公开(公告)号：US06974770B2

公开(公告)日：2005-12-13

申请号：US10600034

申请日：2003-06-20

申请人： Gregory Costrini ,  Kia-Seng Low ,  David L. Rath ,  Michael C. Gaidis ,  Walter Glashauser

发明人： Gregory Costrini ,  Kia-Seng Low ,  David L. Rath ,  Michael C. Gaidis ,  Walter Glashauser

IPC分类号： H01L21/60 ,  H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/76897 ,  H01L21/76834

摘要： Self-aligning vias and trenches etched between adjacent lines of metallization allows the area of the dielectric substrate allocated to the via or trench to be significantly reduced without increasing the possibility of electrical shorts to the adjacent lines of metallization.

摘要翻译： 在相邻的金属化线之间蚀刻的自对准通孔和沟槽允许分配给通孔或沟槽的电介质衬底的面积显着减小，而不增加对相邻金属化线的电短路的可能性。

公开(公告)号：US06812141B1

公开(公告)日：2004-11-02

申请号：US10610609

申请日：2003-07-01

申请人： Michael C. Gaidis ,  Joachim Nuetzel ,  Walter Glashauser ,  Eugene O'Sullivan ,  Gregory Costrini ,  Stephen L. Brown ,  Frank Findeis ,  Chanro Park

发明人： Michael C. Gaidis ,  Joachim Nuetzel ,  Walter Glashauser ,  Eugene O'Sullivan ,  Gregory Costrini ,  Stephen L. Brown ,  Frank Findeis ,  Chanro Park

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  H01L27/222 ,  H01L2924/0002 ,  H01L2924/00

摘要： Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.

摘要翻译： 衬垫材料如钽，氮化钽，碳化硅中的金属化的封装区域允许使用侵蚀性或苛刻的加工步骤。 这些突出的处理步骤提供了制造新器件架构的可能性。 此外，通过封装金属化区域，可以防止金属离子迁移和电迁移。 此外，金属化的封装区域可以用作自对准蚀刻掩模。 因此，蚀刻在相邻的金属化区域之间的通孔允许分配给通孔的衬底的面积被显着地减小，而不增加相邻金属化区域的电短路的可能性。

公开(公告)号：US07097535B2

公开(公告)日：2006-08-29

申请号：US10114773

申请日：2002-04-02

申请人： Walter Glashauser ,  Benno Utess ,  Andreas Purath

发明人： Walter Glashauser ,  Benno Utess ,  Andreas Purath

IPC分类号： B24B49/00

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B49/16

摘要： A method and a configuration for conditioning a polishing pad surface are described. The method includes measuring a rotation table current or voltage as an input for a motor driving the rotation of the polishing pad versus a rotating conditioning head. The electrical power input is used as a measure of an actual abrasion effective in regenerating the polishing pad. Since the polishing pad commonly deteriorates by repeated usage, i.e. debris settles down onto its surface, the abrasion efficiency decreases. The method issues a warning signal, in response to the electrical power input exceeding a limit, to take actions for maintaining the uniformity of the conditioning process. The polishing pad rotation can be accelerated or the conditioning head pressure force or rotation can be increased in response to the warning signal. Therefore, the polishing pad can be conditioned.

公开(公告)号：US20050075049A1

公开(公告)日：2005-04-07

申请号：US10462422

申请日：2003-06-16

申请人： Katrin Ebner ,  David Erdmann ,  Walter Glashauser ,  Lutz Teichgraber

发明人： Katrin Ebner ,  David Erdmann ,  Walter Glashauser ,  Lutz Teichgraber

IPC分类号： B24B37/005 ,  B24B37/30 ,  B24B41/06 ,  H01L21/304 ,  B24B49/00 ,  B24B1/00

CPC分类号： B24B37/30 ,  B24B37/005 ,  B24B41/06 ,  Y10T156/1089 ,  Y10T156/1092

摘要： By applying heat and pressure to a backing film with an adhesive layer while mounting it to a polish head used for chemical mechanical polishing, inhomogeneities inside the adhesive layer, e.g. thickness and compressibility variations or air bubbles can easily be removed. A corresponding configuration includes a device for exerting a uniform pressure force, which can be a roller made of silicone or rubber, or a plate. The configuration also includes a device for heating and a control unit for controlling the heat and the pressure force. After the backing film is installed using this configuration and method, the polish head can be used to uniformly remove material from a semiconductor wafer surface and therefore the wafer yield is advantageously increased.

