形成双控制非易失性闪存存储元件阵列。 当形成衬底的活性区域时，具有叠层的叠层和隔离区之间的复合间隔结构有利于条之间的等长长度和隔离区。

    SELF ALIGNED NON-VOLATILE MEMORY CELL AND PROCESS FOR FABRICATION
    6.
    发明申请
    SELF ALIGNED NON-VOLATILE MEMORY CELL AND PROCESS FOR FABRICATION 有权
    自对准非易失性存储器单元和制造工艺

    公开(公告)号：US20050003616A1

    公开(公告)日：2005-01-06

    申请号：US10600259

    申请日：2003-06-20

    申请人： Jeffrey Lutze ,  Tuan Pham ,  Henry Chien ,  George Matamis

    发明人： Jeffrey Lutze ,  Tuan Pham ,  Henry Chien ,  George Matamis

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423

    CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825

    摘要： Floating gate structures are disclosed that have a projection that extends away from the surface of a substrate. This projection may provide the floating gate with increased surface area for coupling the floating gate and the control gate. In one embodiment, the word line extends downwards on each side of the floating gate to shield adjacent floating gates in the same string. In another embodiment, a process for fabricating floating gates with projections is disclosed. The projection may be formed so that it is self-aligned to the rest of the floating gate.

    摘要翻译： 公开了浮动栅极结构，其具有远离衬底的表面延伸的突起。 该突起可以为浮动栅极提供增加的表面积，用于耦合浮动栅极和控制栅极。 在一个实施例中，字线在浮动栅极的每一侧向下延伸以屏蔽相同串中的相邻浮动栅极。 在另一个实施例中，公开了一种用于制造具有突起的浮动栅极的工艺。 突起可以形成为使得其与浮动栅极的其余部分自对准。

    Self-aligned non-volatile memory cell
    8.
    发明授权
    Self-aligned non-volatile memory cell 有权
    自对准非易失性存储单元

    公开(公告)号：US07504686B2

    公开(公告)日：2009-03-17

    申请号：US11469727

    申请日：2006-09-01

    申请人： Jeffrey W. Lutze ,  Tuan Pham ,  Henry Chien ,  George Matamis

    发明人： Jeffrey W. Lutze ,  Tuan Pham ,  Henry Chien ,  George Matamis

    IPC分类号： H01L29/76

    CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825

    摘要： Floating gate structures are disclosed that have a projection that extends away from the surface of a substrate. This projection may provide the floating gate with increased surface area for coupling the floating gate and the control gate. In one embodiment, the word line extends downwards on each side of the floating gate to shield adjacent floating gates in the same string. In another embodiment, a process for fabricating floating gates with projections is disclosed. The projection may be formed so that it is self-aligned to the rest of the floating gate.

    摘要翻译： 公开了浮动栅极结构，其具有远离衬底的表面延伸的突起。 该突起可以为浮动栅极提供增加的表面积，用于耦合浮动栅极和控制栅极。 在一个实施例中，字线在浮动栅极的每一侧向下延伸以屏蔽相同串中的相邻浮动栅极。 在另一个实施例中，公开了一种用于制造具有突起的浮动栅极的工艺。 突起可以形成为使得其与浮动栅极的其余部分自对准。