公开(公告)号：US5824365A

公开(公告)日：1998-10-20

申请号：US668855

申请日：1996-06-24

Applicant: Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

IPC: C23C16/44 ,  B05D7/22 ,  C23C16/00

CPC classification number: C23C16/4404

Abstract: A method of inhibiting deposition of material on a wall of a chemical vapor deposition reactor includes providing a chemical vapor deposition reactor having a wall which has an inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber; forming a first material atop the inside facing surface; positioning a substrate in the chemical vapor deposition reactor chamber, the substrate having an outer surface; and chemical vapor depositing a second material layer on the substrate in a manner which is selective to the substrate outer surface, and not the first material, thereby restricting deposition of the second layer on the reactor inside facing surface.

Abstract translation: 一种抑制材料沉积在化学气相沉积反应器的壁上的方法包括提供具有壁的化学气相沉积反应器，所述壁具有面向内的表面，所述内表面至少部分地限定化学气相沉积反应室; 在面向内表面的顶部形成第一材料; 将衬底定位在化学气相沉积反应器室中，所述衬底具有外表面; 以及以对衬底外表面有选择性的方式在衬底上沉积第二材料层，而不是第一材料，由此限制第二层在反应器面对表面上的沉积。

公开(公告)号：US5377429A

公开(公告)日：1995-01-03

申请号：US49565

申请日：1993-04-19

Applicant: Gurtej S. Sandhu ,  Scott G. Meikle ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Scott G. Meikle ,  Donald L. Westmoreland

IPC: B01D7/00 ,  C23C16/448 ,  F26B13/30

CPC classification number: C23C16/4481 ,  B01D7/00

Abstract: An improved method and apparatus are provided for subliming solid precursors, and especially organometallic precursors, for use in a chemical vapor deposition (CVD) process. The sublimation apparatus includes a sealed vessel having a vacuum chamber. A quantity of the solid precursor is mixed with a loosely packed particulate material, such as ceramic beads, placed within the vacuum chamber. The vacuum chamber and particulate material are heated. A supply of a carrier gas is directed through the particulate material (particularly through pockets formed in the particulate material) to sublime the precursor which coats the individual particles of particulate material. By agitating the particulate material, a relatively constant sublimation area is maintained. Agitation of the particulate material may be with a mechanical stirrer or by directing an a.c. field through a piezoelectric particulate material.

Abstract translation: 提供改进的方法和装置，用于升华用于化学气相沉积（CVD）工艺中的固体前体，特别是有机金属前体。 升华装置包括具有真空室的密封容器。 将一定量的固体前体与放置在真空室内的松散填充的颗粒材料（例如陶瓷珠）混合。 真空室和颗粒材料被加热。 载体气体的供应通过颗粒材料（特别是通过形成在颗粒材料中的凹穴）引导，以使涂覆颗粒材料的各个颗粒的前体升华。 通过搅拌颗粒材料，维持相对恒定的升华区域。 颗粒材料的搅拌可以用机械搅拌器或通过引导a.c. 通过压电颗粒材料。

公开(公告)号：US07371263B2

公开(公告)日：2008-05-13

申请号：US11387660

申请日：2006-03-23

Applicant: Gurtej S. Sandhu ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide layer. The interhalogen compound may form volatile by-product gases upon reaction with the oxide layer. Unreacted interhalogen compound and volatile by-product gases may then be removed from the reaction chamber.

Abstract translation: 从制品中去除氧化物层的方法。 该制品可以位于反应室中，与该氧化物层反应的卤间化合物被引入该反应室中。 可以改变反应室的温度以除去氧化物层。 当与氧化物层反应时，卤间化合物可以形成挥发性副产物气体。 然后可以从反应室中除去未反应的卤间化合物和挥发性副产物气体。

公开(公告)号：US07033946B2

公开(公告)日：2006-04-25

申请号：US10309467

申请日：2002-12-04

Applicant: Gurtej S. Sandhu ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide layer. The interhalogen compound may form volatile by-product gases upon reaction with the oxide layer. Unreacted interhalogen compound and volatile by-product gases may then be removed from the reaction chamber.

公开(公告)号：US06503842B2

公开(公告)日：2003-01-07

申请号：US09229079

申请日：1999-01-12

Applicant: Gurtej S. Sandhu ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland

IPC: H01L21302

CPC classification number: H01L21/02063 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method of removing an oxide layer from an article. The article is located in a reaction chamber. An interhalogen compound reactive with the oxide layer is introduced into the reaction chamber. The interhalogen compound forms volatile by-product gases upon reaction with the oxide layer. For compounds the form volatile chlorides, bromides or iodides, a reducing gas, such as for example hydrogen, ammonia, amines, phosphine, silanes; and higher silanes, may optionally be added simultaneously with the interhalogen to form a volatile by-product. Unreacted interhalogen compound and volatile by-product gases are removed from the reaction chamber. In one embodiment, the temperature in the reaction chamber may be elevated prior to or after introducing the interhalogen compound. In another embodiment, a metal layer is deposited in-situ on a portion of the article within the reaction chamber.