摘要翻译： 通过将热和压力施加到具有粘合剂层的背衬膜上，同时将其安装到用于化学机械抛光的抛光头，粘合剂层内的不均匀性，例如粘合剂层。 可以容易地去除厚度和压缩性变化或气泡。 相应的配置包括用于施加均匀压力的装置，其可以是由硅树脂或橡胶制成的辊或板。 该构造还包括用于加热的装置和用于控制热量和压力的控制单元。 在使用该配置和方法安装背衬膜之后，可以使用抛光头来均匀地从半导体晶片表面去除材料，因此有利地提高晶片产量。

公开(公告)号：US06419567B1

公开(公告)日：2002-07-16

申请号：US09638725

申请日：2000-08-14

申请人： Walter Glashauser

发明人： Walter Glashauser

IPC分类号： B24B2900

CPC分类号： B24B37/32 ,  B24B57/02

摘要： In a chemical-mechanical polishing machine (101) where a polishing head (100) holds a wafer (150) against a polishing pad (140), a retaining ring (300) that surrounds the wafer (150) has an open chamber (350) to distribute pressurized slurry (144) to the polishing pad (140) and to the periphery (153) of the wafer (150).

摘要翻译： 在抛光头（100）将晶片（150）保持在抛光垫（140）上的化学机械抛光机（101）中，围绕晶片（150）的保持环（300）具有开口室（350） ）将加压浆料（144）分配到抛光垫（140）和晶片（150）的周边（153）。

公开(公告)号：US07156933B2

公开(公告)日：2007-01-02

申请号：US10462422

申请日：2003-06-16

申请人： Katrin Ebner ,  David Erdmann ,  Walter Glashauser ,  Lutz Teichgräber

发明人： Katrin Ebner ,  David Erdmann ,  Walter Glashauser ,  Lutz Teichgräber

IPC分类号： B32B37/06 ,  B32B37/10

CPC分类号： B24B37/30 ,  B24B37/005 ,  B24B41/06 ,  Y10T156/1089 ,  Y10T156/1092

摘要： By applying heat and pressure to a backing film with an adhesive layer while mounting it to a polish head used for chemical mechanical polishing, inhomogeneities inside the adhesive layer, e.g. thickness and compressibility variations or air bubbles can easily be removed. A corresponding configuration includes a device for exerting a uniform pressure force, which can be a roller made of silicone or rubber, or a plate. The configuration also includes a device for heating and a control unit for controlling the heat and the pressure force. After the backing film is installed using this configuration and method, the polish head can be used to uniformly remove material from a semiconductor wafer surface and therefore the wafer yield is advantageously increased.

摘要翻译： 通过将热和压力施加到具有粘合剂层的背衬膜上，同时将其安装到用于化学机械抛光的抛光头，粘合剂层内的不均匀性，例如粘合剂层。 可以容易地去除厚度和压缩性变化或气泡。 相应的配置包括用于施加均匀压力的装置，其可以是由硅树脂或橡胶制成的辊或板。 该构造还包括用于加热的装置和用于控制热量和压力的控制单元。 在使用这种配置和方法安装背衬膜之后，可以使用抛光头来均匀地从半导体晶片表面去除材料，因此有利地提高了晶片产量。

公开(公告)号：US06593238B1

公开(公告)日：2003-07-15

申请号：US09723151

申请日：2000-11-27

申请人： David Weston Haggart, Jr. ,  Walter Glashauser

发明人： David Weston Haggart, Jr. ,  Walter Glashauser

IPC分类号： H01L21302

CPC分类号： H01L21/31055 ,  H01L21/31053

摘要： A method for determining an endpoint during chemical-mechanical polishing of a semiconductor wafer (100, 200) is disclosed. The method comprises the steps of depositing on a first layer (106, 206) to be polished a second layer (108, 208), the physical properties of the first layer (106, 206) being different from the physical properties of the second layer (108, 208). After that, the wafer (100, 200) is polished by chemical-mechanical polishing. Due to the different physical properties of the layers, a variation of the physical properties can be detected, and an endpoint can be determined on the basis of the detected variation. Further, a semiconductor wafer for use in a chemical-mechanical polishing process is disclosed.

