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1.发明申请SEMICONDUCTOR DEVICES INCLUDING SHALLOW IMPLANTED REGIONS AND METHODS OF FORMING THE SAME 有权包括浅层植入区域的半导体器件及其形成方法公开(公告)号：US20110057232A1
公开(公告)日：2011-03-10
申请号：US12118243
申请日：2008-05-09
IPC分类号： H01L29/737 , H01L21/338
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/0843 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.
摘要翻译： 形成半导体器件的方法包括在III族氮化物半导体层上形成电介质层，在半导体层的间隔开的源极和漏极区域上选择性地去除电介质层的部分，将具有第一导电类型的离子直接注入到源 和漏区，退火半导体层和电介质层以激活注入的离子，并在半导体层的源极和漏极区上形成金属接触。
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公开(公告)号：US09711633B2
公开(公告)日：2017-07-18
申请号：US12118243
申请日：2008-05-09
IPC分类号： H01L21/338 , H01L29/778 , H01L29/08 , H01L29/66 , H01L23/29 , H01L23/31 , H01L29/20
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/0843 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.
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公开(公告)号：US09362459B2
公开(公告)日：2016-06-07
申请号：US12553025
申请日：2009-09-02
申请人： Sten Heikman , Matthew Jacob-Mitos , Ting Li , James Ibbetson
发明人： Sten Heikman , Matthew Jacob-Mitos , Ting Li , James Ibbetson
CPC分类号： H01L33/46 , H01L33/00 , H01L33/0062 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.
摘要翻译： 具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。 至少一个内表面被抛光以实现平滑的界面。 抛光剂可以在基体表面，复合部分的各个层上，或两者上进行。 所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。
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公开(公告)号：US20110049546A1
公开(公告)日：2011-03-03
申请号：US12553025
申请日：2009-09-02
申请人： STEN HEIKMAN , Matthew Jacob-Mitos , Ting Li , James Ibbetson
发明人： STEN HEIKMAN , Matthew Jacob-Mitos , Ting Li , James Ibbetson
CPC分类号： H01L33/46 , H01L33/00 , H01L33/0062 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.
摘要翻译： 具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。 至少一个内表面被抛光以实现平滑的界面。 抛光剂可以在基体表面上，复合部分的各个层上，或两者上进行。 所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。
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公开(公告)号：US08774582B1
公开(公告)日：2014-07-08
申请号：US13461634
申请日：2012-05-01
CPC分类号： H01S5/22 , G02F1/025 , G02F2201/07 , G02F2202/102 , G02F2202/105 , H01L21/187 , H01S5/3213 , H01S5/3214
摘要： “Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device.Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.
摘要翻译： “混合光子器件”描述了其中光学部分即光学模式包括硅和III-V半导体区域的器件，因此半导体材料的折射率和结合层区域的折射率直接影响 光学功能的设备。 现有技术的装置利用与III-V衬底相同材料的光学柔顺层; 然而，在接合过程的最后一个子过程中，基底必须被酸去除。 这些酸可以蚀刻到结合层中，导致缺陷在接合材料的界面处传播，不利地影响器件的光学模式形状和传播损耗。 本发明的实施例利用不受接合工艺的最后阶段（例如，衬底移除）的影响的半导体蚀刻选择性接合层，并且因此保护接合界面层免受影响。
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公开(公告)号：US08358897B1
公开(公告)日：2013-01-22
申请号：US13450332
申请日：2012-04-18
CPC分类号： G02F1/025 , G02B6/122 , H01S5/021 , H01S5/0215
摘要： Embodiments of the invention are hybrid photonic devices including a first semiconductor slab (i.e. region) comprising a silicon material and a second semiconductor slab, comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region. A bonding layer may be formed on the second semiconductor slab to enable the bonding of the first and second semiconductor slabs at the lateral overlap region. An optical waveguide is formed to be included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material and the bonding layer. Thus, in embodiments of the invention the bonding layer comprises a material with a refractive index of at least 2.0 so as to not affect the optical mode shape or propagation loss of the hybrid electro-optical device.
摘要翻译： 本发明的实施例是包括第一半导体板（即，区域）的混合光子器件，其包括硅材料和第二半导体板，其包含III-V族材料，在第一半导体板上方并部分地重叠以形成横向重叠区域。 可以在第二半导体板上形成接合层，以便能够在横向重叠区域处接合第一和第二半导体板。 光波导形成为包括在横向重叠区域中并且包括硅半导体材料，III-V半导体材料和接合层。 因此，在本发明的实施例中，结合层包括折射率至少为2.0的材料，以便不影响混合电光器件的光学模式形状或传播损耗。
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