摘要:
A clock skew controller for adjusting a skew between a first clock, which is input to a first clock mesh, and a second clock mesh input to a second clock mesh, includes a pulse generator adapted to output a pulse signal corresponding to a delay time between a first output clock output from the first clock mesh and a second output clock output from the second clock mesh, a pulse width detector adapted to generate a digital signal corresponding to a pulse width of the pulse signal, and a clock delay adjuster adapted to delay one of the first and second clocks by a time corresponding to the digital signal
摘要:
A clock skew controller for adjusting a skew between a first clock, which is input to a first clock mesh, and a second clock mesh input to a second clock mesh, includes a pulse generator adapted to output a pulse signal corresponding to a delay time between a first output clock output from the first clock mesh and a second output clock output from the second clock mesh, a pulse width detector adapted to generate a digital signal corresponding to a pulse width of the pulse signal, and a clock delay adjuster adapted to delay one of the first and second clocks by a time corresponding to the digital signal.
摘要:
A semiconductor memory device includes a memory cell array, a decoder, and an access control unit. The decoder generates a word line voltage according to an address for a plurality of memory cells in the memory cell array. The access control unit controls access to the plurality of memory cells according to the word line voltage and additional access information separate from the address.
摘要:
A domino logic circuit includes a first evaluation unit, a second evaluation unit and an output unit. The first evaluation unit precharges a first dynamic node, discharges a footer node in a first phase of a clock signal, and evaluates a plurality of input signals to determine a logic level of the first dynamic node in a second phase of the clock signal. The second evaluation unit precharges a second dynamic node in the first phase of the clock signal, and determines a logic level of the second dynamic node in response to a logic level of the footer node in the second phase of the clock signal. The output unit provides an output signal having a logic level according to levels of a first voltage of the first dynamic node and a second voltage of the second dynamic node.
摘要:
A semiconductor memory device includes a memory cell array, a decoder, and an access control unit. The decoder generates a word line voltage according to an address for a plurality of memory cells in the memory cell array. The access control unit controls access to the plurality of memory cells according to the word line voltage and additional access information separate from the address.
摘要:
For distributing a signal to loads in an area, the area is divided into a plurality of regions. A respective signal point is disposed in each region for providing the signal to a load in the region. A respective diffusion point is disposed between any two neighboring signal points. The signal is initially applied to a center point of the signal and diffusion points. The signal when received at a given signal or diffusion point is transmitted to any of the signal or diffusion points within a maximum distance from the given signal or diffusion point.
摘要:
A device which may be configured to generate delayed clock signals by a specified phase difference, which may include a clock generator circuit for generating at least one clock signal, a delayed clock signal generator for delaying the at least one clock signal, a phase detect circuit for generating a selecting signal based on the amount of phase delay detected according to a half-cycle (π), and in comparison with the clock signal, a phase interpolation circuit for controlling the delay time of the delayed clock signals and interpolating the delayed clock signals, and a selecting circuit which outputs the delayed clock signal delayed by a specified phase difference.
摘要:
A leakage current measurement circuit measuring a substrate leakage current and a gate leakage current in response to a variation in the size of an MOS transistor and a leakage current comparison circuit judging which one of the substrate leakage current and the gate leakage current is dominant. The leakage current measurement circuit includes a charge supply, a leakage current generator and a detection signal generator. The leakage current comparison circuit includes a charge supply, a leakage current comparator and a detection signal generator.
摘要:
Provided is a frequency multiplier including a delay circuit, an XOR gate, and a control circuit and a method of operating such a frequency multiplier to adjust the duty cycle of a clock signal. During operation of the frequency multiplier the delay circuit receives a first clock signal and generates a delayed clock signal. The XOR gate receives the first clock signal and the delayed clock signal, performs an XOR operation on the received signals and outputs a second clock signal that has a frequency that is a multiple of the first clock signal. The control circuit monitors the phase difference between the first clock signal and the delayed clock signal and outputs a control signal corresponding to the detected phase difference to the delay circuit to adjust the time delay applied to the first clock signal by the delay circuit.
摘要:
For distributing a signal to loads in an area, the area is divided into a plurality of regions. A respective signal point is disposed in each region for providing the signal to a load in the region. A respective diffusion point is disposed between any two neighboring signal points. The signal is initially applied to a center point of the signal and diffusion points. The signal when received at a given signal or diffusion point is transmitted to any of the signal or diffusion points within a maximum distance from the given signal or diffusion point.