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    Transistor design for use in the construction of an electronically driven display
    2.
    发明授权
    Transistor design for use in the construction of an electronically driven display 失效
    用于构建电子显示器的晶体管设计

    公开(公告)号：US06545291B1

    公开(公告)日：2003-04-08

    申请号：US09650620

    申请日：2000-08-30

    申请人： Karl R. Amundson ,  Gregg Duthaler ,  Paul S. Drzaic

    发明人： Karl R. Amundson ,  Gregg Duthaler ,  Paul S. Drzaic

    IPC分类号： H01L3524

    CPC分类号： H01L51/0516 ,  H01L27/32 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0512 ,  H01L51/0545

    摘要： A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

    摘要翻译： 具有由非矩形电极限定的沟道宽度W和沟道长度L的晶体管。 晶体管是具有绝缘栅电极的薄膜场效应晶体管。 源极和漏极之一连接到显示电极，一个连接到数据线。 源极和漏极可以相互交叉以提供所需的W / L比。 门连接到选择线。 显示电极与另一像素的选择线之间的重叠区域限定电容器。 晶体管被制造成位于显示电极的后面，以便最大化开口率。 该设计使得能够使用常规的印刷方法，例如丝网印刷，喷墨印刷，通过模版印刷，柔版印刷和胶版印刷。

    Transistor design for use in the construction of an electronically driven display
    3.
    发明授权
    Transistor design for use in the construction of an electronically driven display 有权
    用于构建电子显示器的晶体管设计

    公开(公告)号：US06750473B2

    公开(公告)日：2004-06-15

    申请号：US10354721

    申请日：2003-01-30

    申请人： Karl R. Amundson ,  Gregg Duthaler ,  Paul S. Drzaic

    发明人： Karl R. Amundson ,  Gregg Duthaler ,  Paul S. Drzaic

    IPC分类号： H01L3524

    CPC分类号： H01L51/0516 ,  H01L27/32 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0512 ,  H01L51/0545

    摘要： A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

    摘要翻译： 具有由非矩形电极限定的沟道宽度W和沟道长度L的晶体管。 晶体管是具有绝缘栅电极的薄膜场效应晶体管。 源极和漏极之一连接到显示电极，一个连接到数据线。 源极和漏极可以相互交叉以提供所需的W / L比。 门连接到选择线。 显示电极与另一像素的选择线之间的重叠区域限定电容器。 晶体管被制造成位于显示电极的后面，以便最大化开口率。 该设计使得能够使用常规的印刷方法，例如丝网印刷，喷墨印刷，通过模版印刷，柔版印刷和胶版印刷。

    Method for forming a patterned semiconductor film
    4.
    发明授权
    Method for forming a patterned semiconductor film 失效
    用于形成图案化半导体膜的方法

    公开(公告)号：US06498114B1

    公开(公告)日：2002-12-24

    申请号：US09651710

    申请日：2000-08-31

    申请人： Karl Amundson ,  Paul S. Drzaic ,  Jianna Wang ,  Gregg Duthaler ,  Peter Kazlas

    发明人： Karl Amundson ,  Paul S. Drzaic ,  Jianna Wang ,  Gregg Duthaler ,  Peter Kazlas

    IPC分类号： H01L2131

    CPC分类号： H01L51/0016 ,  B41J3/4076 ,  G02F1/1334 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/28 ,  H01L51/0002 ,  H01L51/0004 ,  H01L51/0014 ,  H01L51/0015 ,  H01L51/0019 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.

    摘要翻译： 提供了一种在半导体膜中形成图案的工艺。 该方法包括以下步骤：提供衬底; 提供邻近所述衬底的有机半导体膜; 并且在所述有机半导体膜的选定部分附近提供破坏性试剂，所述破坏剂基本上改变所述有机半导体膜的全部厚度以改变所述有机半导体膜的选定部分的性质，使得所述有机半导体膜的选定部分的性质 膜与有机半导体膜的剩余部分的性质不同。 一种制造晶体管的方法，包括以下步骤：提供衬底; 在所述衬底附近提供栅电极; 在所述衬底和所述栅极附近提供栅极电介质; 提供邻近栅极电介质的源电极和漏电极; 以图案提供与栅极电介质相邻的掩模，使得源电极，漏电极和栅电介质的一部分保持暴露; 并且提供包括有机半导体和多个无机胶体粒子之一的半导体层，与源电极，漏电极，栅极电介质的部分和掩模相邻，从而形成晶体管，半导体层的厚度较小 比掩模的厚度。

    Electrophoretic electronic displays with low-index films
    10.
    发明授权
    Electrophoretic electronic displays with low-index films 有权
    具有低折射率薄膜的电泳电子显示器

    公开(公告)号：US06865010B2

    公开(公告)日：2005-03-08

    申请号：US10319455

    申请日：2002-12-13

    申请人： Gregg Duthaler ,  Anthony Pullen

    发明人： Gregg Duthaler ,  Anthony Pullen

    IPC分类号： G02F1/1334 ,  G02F1/167 ,  G02B26/00

    CPC分类号： G02F1/167 ,  G02F1/1334

    摘要： The invention features a reflective display device and a method of making a reflective display device that has reduced light loss and/or pixel cross talk due to internal reflection. The device includes a window layer, a plurality of reflective particles, a material portion disposed between the window layer and the plurality of reflective particles, and a refractive layer disposed between the window and the material portion. The plurality of reflective particles scatters light received from the ambient environment. The window layer has an index of refraction that is greater than an index of refraction of the ambient environment. The refractive layer has an index of refraction that is less than the index of refraction of the window layer and less than an index of refraction of the material portion.

    摘要翻译： 本发明的特征在于一种反射显示装置和一种制造反射显示装置的方法，该反射显示装置由于内部反射而具有减少的光损失和/或像素串扰。 该装置包括窗口层，多个反射粒子，设置在窗口层和多个反射粒子之间的材料部分和设置在窗口和材料部分之间的折射层。 多个反射粒子散射从周围环境接收的光。 窗口层具有大于周围环境的折射率的折射率。 折射层的折射率小于窗口层的折射率，并且小于材料部分的折射率。