Photoresist composition
    1.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US07014980B2

    公开(公告)日:2006-03-21

    申请号:US10916934

    申请日:2004-08-12

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物,其中R 1表示氢(H),1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基(CF 3 N 3)基团的取代的脂族基团,或 取代或未取代的芳基; 其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CO 2),或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3 S),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2) )或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Photoresist composition
    2.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US06806026B2

    公开(公告)日:2004-10-19

    申请号:US10159635

    申请日:2002-05-31

    IPC分类号: G03F7039

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物:其中R 1表示氢(H),1-20个碳的直链或支链烷基,或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基(CF 3)基团的取代的脂族基团,或取代或未取代的芳族基团; 并且其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    photoresist composition
    4.
    发明申请
    photoresist composition 有权
    光致抗蚀剂组合物

    公开(公告)号:US20060128914A1

    公开(公告)日:2006-06-15

    申请号:US11330659

    申请日:2006-01-12

    IPC分类号: C08F220/22

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物,其中R 1表示氢(H),1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化的直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基(CF 3 N 3)基团的取代的脂族基团,或 取代或未取代的芳基; 其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CO 2),或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3 S),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2) )或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Photoresist composition
    5.
    发明申请
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US20050019696A1

    公开(公告)日:2005-01-27

    申请号:US10916934

    申请日:2004-08-12

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物:其中R 1表示氢(H),1至20个碳的直链或支链烷基,或半或全氟化线性 或碳原子数为1〜20的支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基(CF 3)基团的取代的脂族基团,或取代或未取代的芳族基团; 并且其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES
    10.
    发明申请
    NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES 有权
    基于酸性催化消除极性分子的负性电阻

    公开(公告)号:US20070026339A1

    公开(公告)日:2007-02-01

    申请号:US10449181

    申请日:2003-05-29

    IPC分类号: G03C1/00

    摘要: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译: 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含(1)具有极性官能团的第一单体; (2)第二单体; 和(3)赋予选自可交联官能团,耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关,而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物,其还可以包括光酸产生剂,交联剂,碱性化合物,溶剂,溶解促进剂,光碱产生剂,潜碱性化合物,表面活性剂,粘合促进剂和消泡剂。