公开(公告)号：US20060220726A1

公开(公告)日：2006-10-05

申请号：US11098344

申请日：2005-04-04

申请人： Gregory Ward ,  Mohamed Moosa ,  Mahbub Rashed

发明人： Gregory Ward ,  Mohamed Moosa ,  Mahbub Rashed

IPC分类号： H03K3/01

CPC分类号： H03K19/0016 ,  H03K19/0027

摘要： A well-bias system dynamically adjusts well-bias set points to optimal levels across an integrated circuit (IC) for enhanced power savings and component reliability during a standby or low-power mode of operation. A controller within the IC determines if the chip power supply voltage will be reduced during an imminent standby or low power mode and sets a register controlling a negative well-bias set point for asserting well-bias to charge wells of the IC accordingly. To minimize leakage current without compromising reliability, the well-bias set point is set to (1) an optimal well-bias set point if a reduced supply voltage is to be applied to the IC, or (2) a minimum well-bias set point when a nominal or high supply voltage is to be applied to the IC.

摘要翻译： 良好偏置系统通过集成电路（IC）将良好偏置设置点动态调整到最佳电平，从而在待机或低功耗工作模式下实现更高的功率节省和部件可靠性。 IC内部的一个控制器确定芯片电源电压在即将到来的待机或低功耗模式下是否会降低，并且设置一个控制负的良好偏置设置点的寄存器，以便将相位偏差充分提供给IC的电荷阱。 为了最小化漏电流而不损害可靠性，如果要对IC施加降低的电源电压，则将偏置设定点设置为（1）最佳阱偏置设定点，或（2）最小阱偏置集 当要向IC施加额定电压或高电源电压时。

公开(公告)号：US20070176669A1

公开(公告)日：2007-08-02

申请号：US11344511

申请日：2006-01-31

申请人： Mohamed Moosa ,  Sriram Kalpat ,  Leo Mathew

发明人： Mohamed Moosa ,  Sriram Kalpat ,  Leo Mathew

IPC分类号： H03K17/92

CPC分类号： H03K17/145 ,  H01L29/785 ,  H03K17/687

摘要： A device and method for temperature compensation of an electronic device are disclosed. The device includes a temperature bias controller with a temperature sensor. A bias signal based upon a signal from the temperature sensor is provided to a first gate of a multiple fin gate field effect transistor (multigate FinFET) transistor of a functional block. A second gate of the multigate FinFET transistor receives a control signal to control its operation within the functional block. In this configuration the first gate of the multigate FinFET transistor can be used for temperature compensation while the second gate is used for functional operation of the transistor. Specific embodiments of the present disclosure will be better understood with respect to the figures.

摘要翻译： 公开了一种用于电子设备的温度补偿的装置和方法。 该装置包括具有温度传感器的温度偏差控制器。 基于来自温度传感器的信号的偏置信号被提供给功能块的多鳍栅极场效应晶体管（多栅极FinFET）晶体管的第一栅极。 多栅极FinFET晶体管的第二栅极接收控制信号以控制其在功能块内的操作。 在该配置中，多栅极FinFET晶体管的第一栅极可用于温度补偿，而第二栅极用于晶体管的功能操作。 将更好地理解本发明的具体实施方式。

公开(公告)号：US20070085153A1

公开(公告)日：2007-04-19

申请号：US11250994

申请日：2005-10-14

申请人： Sriram Kalpat ,  Leo Mathew ,  Mohamed Moosa ,  Michael Sadd ,  Hector Sanchez

发明人： Sriram Kalpat ,  Leo Mathew ,  Mohamed Moosa ,  Michael Sadd ,  Hector Sanchez

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L27/1211 ,  H01L29/66795 ,  H01L29/785 ,  H03K5/133 ,  H03K2005/00026 ,  H03K2005/00058 ,  H03L7/0995

摘要： A voltage controlled oscillator (VCO) has a plurality of series-connected inverters. Within each inverter a first transistor has a first current electrode coupled to a first power supply voltage terminal, a second current electrode, a first control electrode coupled to an output terminal of another inverter of the plurality of series-connected inverters, and a second control electrode for receiving a first bias signal. A second transistor has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode coupled to a second power supply voltage terminal, and a first control electrode coupled to the first control electrode of the first transistor. The second control electrode of the first transistor of each inverter receives a same or separate analog control signal to adjust the threshold voltage of the first transistors thereof to affect frequency and phase of the VCO's signal.

