ATHERMAL OPTICAL FILTER WITH ACTIVE TUNING AND SIMPLIFIED CONTROL
    2.
    发明申请
    ATHERMAL OPTICAL FILTER WITH ACTIVE TUNING AND SIMPLIFIED CONTROL 有权
    具有主动调谐和简化控制的高温光学滤波器

    公开(公告)号:US20140212092A1

    公开(公告)日:2014-07-31

    申请号:US13751492

    申请日:2013-01-28

    IPC分类号: G02B6/26

    摘要: Embodiments of the invention describe systems, apparatuses and methods for providing athermicity and a tunable spectral response for optical filters. Finite impulse response (FIR) filters are commonly implemented in photonic integrated circuits (PICs) to make devices such as wavelength division multiplexing (WDM) devices, asymmetric Mach-Zehnder interferometers (AMZIs) and array waveguide gratings (AWGs). Athermicity of an FIR filter describes maintaining a consistent frequency transmission spectrum as the ambient temperature changes. A tunable spectral response for an FIR filter describes changing the spectrum of an FIR filter based on its application, as well as potentially correcting for fabrication deviations from the design. In addition, embodiments of the invention reduce energy dissipation requirements and control complexity compared to prior art solutions.

    摘要翻译: 本发明的实施例描述了用于为滤光器提供静止性和可调谐光谱响应的系统,设备和方法。 有限脉冲响应(FIR)滤波器通常在光子集成电路(PIC)中实现,以制造诸如波分复用(WDM)器件,不对称马赫 - 策德尔干涉仪(AMZI)和阵列波导光栅(AWG)等器件。 FIR滤波器的散热性描述了在环境温度变化时保持一致的频率透射光谱。 用于FIR滤波器的可调谐频谱响应描述了根据其应用改变FIR滤波器的频谱,以及潜在地校正与设计的制造偏差。 此外,与现有技术的解决方案相比,本发明的实施例降低了能量耗散要求和控制复杂性。

    Heterogeneous microwave photonic circuits
    4.
    发明授权
    Heterogeneous microwave photonic circuits 有权
    异质微波光子电路

    公开(公告)号:US09166678B1

    公开(公告)日:2015-10-20

    申请号:US13605658

    申请日:2012-09-06

    IPC分类号: H04B10/00 H04B10/11

    摘要: Embodiments of the invention describe (M)MPICs, which include RF processing components and heterogeneous silicon photonic components that include a first region of silicon material and a second region of non-silicon material with high electro-optic efficiency (e.g., III-V material). Said heterogeneous silicon components are fabricated from the silicon and non-silicon material, and therefore may be interconnected via silicon/non-silicon waveguides formed from the above described regions of silicon/non-silicon material. The effect of interconnecting these components via said optical waveguides is that an RF signal may be processed using photonic components consistent with the size of an MMIC, without the need for any optical fibers; therefore, embodiments of the invention describe a chip scale microwave IC that has the broad optical bandwidth of photonics without any optical interfaces to fiber. Furthermore, in some embodiments, the RF processing components, heterogeneous photonic components, and control circuitry may be included in the same chip-scale package.

    摘要翻译: 本发明的实施方案描述了(M)MPIC,其包括RF处理组件和包括硅材料的第一区域和具有高电光效率的非硅材料的第二区域(例如III-V材料)的异质硅光子组件 )。 所述异质硅元件由硅和非硅材料制成,因此可以通过硅/非硅材料的上述区域形成的硅/非硅波导来互连。 通过所述光波导将这些部件互连的效果是可以使用与MMIC的尺寸一致的光子分量来处理RF信号,而不需要任何光纤; 因此,本发明的实施例描述了一种芯片级微波IC,其具有光纤的宽的光学带宽,而没有光纤的任何光接口。 此外,在一些实施例中,RF处理组件,异质光子组件和控制电路可以包括在相同的芯片级封装中。

    Heterogeneous waveguide integrated optical isolator and circulator utilizing one or more optical grating couplers
    5.
    发明授权
    Heterogeneous waveguide integrated optical isolator and circulator utilizing one or more optical grating couplers 有权
    使用一个或多个光栅耦合器的异质波导集成光隔离器和循环器

