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1.发明授权Electrochromic device with improved transparent conductor and method for forming the same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US08665511B2
公开(公告)日：2014-03-04
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC分类号： G02F1/153
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译： 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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2.发明申请Electrochromic Device With Improved Transparent Conductor And Method For Forming The Same 失效具有改进的透明导体的电致变色器件及其形成方法公开(公告)号：US20130163064A1
公开(公告)日：2013-06-27
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译： 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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公开(公告)号：US08298849B2
公开(公告)日：2012-10-30
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L21/00
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。
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公开(公告)号：US20120196399A1
公开(公告)日：2012-08-02
申请号：US13269713
申请日：2011-10-10
申请人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
发明人： Guowen Ding , Hien Minh Huu Le , Guizhen Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/0324 , C23C14/024 , C23C14/0641 , C23C14/5866 , H01L21/02422 , H01L21/02439 , H01L21/02485 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L21/02568 , H01L21/02631 , H01L31/032 , H01L31/072 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.
摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。
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公开(公告)号：US08557615B2
公开(公告)日：2013-10-15
申请号：US13310724
申请日：2011-12-03
IPC分类号： H01L21/00
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130143354A1
公开(公告)日：2013-06-06
申请号：US13310724
申请日：2011-12-03
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译： 用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。 有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。
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公开(公告)号：US20130136919A1
公开(公告)日：2013-05-30
申请号：US13307301
申请日：2011-11-30
CPC分类号： C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.
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8.发明申请METHODS AND APPARATUSES FOR LOW RESISTIVITY Ag THIN FILM USING COLLIMATED SPUTTERING 审中-公开低电阻Ag薄膜的使用方法和装置公开(公告)号：US20130319847A1
公开(公告)日：2013-12-05
申请号：US13489079
申请日：2012-06-05
CPC分类号： C03C17/36 , C03C17/3644 , C03C17/366 , C03C17/3681 , C23C14/086 , C23C14/185 , C23C14/562
摘要： A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.
摘要翻译： 一种用于制造低辐射面板的方法，包括在基底或种子膜的高度光滑的层上形成高度光滑的银层。 高度平滑的层可以通过准直的溅射来实现，当到达衬底时降低溅射颗粒的角分布。
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9.发明申请METHOD OF FORMING ATO WITH HIGH THROUGHPUT AND ELLIPSOMETRY DIAGNOSTIC METHOD FOR THE TCO PROCESS 审中-公开用于TCO过程的具有高通量和ELLIPSOMETRY诊断方法的方法公开(公告)号：US20130136851A1
公开(公告)日：2013-05-30
申请号：US13307341
申请日：2011-11-30
CPC分类号： C23C14/08 , C23C14/0042 , C23C14/3464 , C23C14/545 , C23C14/5806 , C23C14/5853
摘要： A method for producing antimony doped tin oxide (ATO) films is discussed wherein the films are deposited by reactive sputtering using a non-poisoned mode and then annealed in an air ambient to fully oxidize the films and improve the resistivity and transmission characteristics, and the non-poisoned mode method could improve the throughput. A method using spectroscopic ellipsometry and an independent measurement of an additional optical or physical property is disclosed which results in a significantly improved prediction of the various optical and physical properties of the film, such that the method made the spectroscopic ellipsometry valuable for monitoring and controlling the process in real time, and valuable for determining the carrier density, mobility and their gradients within the film.
摘要翻译： 讨论了制造锑掺杂氧化锡（ATO）膜的方法，其中通过使用非中毒模式的反应溅射沉积膜，然后在空气环境中退火以完全氧化膜并提高电阻率和传输特性， 非中毒模式方法可以提高吞吐量。 公开了一种使用光谱椭偏仪和附加光学或物理性质的独立测量的方法，其导致对膜的各种光学和物理性质的显着改进的预测，使得该方法使得光谱椭圆偏振值对于监测和控制 过程，并且对于确定电影中的载流子密度，迁移率及其梯度是有价值的。
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10.发明授权Low-E panels with ternary metal oxide dielectric layer and method for forming the same 有权具有三元金属氧化物介电层的低E面板及其形成方法公开(公告)号：US09045363B2
公开(公告)日：2015-06-02
申请号：US13338018
申请日：2011-12-27
申请人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
发明人： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Hien Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
CPC分类号： C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/21 , C03C2217/228 , C03C2217/23 , C03C2217/26 , C03C2217/281
摘要： Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
摘要翻译： 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧化物层。 金属氧化物层包括第一元件，第二元件和第三元件。 在透明基板上形成反射层。 第一元素可以包括锡或锌。 第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。 金属氧化物层也可以包括氮。
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