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    Etch-selective bonding layer for hybrid photonic devices
    1.
    发明授权
    Etch-selective bonding layer for hybrid photonic devices 有权
    用于混合光子器件的蚀刻选择性结合层

    公开(公告)号：US08774582B1

    公开(公告)日：2014-07-08

    申请号：US13461634

    申请日：2012-05-01

    申请人： Matthew Jacob-Mitos ,  Gregory Alan Fish ,  Alexander W. Fang

    发明人： Matthew Jacob-Mitos ,  Gregory Alan Fish ,  Alexander W. Fang

    IPC分类号： G02B6/10 ,  G02B6/00 ,  H01L21/76 ,  H01L21/46 ,  H01L21/30

    CPC分类号： H01S5/22 ,  G02F1/025 ,  G02F2201/07 ,  G02F2202/102 ,  G02F2202/105 ,  H01L21/187 ,  H01S5/3213 ,  H01S5/3214

    摘要： “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.

    摘要翻译： “混合光子器件”描述了其中光学部分即光学模式包括硅和III-V半导体区域的器件，因此半导体材料的折射率和结合层区域的折射率直接影响 光学功能的设备。 现有技术的装置利用与III-V衬底相同材料的光学柔顺层; 然而，在接合过程的最后一个子过程中，基底必须被酸去除。 这些酸可以蚀刻到结合层中，导致缺陷在接合材料的界面处传播，不利地影响器件的光学模式形状和传播损耗。 本发明的实施例利用不受接合工艺的最后阶段（例如，衬底移除）的影响的半导体蚀刻选择性接合层，并且因此保护接合界面层免受影响。

    High index bonding layer for hybrid photonic devices
    2.
    发明授权
    High index bonding layer for hybrid photonic devices 有权
    用于混合光子器件的高折射率键合层

    公开(公告)号：US08358897B1

    公开(公告)日：2013-01-22

    申请号：US13450332

    申请日：2012-04-18

    申请人： Gregory Alan Fish ,  Matthew Jacob-Mitos

    发明人： Gregory Alan Fish ,  Matthew Jacob-Mitos

    IPC分类号： G02B6/10 ,  G02B6/00

    CPC分类号： G02F1/025 ,  G02B6/122 ,  H01S5/021 ,  H01S5/0215

    摘要： Embodiments of the invention are hybrid photonic devices including a first semiconductor slab (i.e. region) comprising a silicon material and a second semiconductor slab, comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region. A bonding layer may be formed on the second semiconductor slab to enable the bonding of the first and second semiconductor slabs at the lateral overlap region. An optical waveguide is formed to be included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material and the bonding layer. Thus, in embodiments of the invention the bonding layer comprises a material with a refractive index of at least 2.0 so as to not affect the optical mode shape or propagation loss of the hybrid electro-optical device.

    摘要翻译： 本发明的实施例是包括第一半导体板（即，区域）的混合光子器件，其包括硅材料和第二半导体板，其包含III-V族材料，在第一半导体板上方并部分地重叠以形成横向重叠区域。 可以在第二半导体板上形成接合层，以便能够在横向重叠区域处接合第一和第二半导体板。 光波导形成为包括在横向重叠区域中并且包括硅半导体材料，III-V半导体材料和接合层。 因此，在本发明的实施例中，结合层包括折射率至少为2.0的材料，以便不影响混合电光器件的光学模式形状或传播损耗。