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公开(公告)号：US08298849B2
公开(公告)日：2012-10-30
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L21/00
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。
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2.发明授权Electrochromic device with improved transparent conductor and method for forming the same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US08665511B2
公开(公告)日：2014-03-04
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC分类号： G02F1/153
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译： 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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3.发明申请Electrochromic Device With Improved Transparent Conductor And Method For Forming The Same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US20130163064A1
公开(公告)日：2013-06-27
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译： 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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公开(公告)号：US20120196399A1
公开(公告)日：2012-08-02
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。
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5.发明授权公开(公告)号：US09011969B2
公开(公告)日：2015-04-21
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译： 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧氮化物层。 金属氧氮化物层包括第一金属和第二金属。 在透明基板上形成反射层。
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6.发明申请Low-E Panel With Improved Dielectric Layer And Method For Forming The Same 有权具有改进的介电层的Low-E面板及其形成方法公开(公告)号：US20130164560A1
公开(公告)日：2013-06-27
申请号：US13337962
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
CPC分类号： C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C17/3681
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
摘要翻译： 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧氮化物层。 金属氧氮化物层包括第一金属和第二金属。 在透明基板上形成反射层。
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公开(公告)号：US08557615B2
公开(公告)日：2013-10-15
申请号：US13310724
申请日：2011-12-03
IPC分类号： H01L21/00
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130143354A1
公开(公告)日：2013-06-06
申请号：US13310724
申请日：2011-12-03
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130136919A1
公开(公告)日：2013-05-30
申请号：US13307301
申请日：2011-11-30
CPC分类号： C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
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公开(公告)号：US08784934B2
公开(公告)日：2014-07-22
申请号：US13305550
申请日：2011-11-28
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Zhi-Wen Sun
IPC分类号： B05D5/06
CPC分类号： C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
摘要翻译： 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。
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