摘要:
Described herein are optical sensing devices for photonic integrated circuits (PICs). A PIC may comprise a plurality of waveguides formed in a silicon on insulator (SOI) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the SOI substrate and to emit an output wavelength comprising an infrared wavelength. Each of these lasers may comprise a resonant cavity included in one of the plurality of waveguides, and a gain material comprising a non-silicon material and adiabatically coupled to the respective waveguide. A light directing element may direct outputs of the plurality of heterogeneous lasers from the PIC towards an object, and one or more detectors may detect light from the plurality of heterogeneous lasers reflected from or transmitted through the object.
摘要:
Embodiments of the invention describe systems, apparatuses and methods for providing athermicity and a tunable spectral response for optical filters. Finite impulse response (FIR) filters are commonly implemented in photonic integrated circuits (PICs) to make devices such as wavelength division multiplexing (WDM) devices, asymmetric Mach-Zehnder interferometers (AMZIs) and array waveguide gratings (AWGs). Athermicity of an FIR filter describes maintaining a consistent frequency transmission spectrum as the ambient temperature changes. A tunable spectral response for an FIR filter describes changing the spectrum of an FIR filter based on its application, as well as potentially correcting for fabrication deviations from the design. In addition, embodiments of the invention reduce energy dissipation requirements and control complexity compared to prior art solutions.
摘要:
Embodiments of the invention describe systems, apparatuses and methods for providing athermicity and a tunable spectral response for optical filters. Finite impulse response (FIR) filters are commonly implemented in photonic integrated circuits (PICs) to make devices such as wavelength division multiplexing (WDM) devices, asymmetric Mach-Zehnder interferometers (AMZIs) and array waveguide gratings (AWGs). Athermicity of an FIR filter describes maintaining a consistent frequency transmission spectrum as the ambient temperature changes. A tunable spectral response for an FIR filter describes changing the spectrum of an FIR filter based on its application, as well as potentially correcting for fabrication deviations from the design. In addition, embodiments of the invention reduce energy dissipation requirements and control complexity compared to prior art solutions.
摘要:
Embodiments of the invention describe (M)MPICs, which include RF processing components and heterogeneous silicon photonic components that include a first region of silicon material and a second region of non-silicon material with high electro-optic efficiency (e.g., III-V material). Said heterogeneous silicon components are fabricated from the silicon and non-silicon material, and therefore may be interconnected via silicon/non-silicon waveguides formed from the above described regions of silicon/non-silicon material. The effect of interconnecting these components via said optical waveguides is that an RF signal may be processed using photonic components consistent with the size of an MMIC, without the need for any optical fibers; therefore, embodiments of the invention describe a chip scale microwave IC that has the broad optical bandwidth of photonics without any optical interfaces to fiber. Furthermore, in some embodiments, the RF processing components, heterogeneous photonic components, and control circuitry may be included in the same chip-scale package.
摘要:
Embodiments of the invention utilize optical structures created by processes in the wafer fabrication foundry to form optical isolators and circulators. Grating coupling structures are utilized to couple light having a chosen polarization component into free space through non-reciprocal rotation material; said light is captured by another set of grating coupling structures after experiencing a 45 degree rotation of the polarization. By non-reciprocally rotating the polarization, the input and output ports of the optical isolator will be different depending on the direction of the light propagation.The amount of non-reciprocal rotation material utilized by embodiments of the invention may be small, and the grating coupling structures may be efficiently made to couple to each other as their field profiles may be matched and their position may be precisely defined by lithographic means.
摘要:
Embodiments of the invention are hybrid photonic devices including a first semiconductor slab (i.e. region) comprising a silicon material and a second semiconductor slab, comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region. A bonding layer may be formed on the second semiconductor slab to enable the bonding of the first and second semiconductor slabs at the lateral overlap region. An optical waveguide is formed to be included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material and the bonding layer. Thus, in embodiments of the invention the bonding layer comprises a material with a refractive index of at least 2.0 so as to not affect the optical mode shape or propagation loss of the hybrid electro-optical device.
摘要:
Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.
摘要:
In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and stabilized wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices.
摘要:
Embodiments of the invention describe optical devices including a III-V slab having a taper including a first region and a second region smaller than the first. Said first region receives light and confines an optical mode of the received light; thus, as opposed to the prior art solutions, said III-V regions of optical devices perform the optical function of mode confinement. Embodiments of the invention further describe optical devices including a silicon slab to receive light from said III-V slab, and having a taper including a first silicon region and a second silicon region smaller than the first. Said first region receives light and confines an optical mode of the received light.Thus, embodiments of the invention describe optical devices created with a low loss transition from hybrid regions to silicon regions with fewer restrictions on the design of the silicon waveguides and the III-V waveguides.
摘要:
Embodiments describe transceiver architectures to enable ‘loopback’ operation, thereby allowing or on-chip or intra module characterization of the transceiver. This includes but is not limited to tests such as bit error rate (BER) characterization, received power characterization and calibration of filters (MUX, DMUX etc.) present in the transceiver. Embodiments may also describe architectures for superimposing low-speed data on to the signal coming out of a transmitter, which in turn enables low frequency communication between network elements in the external link.