Abstract translation: 从制品中去除氧化物层的方法。 该物品位于反应室中。 将与氧化物层反应的卤间化合物引入反应室。 卤代化合物与氧化物层反应形成挥发性副产物气体。 对于化合物，形成挥发性氯化物，溴化物或碘化物，还原气体，例如氢气，氨气，胺，膦，硅烷; 和高级硅烷可以任选地与间卤素同时加入以形成挥发性副产物。 从反应室中除去未反应的卤间化合物和挥发性副产物气体。 在一个实施方案中，反应室内的温度可以在引入卤间化合物之前或之后升高。 在另一个实施例中，金属层原位沉积在反应室内物品的一部分上。

公开(公告)号：US06428623B2

公开(公告)日：2002-08-06

申请号：US09097489

申请日：1998-06-15

Applicant: Donald L. Westmoreland ,  Gurtej S. Sandhu

Inventor： Donald L. Westmoreland ,  Gurtej S. Sandhu

IPC: C23C16455

CPC classification number: C23C16/4485

Abstract: The invention is a method directed to the use of a nonvolatile precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the invention the nonvolatile precursor is dissolved in a solvent. The choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature and that can be liquified by a combination of pressure and cooling. The solution thus formed is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. In CVD the solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited as a thin film on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film on the wafer surface.

Abstract translation: 本发明是一种涉及使用适用于半导体膜的化学气相沉积（CVD）（包括液体源CVD（LSCVD））的非挥发性前体，即固体前体或液体前体的方法。 使用本发明的方法，将非挥发性前体溶解在溶剂中。 溶剂的选择通常是在室温下具有中等至高蒸气压的无机化合物，并且可以通过压力和冷却的组合液化。 然后将如此形成的溶液在升高的压力和/或降低的温度下输送到CVD室。 在CVD中，溶液在进入CVD室时在更高的温度和更低的压力下蒸发，并且处于气态的非挥发性前体与气体反应物一起产生在半导体晶片上作为薄膜沉积的产物 。 在LSCVD中，液体进入腔室，接触晶片，蒸发，产生在晶片表面上作为薄膜沉积的产品。

公开(公告)号：US06201219B1

公开(公告)日：2001-03-13

申请号：US09030309

申请日：1998-02-25

Applicant: Gurtej S. Sandhu ,  Ravi T. Iyer ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Ravi T. Iyer ,  Donald L. Westmoreland

IPC: F27B514

CPC classification number: F27D25/00 ,  C23C14/564 ,  C23C16/4405 ,  C30B25/08 ,  F27D2099/003 ,  Y10S438/905

Abstract: A modified processing chamber is disclosed and a process for selectively cleaning the processing chamber by applying energy in a temperature pattern to surfaces of the processing chamber which receive deposits as a result of prior operations conducted within the processing chamber. The processing chamber is cleaned by ion bombardment with heat driven plasma cleaning which is selective to the heated portions of the processing chamber. Also disclosed are various embodiments for applying the temperature pattern to surfaces of the processing chamber, including the use of combustion flames or heat lamps which are positioned to heat surfaces which are to be cleaned. Another embodiment comprises the use of heating elements embedded in the surfaces to be cleaned, and yet another embodiment comprises a susceptor which is heated and radiates heat onto the surfaces to be cleaned.

Abstract translation: 公开了一种改进的处理室，以及用于通过以温度图案向能够在处理室内进行的先前操作而接收沉积物的处理室的表面施加能量来选择性地清洁处理室的过程。 处理室通过离子轰击进行清洗，其中热驱动等离子体清洗对处理室的加热部分是选择性的。 还公开了用于将温度图案施加到处理室的表面的各种实施例，包括使用燃烧火焰或加热灯，其被定位成加热待清洁的表面。 另一个实施例包括使用嵌入待清洁的表面中的加热元件，并且另一个实施例包括加热并将热量散发到要清洁的表面上的基座。

