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公开(公告)号：US5585220A
公开(公告)日：1996-12-17
申请号：US566025
申请日：1995-12-01
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , Y10S430/111 , Y10S430/115
摘要： The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.
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公开(公告)号：US06806026B2
公开(公告)日：2004-10-19
申请号：US10159635
申请日：2002-05-31
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： G03F7039
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物：其中R 1表示氢（H），1-20个碳的直链或支链烷基，或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基（CF 3）基团的取代的脂族基团，或取代或未取代的芳族基团; 并且其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3），二氟甲基（CHF 2），氟甲基（CH 2 F）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。
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公开(公告)号：US07014980B2
公开(公告)日：2006-03-21
申请号：US10916934
申请日：2004-08-12
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或 取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2） ）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。
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公开(公告)号：US07563558B2
公开(公告)日：2009-07-21
申请号：US11924005
申请日：2007-10-25
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F7/00 , G03F7/004 , C08F214/18
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。
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5.发明授权公开(公告)号：US07300739B2
公开(公告)日：2007-11-27
申请号：US10449181
申请日：2003-05-29
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物中，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。
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公开(公告)号：US20080233517A1
公开(公告)日：2008-09-25
申请号：US11924005
申请日：2007-10-25
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F7/004
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。
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公开(公告)号：US07393624B2
公开(公告)日：2008-07-01
申请号：US11820862
申请日：2007-06-20
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03C1/00
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。
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公开(公告)号：US07135595B2
公开(公告)日：2006-11-14
申请号：US11330659
申请日：2006-01-12
申请人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Brock , Richard A. DiPietro , Debra Fenzel-Alexander , Carl Larson , David R. Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory M. Wallraff
IPC分类号： C08F118/00 , C08F18/20 , C08F120/22 , C07C69/62 , C07C69/52
CPC分类号： C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108
摘要： A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
摘要翻译： 提供了一种光致抗蚀剂组合物，其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物，其中R 1表示氢（H），1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基（CF 3 N 3）基团的取代的脂族基团，或 取代或未取代的芳基; 其中R 3表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CO 2），或半或全氟化脂族链; 并且其中R 4表示三氟甲基（CF 3 S），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2） ）或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。
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9.发明授权Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions 有权氟化乙烯基醚，其共聚物，并用于平版印刷光刻胶组合物公开(公告)号：US07465837B2
公开(公告)日：2008-12-16
申请号：US11503356
申请日：2006-08-10
申请人： Richard A. DiPietro , Hiroshi Ito
发明人： Richard A. DiPietro , Hiroshi Ito
IPC分类号： C07C41/00
CPC分类号： C07C43/178 , C07C43/196 , C07C2602/42 , C08F16/24 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I) wherein at least one of X and Y is a fluorine atom, and L, R1, R2, R3, R4 are as defined herein. Also provided are copolymers prepared by radical polymerization of (I) and a second monomer that may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
摘要翻译： 提供具有式（I）结构的氟化乙烯基醚，其中X和Y中的至少一个是氟原子，L，R 1，R 2，R 3，R 4如本文所定义的式（I）的结构。 还提供了通过（I）的自由基聚合和可以不被氟化的第二单体制备的共聚物。 聚合物可用于平版印刷光刻胶组合物，特别是化学增强抗蚀剂。 在优选的实施方案中，聚合物对深紫外（DUV）辐射基本上是透明的，因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在基板上产生抗蚀剂图像的方法，即在集成电路等的制造中。
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10.发明授权公开(公告)号：US07150957B2
公开(公告)日：2006-12-19
申请号：US10424673
申请日：2003-04-25
申请人： Richard A. DiPietro , Hiroshi Ito
发明人： Richard A. DiPietro , Hiroshi Ito
IPC分类号： G03F7/038 , C08F114/18
CPC分类号： C07C43/178 , C07C43/196 , C07C2602/42 , C08F16/24 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Fluorinated vinyl ethers are provided having the structure of formula (I) the structure of formula (I) wherein at least one of X and Y is a fluorine atom, and L, R1, R2, R3, R4 are as defined herein. Also provided are copolymers prepared by radical polymerization of (I) and a second monomer that may not be fluorinated. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.
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