摘要翻译： 压控振荡器（VCO）具有多个串联的反相器。 在每个逆变器内，第一晶体管具有耦合到第一电源电压端子的第一电流电极，耦合到多个串联逆变器的另一个反相器的输出端的第二电流电极，第一控制电极和第二控制电极 用于接收第一偏置信号的电极。 第二晶体管具有耦合到第一晶体管的第二电流电极的第一电流电极，耦合到第二电源电压端子的第二电流电极和耦合到第一晶体管的第一控制电极的第一控制电极。 每个逆变器的第一晶体管的第二控制电极接收相同或分开的模拟控制信号，以调节其第一晶体管的阈值电压，以影响VCO信号的频率和相位。

公开(公告)号：US20070223636A1

公开(公告)日：2007-09-27

申请号：US11387595

申请日：2006-03-23

申请人： Mohamed Moosa ,  Leo Mathew ,  Sriram Kalpat

发明人： Mohamed Moosa ,  Leo Mathew ,  Sriram Kalpat

IPC分类号： H03D3/24 ,  H04L7/00

CPC分类号： H03D13/00

摘要： A device and method for phase detection are disclosed. The device includes a phase differential module that provides a phase difference signal based on the phase difference between a data signal and a reference signal. The phase difference signal is provided to a first gate of a multi-gate fin-type field effect transistor (multi-gate FinFET) of the device. A second gate of the multi-gate FinFET transistor receives a bias signal that provides a phase detection threshold. A phase adjustment signal is provided at one or both of the FinFET current electrodes based on the phase difference signal and the bias signal.

摘要翻译： 公开了一种用于相位检测的装置和方法。 该装置包括相位差模块，该相位差模块基于数据信号和参考信号之间的相位差提供相位差信号。 相位差信号被提供给器件的多栅极鳍型场效应晶体管（多栅极FinFET）的第一栅极。 多栅极FinFET晶体管的第二栅极接收提供相位检测阈值的偏置信号。 基于相位差信号和偏置信号，在FinFET电流电极的一个或两个处提供相位调整信号。

公开(公告)号：US20070085721A1

公开(公告)日：2007-04-19

申请号：US11250993

申请日：2005-10-14

申请人： Mohamed Moosa ,  Sriram Kalpat ,  Leo Mathew

发明人： Mohamed Moosa ,  Sriram Kalpat ,  Leo Mathew

IPC分类号： H03M1/12

CPC分类号： H03M1/361 ,  H01L27/0886 ,  H01L27/1211 ,  H03M1/745

摘要： An analog to digital converter including a plurality of multiple independent gate field effect transistors (MIGFET) that provide a plurality of digital output signals, is provided. Each MIGFET of the plurality of MIGFETs may have first gate for receiving an analog signal, a second gate for being biased, and a current electrode for providing a digital output signal from among the plurality of the digital output signals. Each MIGFET of the plurality of MIGFETs may have a combination of body width, channel length that is unique among the plurality of MIGFETs to result in a threshold voltage that is unique among the plurality of MIGFETs. A digital to analog converter including a plurality of MIGFETs is also provided.

摘要翻译： 提供了包括提供多个数字输出信号的多个独立的栅极场效应晶体管（MIGFET）的模数转换器。 多个MIGFET的每个MIGFET可以具有用于接收模拟信号的第一栅极，用于偏置的第二栅极和用于从多个数字输出信号中提供数字输出信号的电流电极。 多个MIGFET的每个MIGFET可以具有体宽度，多个MIGFET之间唯一的沟道长度的组合，以产生多个MIGFET中唯一的阈值电压。 还提供了包括多个MIGFET的数模转换器。