公开(公告)号：US06189484B1

公开(公告)日：2001-02-20

申请号：US09263642

申请日：1999-03-05

申请人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

发明人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32678

摘要： A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

摘要翻译： 具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。 反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。 反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。 反应器可以利用温度控制系统来维持室的表面上恒定的温度。

公开(公告)号：US06449871B1

公开(公告)日：2002-09-17

申请号：US09657997

申请日：2000-09-08

申请人： Arnold Kholodenko ,  Dmitry Lubomirsky ,  Guang-Jye Shiau ,  Peter K. Loewenhardt ,  Shamouil Shamouilian

发明人： Arnold Kholodenko ,  Dmitry Lubomirsky ,  Guang-Jye Shiau ,  Peter K. Loewenhardt ,  Shamouil Shamouilian

IPC分类号： F26B334

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.

摘要翻译： 用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于 衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

公开(公告)号：US06185839B1

公开(公告)日：2001-02-13

申请号：US09086704

申请日：1998-05-28

申请人： Arnold Kholodenko ,  Dmitry Lubomirsky ,  Guang-Jye Shiau ,  Peter K. Loewenhardt ,  Shamouil Shamouilian

发明人： Arnold Kholodenko ,  Dmitry Lubomirsky ,  Guang-Jye Shiau ,  Peter K. Loewenhardt ,  Shamouil Shamouilian

IPC分类号： F26B334

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.

摘要翻译： 用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于 衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

公开(公告)号：US06471822B1

公开(公告)日：2002-10-29

申请号：US09263001

申请日：1999-03-05

申请人： Gerald Yin ,  Peter Loewenhardt ,  Arnold Kholodenko ,  Hong Chin Shan ,  Chii Lee ,  Dan Katz

发明人： Gerald Yin ,  Peter Loewenhardt ,  Arnold Kholodenko ,  Hong Chin Shan ,  Chii Lee ,  Dan Katz

IPC分类号： H05H100

CPC分类号： H01J37/321 ,  H01J37/32669

摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.

摘要翻译： 本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。 将等离子体输送到具有工件的处理室。 本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空 泵开口。 本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极 相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。 载流导体可以产生磁桶的全部或部分。 本发明可以提供固定在处理室内的内壁件。 内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。

公开(公告)号：US20130048765A1

公开(公告)日：2013-02-28

申请号：US13661969

申请日：2012-10-26

申请人： Arnold Kholodenko ,  Cheng-Yu (Sean) Lin ,  Russell Martin

发明人： Arnold Kholodenko ,  Cheng-Yu (Sean) Lin ,  Russell Martin

IPC分类号： B05B1/00

CPC分类号： H01L21/67051 ,  Y10S134/902 ,  Y10T29/49826

摘要： A proximity head defined by a body having a length. The body includes a main bore defined therein and extending along the length. A resistor bore is defined in the body and extends along the length. The resistor bore defined below the main bore. A first plurality of bores defined between the main bore and the resistor bore and a second plurality of bores defined between the resistor bore and an exterior surface of the body. The exterior surface of the body defining a proximity surface of the proximity head.

摘要翻译： 由具有长度的主体限定的邻近头。 主体包括限定在其中并沿着长度延伸的主孔。 电阻孔定义在主体中并沿着长度延伸。 电阻孔位于主孔下方。 限定在主孔和电阻器孔之间的第一多个孔和限定在电阻器孔和主体的外表面之间的第二多个孔。 主体的外表面限定了邻近头部的接近表面。

公开(公告)号：US08313582B2

公开(公告)日：2012-11-20

申请号：US13370119

申请日：2012-02-09

申请人： Robert O'Donnell ,  Cheng-Yu (Sean) Lin ,  Arnold Kholodenko

发明人： Robert O'Donnell ,  Cheng-Yu (Sean) Lin ,  Arnold Kholodenko

IPC分类号： B08B3/00

CPC分类号： B08B3/04 ,  H01L21/67034 ,  H01L21/67051

摘要： A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete holes connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

摘要翻译： 形成和使用邻近头的系统和方法。 邻近头包括头表面，其包括第一区域，第二区域和内部返回区域。 所述第一区域包括第一平面区域和连接到对应的第一导管并且布置在第一排中的多个第一离散孔。 所述第二区域包括连接到相应的第二导管的第二平坦区域和多个第二离散孔。 所述内部返回区域设置在所述第一区域和所述第二区域之间并且邻近所述第二区域并且包括连接到相应的内部返回管道并布置在内部返回行中的多个内部返回离散孔。 第一行和内部返回行是平行的。 每个内部返回离散孔的边缘的一部分凹入头部表面。

公开(公告)号：US08146902B2

公开(公告)日：2012-04-03

申请号：US11743516

申请日：2007-05-02

申请人： Wing Lau Cheng ,  Helen Cheng, legal representative ,  Arnold Kholodenko

发明人： Wing Lau Cheng ,  Arnold Kholodenko

IPC分类号： B23Q3/00

CPC分类号： B32B5/26 ,  B32B5/28 ,  B32B27/04 ,  H01L21/67051 ,  H01L21/67346 ,  H01L21/67748 ,  H01L21/68764 ,  Y10S269/90 ,  Y10S269/901 ,  Y10T428/237 ,  Y10T428/24995 ,  Y10T428/31515

摘要： A carrier structure for supporting a substrate when being processed by passing the carrier through a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening, the opening being slightly larger than the substrate such that a gap exists between the substrate and the opening. The frame comprises a composite core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom sheet being formed from a polymer material. A method of manufacture is also described.