摘要翻译： 公开了一种用于在半导体晶片（100,200）的化学机械抛光期间确定端点的方法。 该方法包括以下步骤：在第一层（106,206）上沉积以抛光第二层（108,208），第一层（106,206）的物理性质不同于第二层 （108,208）。 之后，通过化学机械抛光抛光晶片（100,200）。 由于层的不同物理性质，可以检测物理性质的变化，并且可以基于检测到的变化来确定端点。 此外，公开了一种用于化学机械抛光工艺的半导体晶片。

公开(公告)号：US4393129A

公开(公告)日：1983-07-12

申请号：US303094

申请日：1981-09-17

申请人： Walter Glashauser ,  Grigore-Vlad Ghica

发明人： Walter Glashauser ,  Grigore-Vlad Ghica

IPC分类号： G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H03H3/08 ,  G03C5/30

CPC分类号： G03F7/32 ,  Y10S430/143 ,  Y10S430/167

摘要： Stress and crack-free development of resist layers or films, for example composed of PMMA, used in production of galvanically generated flat precision parts is achieved. Resist layers having a thickness of at least 100 .mu.m are exposed via electron lithography or x-ray lithography techniques whereby very fine structure patterns having dimensions in the micron and sub-micron range are attained and developed with a developer comprised of a mixture of a material selected from the glycol ether group, a material selected from the primary amine group, a material selected from the aqueous group and a material selected from the azine group. Aspect ratios of 30:1 are achieved without dark errosion. Residual PMMA components remaining after development, as well as the developer itself, are fully removed with a post-development rinsing with water so that no disruptive layer residues remain on the surface which has been uncovered through development.

摘要翻译： 实现了用于生产电流产生的平板精密零件的抗蚀剂层或膜的抗应力和无裂纹显影，例如由PMMA组成的膜。 通过电子光刻或X射线光刻技术曝光具有至少100μm的厚度的抗蚀剂层，由此获得具有微米和亚微米范围尺寸的非常精细的结构图案，并用由 选自二醇醚基的材料，选自伯胺基的材料，选自水基的材料和选自吖嗪基的材料。 长宽比为30：1，无黑暗侵蚀。 在开发后残留的PMMA组分以及显影剂本身被完全除去，用水进行后期漂洗，使得在已经通过显影发现的表面上没有残留的破坏性层残留物。

公开(公告)号：US06739013B2

公开(公告)日：2004-05-25

申请号：US09950437

申请日：2001-09-10

申请人： Walter Glashauser ,  Lutz Teichgräber

发明人： Walter Glashauser ,  Lutz Teichgräber

IPC分类号： B08B1100

CPC分类号： H01L21/67046 ,  B08B1/04 ,  B08B11/02

摘要： A wafer cleaning apparatus includes a wafer supporting device for supporting a wafer to be cleaned, and sponges for cleaning the wafer. The sponges are arranged in contact with either surface of the wafer and are rotated along rotational axes that are parallel to the wafer. A sponge positioning device pushes the sponges against the wafer. A wafer rotation drive is adapted to rotate the wafer at a constant speed, and a sponge rotation drive system is adapted to rotate the sponges at a constant speed. A closed loop controller receives motor current signals from the wafer rotation drive and/or the sponge rotation drive system, and the closed loop controller provides an adjustment signal to the sponge positioning device. The adjustment signal is for adjusting the friction between the sponges and the wafer.

摘要翻译： 晶片清洗装置包括用于支撑要清洁的晶片的晶片支撑装置和用于清洁晶片的海绵。 海绵被布置成与晶片的任一表面接触并且沿着平行于晶片的旋转轴线旋转。 海绵定位装置将海绵推向晶片。 晶片旋转驱动器适于以恒定速度旋转晶片，并且海绵旋转驱动系统适于以恒定速度旋转海绵。 闭环控制器从晶片旋转驱动器和/或海绵旋转驱动系统接收电动机电流信号，并且闭环控制器向海绵定位装置提供调节信号。 调节信号用于调节海绵和晶片之间的摩擦力。

公开(公告)号：US06375549B1

公开(公告)日：2002-04-23

申请号：US09527859

申请日：2000-03-17

申请人： Walter Glashauser ,  Lutz Teichgräber ,  David Haggart ,  Katrin Ebner

发明人： Walter Glashauser ,  Lutz Teichgräber ,  David Haggart ,  Katrin Ebner

IPC分类号： B24B100

CPC分类号： B24B37/30 ,  B24B49/16 ,  H01L21/6833 ,  Y10T279/23

摘要： A polishing head (200) for a chemical-mechanical polishing machine that holds a semiconductor wafer (150) against a polishing pad (140) has a chuck (295) with a pressure chamber (210) to apply a down force substantially equally to the wafer backside (152). An electrode arrangement (270) within the chamber (210) is located coplanar to the wafer (150) to provide compensation to wafer or chuck irregularities by applying a compensation force having a distribution corresponding to the irregularities.

摘要翻译： 用于将半导体晶片（150）保持在抛光垫（140）上的用于化学机械抛光机的抛光头（200）具有带有压力室（210）的卡盘（295），以大致相等地施加向下的力 晶片背面（152）。 腔室（210）内的电极装置（270）与晶片（150）共面定位，以通过施加具有对应于不规则的分布的补偿力来向晶片或卡盘不规则性提供补偿。