公开(公告)号：US5368687A

公开(公告)日：1994-11-29

申请号：US31572

申请日：1993-03-15

Applicant: Gurtej S. Sandhu ,  Donald L. Westmoreland ,  Pierre Fazan

Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland ,  Pierre Fazan

IPC: C04B35/01 ,  H01L21/311 ,  H01L21/00

CPC classification number: H01L21/31116 ,  C04B35/01 ,  H01L21/31122

Abstract: In one aspect of the invention, a semiconductor processing method includes the following steps: a) providing a layer of an insulating inorganic metal oxide material atop a semiconductor wafer; b) subjecting the wafer with exposed insulating inorganic metal oxide material to dry etching conditions using a halogen or pseudohalogen based chemistry to react the insulating inorganic metal oxide material into solid halogenated or pseudohalogenated material; and c) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and to form a gaseous halogenated or pseudohalogenated species which are expelled from the wafer. In another aspect, a semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer includes the following steps: a) subjecting a semiconductor wafer having exposed metal to a dry halogen or pseudohalogen gas to react the metal into solid halogenated or pseudohalogenated material; and b) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, and to form a gaseous halogenated or pseudohalogenated species, the complex and species being expelled from the wafer. Alternately, the metal is directly incorporated with the gaseous organic ligand precursor without previous halogenation.

Abstract translation: 在本发明的一个方面，一种半导体处理方法包括以下步骤：a）在半导体晶片的顶部设置绝缘无机金属氧化物层; b）使用暴露的绝缘无机金属氧化物材料的晶片对干蚀刻条件进行干燥，使用卤素或基于假卤素的化学反应将绝缘无机金属氧化物材料反应成固体卤化或假卤化材料; 和c）使固体卤化或假卤素材料与气态有机配体前体反应，形成掺入有机配体前体的气态金属有机配位络合物，并形成从晶片排出的气态卤化或假卤化物质。 另一方面，从半导体晶片去除或以其他方式清除金属的半导体处理方法包括以下步骤：a）使具有暴露金属的半导体晶片经干卤素或拟卤素气体使金属反应成固体卤化或假卤素材料; 和b）使固体卤化或假卤素材料与气态有机配体前体反应，形成结合有机配体前体和金属的气态金属有机配位络合物，并形成气态卤化或假卤化物质，复合物和物质从 晶圆。 或者，金属直接与气态有机配体前体结合，而无需先前的卤化。

公开(公告)号：US6162499A

公开(公告)日：2000-12-19

申请号：US144484

申请日：1998-08-31

Applicant: Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

Inventor： Gurtej S. Sandhu ,  Ravi Iyer ,  Donald L. Westmoreland

IPC: C23C16/44 ,  B05D7/22 ,  C23C16/00

CPC classification number: C23C16/4404

Abstract: A method of inhibiting deposition of material on a wall of a chemical vapor deposition reactor includes providing a chemical vapor deposition reactor having a wall which has an inside facing surface, the inside facing surface at least partially defining a chemical vapor deposition reactor chamber; forming a first material atop the inside facing surface; positioning a substrate in the chemical vapor deposition a reactor chamber, the substrate having an outer surface; and chemical vapor depositing a second material layer on the substrate in a manner which is selective to the substrate outer surface, and not the first material, thereby restricting deposition of the second layer on the reactor inside facing surface.

Abstract translation: 一种抑制材料沉积在化学气相沉积反应器的壁上的方法包括提供具有壁的化学气相沉积反应器，所述壁具有面向内的表面，所述内表面至少部分地限定化学气相沉积反应室; 在面向内表面的顶部形成第一材料; 将基板定位在化学气相沉积中的反应室，所述基板具有外表面; 以及以对衬底外表面有选择性的方式在衬底上沉积第二材料层，而不是第一材料，由此限制第二层在反应器面对表面上的沉积。

公开(公告)号：US07182979B2

公开(公告)日：2007-02-27

申请号：US10213030

申请日：2002-08-05

Applicant: Donald L. Westmoreland ,  Gurtej S. Sandhu

Inventor： Donald L. Westmoreland ,  Gurtej S. Sandhu

IPC: C23C16/00 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/4485

Abstract: A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature, which can be liquified by combination of pressure and cooling. The solution is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. The solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film.

Abstract translation: 涉及使用非挥发性前体，即适用于CVD的固体或液体前体，包括液体源CVD（LSCVD）的方法。 使用本发明的方法，将非挥发性前体溶解在溶剂中。 溶剂的选择通常是在室温下具有中等至高蒸气压的无机化合物，其可以通过压力和冷却的组合而液化。 然后将溶液在升高的压力和/或降低的温度下运送到CVD室。 该溶液在进入CVD室时在更高的温度和更低的压力下蒸发，并且处于其气态的非挥发性前体与气体反应物一起产生沉积在半导体晶片上的产物。 在LSCVD中，液体进入室，接触晶片，蒸发，产生沉积成薄膜的产品。