Transistor design for use in the construction of an electronically driven display
    3.
    发明授权
    Transistor design for use in the construction of an electronically driven display 失效
    用于构建电子显示器的晶体管设计

    公开(公告)号:US06545291B1

    公开(公告)日:2003-04-08

    申请号:US09650620

    申请日:2000-08-30

    IPC分类号: H01L3524

    摘要: A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

    摘要翻译: 具有由非矩形电极限定的沟道宽度W和沟道长度L的晶体管。 晶体管是具有绝缘栅电极的薄膜场效应晶体管。 源极和漏极之一连接到显示电极,一个连接到数据线。 源极和漏极可以相互交叉以提供所需的W / L比。 门连接到选择线。 显示电极与另一像素的选择线之间的重叠区域限定电容器。 晶体管被制造成位于显示电极的后面,以便最大化开口率。 该设计使得能够使用常规的印刷方法,例如丝网印刷,喷墨印刷,通过模版印刷,柔版印刷和胶版印刷。

    Transistor design for use in the construction of an electronically driven display
    4.
    发明授权
    Transistor design for use in the construction of an electronically driven display 有权
    用于构建电子显示器的晶体管设计

    公开(公告)号:US06750473B2

    公开(公告)日:2004-06-15

    申请号:US10354721

    申请日:2003-01-30

    IPC分类号: H01L3524

    摘要: A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

    摘要翻译: 具有由非矩形电极限定的沟道宽度W和沟道长度L的晶体管。 晶体管是具有绝缘栅电极的薄膜场效应晶体管。 源极和漏极之一连接到显示电极,一个连接到数据线。 源极和漏极可以相互交叉以提供所需的W / L比。 门连接到选择线。 显示电极与另一像素的选择线之间的重叠区域限定电容器。 晶体管被制造成位于显示电极的后面,以便最大化开口率。 该设计使得能够使用常规的印刷方法,例如丝网印刷,喷墨印刷,通过模版印刷,柔版印刷和胶版印刷。