摘要:
Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.
摘要:
An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要:
A system and method of use of a storage capacitor to improve the appearance and addressing characteristics of an electronically driven display. The capacitor is formed by the overlap of portions of electrodes used to address different pixels, or by the overlap of an addressing line and a conductor. An insulator layer situated between the capacitor electrodes can be the same insulator layer present in an FET transistor used to address the pixel. Methods of use of capacitors to achieve improved display addressing are disclosed.
摘要:
An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要:
A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.
摘要:
A thin-film transistor includes a gate electrode having first and second gate electrode edges on opposed sides, and a drain electrode having a first edge that overlaps the first gate electrode edge, and a second edge that overlaps the second gate electrode edge. A diode array is fabricated by successive deposition of a conductive layer, a doped semiconductor layer and an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line. Another display pixel unit provides reduced pixel electrode voltage shifts using a source line and a balance line.
摘要:
A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line.
摘要:
A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared semiconductor layer extends continuously between the first and second transistors, and includes a concentration of dopant that increases a resistivity of the semiconductor layer and reduces a leakage current through the semiconductor layer while permitting functioning of the transistor array.
摘要:
An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).
摘要:
An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).