公开(公告)号：US4528082A

公开(公告)日：1985-07-09

申请号：US535901

申请日：1983-09-26

申请人： Theodore D. Moustakas ,  H. Paul Maruska

发明人： Theodore D. Moustakas ,  H. Paul Maruska

IPC分类号： H01L31/04 ,  H01L21/203 ,  H01L29/04 ,  H01L29/868 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20 ,  C23C15/00 ,  H01L31/18

CPC分类号： H01L31/202 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/868 ,  H01L31/03921 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

摘要： A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

摘要翻译： 具有部分结晶（微晶）P和N层的高效非晶硅PIN半导体器件通过N，I和P层和至少一个半透明欧姆电极的顺序溅射而构成。 构造的方法产生PIN装置，显示出增强的电气和光学性能，改善的物理完整性，并且有助于在单一真空系统和真空泵下降过程中的制备。

公开(公告)号：US5998232A

公开(公告)日：1999-12-07

申请号：US231689

申请日：1999-01-14

申请人： H. Paul Maruska

发明人： H. Paul Maruska

IPC分类号： H01L33/32 ,  H01S5/02 ,  H01S5/022 ,  H01S5/323 ,  H01S5/42 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L2224/16225 ,  H01L33/32 ,  H01S5/02216 ,  H01S5/0224 ,  H01S5/3063 ,  H01S5/32341

摘要： The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip bonding to be used for efficient heat removal, yielding much brighter LEDs and more powerful lasers.

摘要翻译： 本发明涉及利用离子注入来改进制造氮化物发光和激光二极管的制造工艺的新型平面技术方法。 简化的处理显着降低了制造这些器件的成本，并允许倒装芯片接合用于有效的散热，产生更明亮的LED和更强大的激光器。

公开(公告)号：US5272355A

公开(公告)日：1993-12-21

申请号：US886024

申请日：1992-05-20

申请人： Fereydoon Namavar ,  Nader M. Kalkhoran ,  H. Paul Maruska

发明人： Fereydoon Namavar ,  Nader M. Kalkhoran ,  H. Paul Maruska

IPC分类号： H01L33/00 ,  H01L33/34 ,  H01L45/00

CPC分类号： H01L33/346 ,  H01L33/002

摘要： A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and information transfer, via optical means, between IC's, PC boards and displays in a computer. The method essentially includes electrochemically etching a silicon wafer to form a porous silicon region therein, depositing a transparent semiconductor layer on the porous silicon region, and forming a back contact on the wafer.

摘要翻译： 公开了一种固态光电开关和显示装置及其制造方法。 在硅中形成的器件基本上是表面发射的可见光发光二极管，其允许通过光学装置在IC，PC板和计算机中的显示器之间快速且有效的切换和信息传输。 该方法基本上包括电化学蚀刻硅晶片以在其中形成多孔硅区域，在多孔硅区域上沉积透明半导体层，并在晶片上形成背接触。

公开(公告)号：US5620439A

公开(公告)日：1997-04-15

申请号：US468474

申请日：1995-06-06

申请人： George S. Abela ,  H. Paul Maruska

发明人： George S. Abela ,  H. Paul Maruska

IPC分类号： A61B17/00 ,  A61B18/24 ,  A61M1/00 ,  A61B17/36

CPC分类号： A61B18/24 ,  A61B2017/00247 ,  A61B2018/00392

摘要： A laser treatment device provides an output operating laser beam having a single wavelength which is highly absorbed by tissue of a patient and which beam is non-diverging. The laser treatment device may be a catheter which is inserted into a patient for performing endovascular myocardial revascularization (i.e., creating new channels for blood flow from within the interior of the patient's heart). The use of the highly absorbed wavelength and the non-diverging character of the beam are possible by having a distal laser at a distal end of the catheter. The distal laser is pumped by a source of laser energy supplied by an array of diode lasers and passed along an optical fiber from a proximal end of the catheter.

摘要翻译： 激光治疗装置提供具有单个波长的输出操作激光束，其被患者的组织高度吸收，并且哪个束是非发散的。 激光治疗装置可以是插入到患者中以用于进行血管内心肌血运重建的导管（即，从患者心脏的内部产生血流的新通道）。 通过在导管的远端具有远端激光，可以使用高度吸收的波长和光束的非发散特性。 远端激光器被由二极管激光器阵列提供的激光能量源泵送，并从导管的近端沿着光纤传播。

公开(公告)号：US06432788B1

公开(公告)日：2002-08-13

申请号：US09624375

申请日：2000-07-24

申请人： H. Paul Maruska ,  Stephen N. Bunker

发明人： H. Paul Maruska ,  Stephen N. Bunker

IPC分类号： H01L218222

CPC分类号： H01L29/66318 ,  H01L29/2003 ,  H01L29/7371

摘要： The present invention comprises methods for producing semiconductor devices useful in high temperature applications. The invention is based on using silicon ion implantation to convert a portion of the p-type base layer of magnesium-doped GaN into n-type GaN. The boundary of the n-type GaN within the p-type layer then becomes an n-p diode junction which can function as the emitter-base junction. The present methods utilize ion implantation to convert a portion of the p-type layer to n-type thereby forming an n-p junction having desirable diode characteristics. The invention also includes BJT and HBT devices incorporating the present implanted n-p diode junctions.

