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    Disc burner and its control method
    3.
    发明申请
    Disc burner and its control method 失效
    光盘刻录机及其控制方法

    公开(公告)号：US20050141386A1

    公开(公告)日：2005-06-30

    申请号：US10838255

    申请日：2004-05-05

    申请人： Guo-Zua Wu ,  Chien-Hsin Huang ,  Zu-Wen Chao ,  Chwan-Chan Chen

    发明人： Guo-Zua Wu ,  Chien-Hsin Huang ,  Zu-Wen Chao ,  Chwan-Chan Chen

    IPC分类号： G11B5/09 ,  G11B7/0045

    CPC分类号： G11B7/00456

    摘要： A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

    摘要翻译： 光盘刻录机及其控制方法适用于高速光盘刻录机，解决由于烧录速度超过编码速度而造成的光盘刻录故障问题。 插入缓冲器以将编码的数据分组存储，并且这些数据组按顺序用于光盘刻录目的。 因此，写入激光器的等待时间分散，不超过阈值等待时间，没有光盘刻录失败问题。

    Disc burner and its control method
    4.
    发明授权
    Disc burner and its control method 失效
    光盘刻录机及其控制方法

    公开(公告)号：US07190654B2

    公开(公告)日：2007-03-13

    申请号：US10838255

    申请日：2004-05-05

    申请人： Guo-Zua Wu ,  Chien-Hsin Huang ,  Zu-Wen Chao ,  Chwan-Chan Chen

    发明人： Guo-Zua Wu ,  Chien-Hsin Huang ,  Zu-Wen Chao ,  Chwan-Chan Chen

    IPC分类号： G11B7/00

    CPC分类号： G11B7/00456

    摘要： A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

    摘要翻译： 光盘刻录机及其控制方法适用于高速光盘刻录机，解决由于烧录速度超过编码速度而造成的光盘刻录故障问题。 插入缓冲器以将编码的数据分组存储，并且这些数据组按顺序用于光盘刻录目的。 因此，写入激光器的等待时间分散，不超过阈值等待时间，没有光盘刻录失败问题。

    MEMS device and method of making the same
    5.
    发明授权
    MEMS device and method of making the same 有权
    MEMS器件及其制作方法

    公开(公告)号：US07898081B2

    公开(公告)日：2011-03-01

    申请号：US12168057

    申请日：2008-07-03

    申请人： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Ming-I Wang

    发明人： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Chien-Hsin Huang ,  Ming-I Wang

    IPC分类号： H01L23/00 ,  H02K41/00

    CPC分类号： H04R31/00 ,  H04R2201/003 ,  Y10T29/49005

    摘要： A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.

    摘要翻译： MEMS器件包括设置在基板的同一侧上的通气孔结构和MEMS结构。 通气孔结构与MEMS结构相邻，其间具有蚀刻停止结构。 MEMS结构包括腔室，通气孔结构包括金属层，其上具有至少一个孔，作为通气孔，以通过蚀刻停止结构连接MEMS结构的室。 因此，MEMS器件具有侧向通气孔。 此外，由于通气孔结构和MEMS结构设置在基板的同一侧，所以制造过程方便且节省时间。

    KEY STRUCTURE
    6.
    发明申请
    KEY STRUCTURE 有权
    关键结构

    公开(公告)号：US20090167510A1

    公开(公告)日：2009-07-02

    申请号：US12340831

    申请日：2008-12-22

    申请人： Chien-Hsin Huang ,  Fu-Long Hong ,  Yi-Bin Ho

    发明人： Chien-Hsin Huang ,  Fu-Long Hong ,  Yi-Bin Ho

    IPC分类号： G08B6/00

    CPC分类号： H01H13/84 ,  H01H2217/012 ,  H01H2223/0345 ,  H01H2225/022

    摘要： A key structure including at least two protruding keys and a key frame is provided. The at least two protruding keys are arrayed adjacently. Each of the at least two protruding keys has a first side edge, a second side edge and a protrusion. The second side edge is opposite to the first side edge. The protrusion has a curved-convex surface, a first side surface and a second side surface. The curved-convex surface is getting protruding inwardly from the first side edge and the second side edge. The top end of the curved-convex surface has a crest line. The first side surface passes through the end points of the first side edge, the second side edge and the crest line in the same side. The second side surface is opposite to the first side surface. The key frame is used for carrying the at least two protruding keys.

