Photoresists for visible light imaging
    8.
    发明授权
    Photoresists for visible light imaging 有权
    用于可见光成像的光致抗蚀剂

    公开(公告)号:US07354692B2

    公开(公告)日:2008-04-08

    申请号:US11125971

    申请日:2005-05-09

    IPC分类号: G03F7/031 G03F7/038 G03F7/039

    摘要: A class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译: 公开了一类光刻抗蚀剂组合物,其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂,并含有具有式(I)结构的光敏剂:其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基 R 1和R 2可以相同或不同,并且具有结构-XR 3,其中X是O或S,R“ SUP> 3是C 1 -C 6烃基或含杂原子的C 1 -C 6 N >烃基,R 4和R 5独立地选自氢和-XR 3 O 3,或者如果各自的邻位 另一个可以一起形成五元或六元芳环,条件是含有Ar 1,Ar 2或R 0的任何杂原子 > 3 是O或S.还公开了所公开的光致抗蚀剂的使用,特别是用于制造全息衍射光栅。