    公开(公告)号:US08660391B1

    公开(公告)日:2014-02-25

    申请号:US13249804

    申请日:2011-09-30

    申请人: Gregory Alan Fish

    发明人: Gregory Alan Fish

    摘要: Embodiments of the invention utilize optical structures created by processes in the wafer fabrication foundry to form optical isolators and circulators. Grating coupling structures are utilized to couple light having a chosen polarization component into free space through non-reciprocal rotation material; said light is captured by another set of grating coupling structures after experiencing a 45 degree rotation of the polarization. By non-reciprocally rotating the polarization, the input and output ports of the optical isolator will be different depending on the direction of the light propagation.The amount of non-reciprocal rotation material utilized by embodiments of the invention may be small, and the grating coupling structures may be efficiently made to couple to each other as their field profiles may be matched and their position may be precisely defined by lithographic means.

    摘要翻译: 本发明的实施例利用由晶片制造代工厂中的工艺产生的光学结构来形成光学隔离器和循环器。 光栅耦合结构用于将具有选定的偏振分量的光通过不可逆旋转材料耦合到自由空间中; 所述光在经历45度旋转偏振之后被另一组光栅耦合结构俘获。 通过不相互旋转极化,光隔离器的输入和输出端口将根据光传播的方向而不同。 由本发明的实施例使用的不可逆旋转材料的量可以很小,并且可以有效地使光栅耦合结构彼此耦合,因为它们的场分布可以匹配,并且它们的位置可以由光刻装置精确地限定。

    High index bonding layer for hybrid photonic devices
    6.
    发明授权
    High index bonding layer for hybrid photonic devices 有权
    用于混合光子器件的高折射率键合层

    公开(公告)号:US08358897B1

    公开(公告)日:2013-01-22

    申请号:US13450332

    申请日:2012-04-18

    IPC分类号: G02B6/10 G02B6/00

    摘要: Embodiments of the invention are hybrid photonic devices including a first semiconductor slab (i.e. region) comprising a silicon material and a second semiconductor slab, comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region. A bonding layer may be formed on the second semiconductor slab to enable the bonding of the first and second semiconductor slabs at the lateral overlap region. An optical waveguide is formed to be included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material and the bonding layer. Thus, in embodiments of the invention the bonding layer comprises a material with a refractive index of at least 2.0 so as to not affect the optical mode shape or propagation loss of the hybrid electro-optical device.

    摘要翻译: 本发明的实施例是包括第一半导体板(即,区域)的混合光子器件,其包括硅材料和第二半导体板,其包含III-V族材料,在第一半导体板上方并部分地重叠以形成横向重叠区域。 可以在第二半导体板上形成接合层,以便能够在横向重叠区域处接合第一和第二半导体板。 光波导形成为包括在横向重叠区域中并且包括硅半导体材料,III-V半导体材料和接合层。 因此,在本发明的实施例中,结合层包括折射率至少为2.0的材料,以便不影响混合电光器件的光学模式形状或传播损耗。

    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS

    公开(公告)号:US20180088290A1

    公开(公告)日:2018-03-29

    申请号:US15819521

    申请日:2017-11-21

    IPC分类号: G02B6/42 G02B6/30 G02B6/122

    摘要: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS
    9.
    发明申请
    LOW LOSS HETEROGENEOUS OPTICAL WAVEGUIDE TRANSITIONS 有权
    低损耗异质光波导过渡

    公开(公告)号:US20130272646A1

    公开(公告)日:2013-10-17

    申请号:US13444635

    申请日:2012-04-11

    IPC分类号: G02B6/12

    摘要: Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.

    摘要翻译: 本发明的实施例描述了包括具有锥形的III-V板的光学器件,该锥形包括第一区域和小于第一区域的第二区域。 所述第一区域接收光并限制所接收的光的光学模式; 因此,与现有技术方案相反,光学装置的所述III-V区域执行模式限制的光学功能。 本发明的实施例还描述了包括用于接收来自所述III-V板的光的硅板的光学器件,并且具有包括小于第一硅区的第一硅区和第二硅区的锥形。 所述第一区域接收光并限制所接收的光的光学模式。 因此,本发明的实施例描述了由混合区域到硅区域的低损耗跃迁产生的光学器件,对硅波导和III-V波导的设计的限制较少。