    摘要翻译： 提供了包括至少两个突出键和键框的键结构。 至少两个突出键相邻排列。 所述至少两个突出键中的每一个具有第一侧边缘，第二侧边缘和突起。 第二侧边缘与第一侧边缘相对。 突起具有弯曲的凸面，第一侧面和第二侧面。 弯曲凸起表面从第一侧边缘和第二侧边缘向内突出。 弧形曲面的顶端具有峰顶线。 第一侧表面在同一侧通过第一侧边缘，第二侧边缘和顶部线的端点。 第二侧表面与第一侧表面相对。 关键帧用于承载至少两个突出键。

    METHOD OF FABRICATING CONDUCTIVE LAYER
    7.
    发明申请
    METHOD OF FABRICATING CONDUCTIVE LAYER 审中-公开
    制导导电层的方法

    公开(公告)号：US20070066055A1

    公开(公告)日：2007-03-22

    申请号：US11162696

    申请日：2005-09-20

    申请人： Chien-Hsin Huang ,  Wen-Ping Yen

    发明人： Chien-Hsin Huang ,  Wen-Ping Yen

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76838 ,  H01L21/321 ,  H01L21/32134 ,  H01L21/32135

    摘要： A method of fabricating a patterned conductive layer is provided. First, a conductive layer whose material includes at least aluminum-copper (Al—Cu) alloy is formed on a substrate. Then, a heat treatment process is performed to heat the conductive layer to a temperature higher than the phase change temperature of the Al—Cu alloy. Next, the conductive layer is patterned. The method in the present invention can avoid the formation of metallic educt and facilitate subsequent etching processes.

    摘要翻译： 提供了制造图案化导电层的方法。 首先，在基板上形成材料至少包含铝 - 铜（Al-Cu）合金的导电层。 然后，进行热处理工序，将导电层加热到比Al-Cu合金的相变温度高的温度。 接下来，对导电层进行图案化。 本发明的方法可以避免金属离子的形成并促进随后的蚀刻工艺。

    Voltage dividing resistor
    8.
    发明授权
    Voltage dividing resistor 有权

    公开(公告)号：US10825588B2

    公开(公告)日：2020-11-03

    申请号：US16594073

    申请日：2019-10-07

    申请人： Chung-Lin Liu ,  Chien-Hsin Huang ,  Wen-Chung Chen

    发明人： Chung-Lin Liu ,  Chien-Hsin Huang ,  Wen-Chung Chen

    IPC分类号： H01C1/14 ,  H01C1/084

    摘要： Herein disclosed is a voltage dividing resistor comprising a resistance bar and a plurality of dividing connectors. The resistance bar has a first end and a second end and provides a first current path, which stretches from the first end to the second end along the resistance bar. The distance between the first end and the second end is less than the length of the first current path. The first and second ends are configured to be electrically connected to a power source. The dividing connectors are electrically connected to different locations on the first current path. Each of the dividing connectors has a contact pad. The resistance bar is not coplanar with the contact pads. A divided voltage is obtained from a pair of dividing connectors chosen from the plurality of dividing connectors.

    Method of fabricating a MEMS microphone with trenches serving as vent pattern
    9.
    发明授权
    Method of fabricating a MEMS microphone with trenches serving as vent pattern 有权
    制造具有沟槽作为排气孔图案的MEMS麦克风的方法

    公开(公告)号：US08865500B2

    公开(公告)日：2014-10-21

    申请号：US12699797

    申请日：2010-02-03

    申请人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    发明人： Chien-Hsin Huang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su ,  Chao-An Su ,  Tzung-Han Tan

    IPC分类号： H01L21/30

    CPC分类号： H01L21/30

    摘要： A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

    摘要翻译： 一种制造MEMS麦克风的方法包括：首先提供具有第一表面和第二表面的基底。 衬底分为逻辑区和MEMS区。 蚀刻衬底的第一表面以在MEMS区域中形成多个第一沟槽。 然后在多个第一沟槽中形成STI材料。 随后，蚀刻衬底的第二表面以在MEMS区域中形成第二沟槽，其中第二沟槽与每个第一沟槽连接。 最后，第一个沟槽中的STI材料被去除。