摘要翻译： 描述了当通过使载体通过由上下接近头形成的弯月面而被处理时用于支撑基板的载体结构。 载体包括具有开口尺寸的接收基板的框架和用于在开口内支撑基板的多个支撑销，该开口略大于基板，使得基板和开口之间存在间隙。 框架包括复合芯，顶片，底片，顶片和芯之间的芳族聚酰胺织物层，以及在底片和芯之间的第二层芳族聚酰胺织物。 顶片和底片由聚合物材料形成。 还描述了一种制造方法。

公开(公告)号：US08141566B2

公开(公告)日：2012-03-27

申请号：US11820590

申请日：2007-06-19

申请人： Robert O'Donnell ,  Cheng-Yu (Sean) Lin ,  Arnold Kholodenko

发明人： Robert O'Donnell ,  Cheng-Yu (Sean) Lin ,  Arnold Kholodenko

IPC分类号： B08B3/04

CPC分类号： B08B3/04 ,  H01L21/67034 ,  H01L21/67051

摘要： A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete hole connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

摘要翻译： 形成和使用邻近头的系统和方法。 邻近头包括头表面，其包括第一区域，第二区域和内部返回区域。 所述第一区域包括第一平面区域和连接到对应的第一导管并且布置在第一排中的多个第一离散孔。 所述第二区域包括连接到相应的第二导管的第二平坦区域和多个第二离散孔。 内部返回区域设置在第一区域和第二区域之间并且邻近第一区域并且包括连接到相应的内部返回导管并且​​布置在内部返回行中的多个内部返回离散孔。 第一行和内部返回行是平行的。 每个内部返回离散孔的边缘的一部分凹入头部表面。

公开(公告)号：US06795292B2

公开(公告)日：2004-09-21

申请号：US09861984

申请日：2001-05-15

申请人： Dennis Grimard ,  Arnold Kholodenko ,  Alex Veytser ,  Senh Thach ,  Wing Cheng

发明人： Dennis Grimard ,  Arnold Kholodenko ,  Alex Veytser ,  Senh Thach ,  Wing Cheng

IPC分类号： H01G2300

CPC分类号： H01L21/67109 ,  H01L21/67103

摘要： An apparatus for reducing by-product formation in a semiconductor wafer-processing chamber. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a first gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.

摘要翻译： 一种用于减少半导体晶片处理室中副产物形成的装置。 在第一实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘。 套环设置在周边凸缘之上，限定了它们之间的第一间隙，并限制卡盘。 加热器元件嵌入在轴环内并且适于连接到电源。 在第二实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘的卡盘以及嵌入其中的加热器元件的套环。 套环设置在周边凸缘上方以在其间形成间隙并限制卡盘。 此外，其中具有气体输送系统的基座设置在卡盘和轴环的下方。 在第三实施例中，该装置包括具有夹紧电极和径向延伸的周边凸缘，套环和具有嵌入其中的加热器元件的废料环的卡盘。 废环设置在周边凸缘之上，限定了它们之间的间隙，并且围绕卡盘。 将衣领卡在废物环上，将废物环卡在基座支架上。 此外，废环和底座各自具有用于调节套环温度的气体输送系统。

公开(公告)号：US06572814B2

公开(公告)日：2003-06-03

申请号：US09866353

申请日：2001-05-24

申请人： Shamouil Shamoulian ,  Arnold Kholodenko ,  Senh Thach ,  Wing Cheng

发明人： Shamouil Shamoulian ,  Arnold Kholodenko ,  Senh Thach ,  Wing Cheng

IPC分类号： B22F704

CPC分类号： H02N13/00 ,  Y10T29/49149

摘要： A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.

摘要翻译： 一种制造具有第一烧结层和第二烧结层的半导体晶片支撑卡盘装置的方法。 该方法包括以下步骤：提供具有多个气体分配端口的第一烧结层，并提供具有多个凹槽的第二烧结层。 第一烧结层堆叠在第二烧结层的顶部，在第一烧结层和第二烧结层之间设置扩散接合层。 然后，堆叠的第一和第二烧结层重新烧结，使得扩散接合层将第一和第二烧结层与第二烧结层结合在一起形成半导体晶片支撑装置。