摘要翻译： 本发明包括用于制造在高温应用中有用的半导体器件的方法。 本发明基于使用硅离子注入将镁掺杂GaN的p型基极层的一部分转换为n型GaN。 p型层内的n型GaN的边界然后变成可用作发射极 - 基极结的n-p二极管结。 本方法利用离子注入将p型层的一部分转换为n型，从而形成具有所需二极管特性的n-p结。 本发明还包括结合了本植入的n-p二极管结的BJT和HBT器件。

公开(公告)号：US06284395B1

公开(公告)日：2001-09-04

申请号：US09295423

申请日：1999-04-20

申请人： H. Paul Maruska ,  Long De Zhu ,  Peter E. Norris

发明人： H. Paul Maruska ,  Long De Zhu ,  Peter E. Norris

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  G02F1/3556 ,  H01L33/32

摘要： A single crystal thin film of the compound ZnSiXGe1-XN2 (where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate or silicon with or without an additional GaN buffer layer grown on them. Alternately, a GaN single crystal thin film grown on any substrate can be used. In the case of sapphire, it can be R-plane so that the thin film has its c-axis lying within the thin film or A- or C-plane so that the thin film has its c-axis perpendicular to the substrate. The substrate could also be any substrate with a GaN single crystal thin film deposited on it. ZnSiXGe1-XN2 single crystal thin films can be made by the MOCVD method using suitable precursors, molar injection ratios, and substrate temperatures. It is possible to make various optical, electro-optical or electronic devices with the material, for example, a second harmonic generator emitting blue light.

摘要翻译： 化合物ZnSiXGe1-XN2的单晶薄膜（其中x可以为0至1）。 该薄膜单晶可以设置在由例如蓝宝石，碳化硅，没食子酸镓或硅制成的单晶衬底上，或者在其上生长有附加的GaN缓冲层。 或者，可以使用在任何基板上生长的GaN单晶薄膜。 在蓝宝石的情况下，其可以是R平面，使得薄膜的c轴位于薄膜或A-或C平面内，使得薄膜的c轴垂直于基底。 衬底也可以是沉积有GaN单晶薄膜的任何衬底。 ZnSiXGe1-XN2单晶薄膜可以通过MOCVD法使用合适的前体，摩尔注入比和基底温度来制备。 可以使用材料例如发射蓝光的二次谐波发生器来制造各种光学，电光或电子装置。

公开(公告)号：US5452118A

公开(公告)日：1995-09-19

申请号：US49842

申请日：1993-04-20

申请人： H. Paul Maruska

发明人： H. Paul Maruska

IPC分类号： G02B6/12 ,  H04B10/60 ,  H04B10/64 ,  H04B10/06

CPC分类号： H04B10/60 ,  G02B6/12004 ,  H04B10/64

摘要： A monolithic integrated optical heterodyne receiver circuit formed on a single chip and a process of its manufacture are disclosed. The heterodyne receiver circuit essentially includes a tunable local oscillator formed on a substrate for generating a first light beam, a first waveguide coplanarly formed on the substrate adjacent to the local oscillator for transmitting the first light beam, a second waveguide formed on top of the first waveguide for receiving and transmitting an information-encoded second light beam, a coupler region sandwiched between the first and second waveguides for mixing the two light beams, and a pair of detectors mounted in electrical series with one another for converting the mixed light beams to a radio frequency signal operating at an intermediate frequency.

摘要翻译： 公开了在单个芯片上形成的单片集成光学外差接收电路及其制造方法。 外差接收电路基本上包括形成在基板上用于产生第一光束的可调谐本地振荡器，与基板相邻共面形成的第一波导，用于传输第一光束，第二波导形成在第一光束的顶部 用于接收和发送信息编码的第二光束的波导，夹在第一和第二波导之间的用于混合两个光束的耦合器区域和彼此电连接的一对检测器，用于将混合光束转换成 射频信号在中频工作。

公开(公告)号：US4508609A

公开(公告)日：1985-04-02

申请号：US535902

申请日：1983-09-26

申请人： Theodore D. Moustakas ,  H. Paul Maruska

发明人： Theodore D. Moustakas ,  H. Paul Maruska

IPC分类号： H01L31/04 ,  C23C14/14 ,  H01L21/203 ,  H01L29/04 ,  H01L29/861 ,  H01L29/868 ,  C23C15/00 ,  H01L31/18

CPC分类号： C23C14/14 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/868

摘要： A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

摘要翻译： 硅PIN微晶/非晶硅半导体器件通过从掺杂硅的靶溅射N和P层硅，并且从未掺杂的靶溅射I层和至少一个半透明欧姆电极来构造。