公开(公告)号：US20230405725A1

公开(公告)日：2023-12-21

申请号：US18208432

申请日：2023-06-12

Applicant: HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Daisuke KAWAGUCHI ,  Atsushi TANAKA ,  Toshiki YUI ,  Tomomi ARATANI

IPC: B23K26/364 ,  H01L21/78 ,  H01L21/268

CPC classification number: B23K26/364 ,  H01L21/78 ,  H01L21/268

Abstract: A laser processing method includes: a forming step of forming a plurality of modified spots along an imaginary plane inside a work piece by irradiating an inside of the work piece with laser light from a surface. The work piece includes a first region and second region when viewed in a direction perpendicular to the surface. In the forming step, a plurality of modified spot rows formed of the plurality of modified spots arranged along a boundary between the first region and the second region are formed in the second region, the plurality of modified spot rows being arranged along a direction intersecting an arrangement direction of the plurality of modified spots, and a crack extending from the second region to the first region is formed by forming the plurality of modified spot rows.

公开(公告)号：US20210327710A1

公开(公告)日：2021-10-21

申请号：US17229141

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Chiaki SASAOKA ,  Jun KOJIMA ,  Shoichi ONDA ,  Masatake NAGAYA ,  Kazukuni HARA ,  Daisuke KAWAGUCHI

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/45 ,  H01L21/306 ,  H01L29/40

Abstract: A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

公开(公告)号：US20160045979A1

公开(公告)日：2016-02-18

申请号：US14778673

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI ,  Tsubasa HIROSE ,  Keisuke ARAKI

IPC: B23K26/00 ,  B23K26/53 ,  B23K26/06

CPC classification number: B23K26/0057 ,  B23K26/0617 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0736 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/00 ,  C03B33/0222 ,  Y02P40/57

Abstract: A laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. A plurality of rows of modified regions include at least an entrance-surface-side modified region located on the laser light entrance surface side, an opposite-surface-side modified region located on the opposite surface side of the laser light entrance surface, and a middle modified region located between the entrance-surface-side modified region and opposite-surface-side modified region. When forming the middle modified region, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction. When forming the entrance-surface-side modified region and opposite-surface-side modified region, the spatial light modulator is restrained from displaying the axicon lens pattern as the modulation pattern.

Abstract translation: 激光加工装置包括发射激光的激光光源，调制从激光光源发出的激光的空间光调制器，以及将由空间光调制器调制的激光会聚在物体处的会聚光学系统。 多列修改区域至少包括位于激光入射面侧的入射面侧改质区域，位于激光入射面的相对面侧的相对面侧改质区域，以及 位于入口表面侧改质区域和反面侧改性区域之间的中间改质区域。 当形成中间改变区域时，空间光调制器将旋转透镜图案显示为调制图案，以便沿着激光照射方向彼此靠近并置的多个位置处形成会聚点。 当形成入射表面侧改质区域和反面侧改性区域时，抑制空间光调制器显示作为调制图案的旋转透镜图案。

公开(公告)号：US20160167355A1

公开(公告)日：2016-06-16

申请号：US15051038

申请日：2016-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hideki SHIMOI ,  Naoki UCHIYAMA ,  Daisuke KAWAGUCHI

IPC: B32B37/06 ,  B32B38/00

CPC classification number: B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract translation: 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

公开(公告)号：US20160052088A1

公开(公告)日：2016-02-25

申请号：US14778766

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI ,  Makoto NAKANO ,  Ryota SUGIO ,  Tsubasa HIROSE ,  Keisuke ARAKI

IPC: B23K26/0622 ,  B23K26/06 ,  B23K26/53 ,  B23K26/00

CPC classification number: B23K26/0624 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0853 ,  B23K26/53 ,  B23K2103/52 ,  B23K2103/54 ,  B23K2103/56

Abstract: A laser processing device forms a modified region in an object to be processed by converging ultrashort pulse laser light at the object and comprises a laser light source emitting the laser light, a converging optical system converging the laser light emitted from the laser light source at the object, and an aberration providing part imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

Abstract translation: 激光加工装置通过在物体上会聚超短脉冲激光来形成待处理物体中的改质区域，并且包括发射激光的激光光源，会聚光学系统，将从激光源射出的激光会聚在 物体和通过会聚光学系统对会聚于物体的激光赋予像差的像差提供部。 在激光的光轴方向上，通过使参考像差范围成为会聚诱发像差的范围，作为在激光会聚在激光的对象的位置处发生的像差， 像差提供部分给激光赋予第一像差，使得激光具有比光轴方向上的参考像差范围更长的细长范围，作为像差范围，并且在光轴方向上的强度分布与连续起伏 伸长范围。

公开(公告)号：US20160052083A1

公开(公告)日：2016-02-25

申请号：US14778619

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI ,  Tsubasa HIROSE ,  Keisuke ARAKI

IPC: B23K26/00 ,  B23K26/067 ,  B23K26/53 ,  B23K26/06

CPC classification number: B23K26/0057 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50 ,  B23K2103/54 ,  C03B33/0222 ,  C03B33/07 ,  H01L21/78 ,  Y02P40/57

Abstract: A laser processing device converges laser light at an object to be processed having a silicon part containing silicon mounted on a glass part containing glass with a resin part interposed therebetween so as to form a modified region within the object along a line to cut. The laser processing device comprises a laser light source emitting the laser light, a spatial light modulator modulating the laser light emitted from the laser light source, and a converging optical system converging the laser light modulated by the spatial light modulator at the object. When forming the modified region in the glass part, the spatial light modulator displays an axicon lens pattern as a modulation pattern so as to form converging points at a plurality of positions juxtaposed close to each other along a laser light irradiation direction.

Abstract translation: 激光加工装置将激光在同时具有硅树脂部分的硅玻璃部分上装载有含有硅部分的待处理物体，其中树脂部分插入其间，沿着切割线在物体内形成改质区域。 激光加工装置包括发射激光的激光光源，调制从激光光源发射的激光的空间光调制器，以及将由空间光调制器调制的激光会聚在物体处的会聚光学系统。 当在玻璃部分中形成改质区域时，空间光调制器将旋转透镜图案显示为调制图案，以便在激光照射方向上彼此靠近并列的多个位置处形成会聚点。

公开(公告)号：US20210327702A1

公开(公告)日：2021-10-21

申请号：US17229356

申请日：2021-04-13

Applicant: DENSO CORPORATION ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Jun KOJIMA ,  Chiaki SASAOKA ,  Shoichi ONDA ,  Masatake NAGAYA ,  Kazukuni HARA ,  Daisuke KAWAGUCHI

IPC: H01L21/02

Abstract: A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

公开(公告)号：US20160052084A1

公开(公告)日：2016-02-25

申请号：US14778621

申请日：2014-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI ,  Makoto NAKANO ,  Ryota SUGIO ,  Tsubasa HIROSE ,  Keisuke ARAKI

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/53 ,  B23K26/064

CPC classification number: B23K26/0624 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0853 ,  B23K26/53 ,  B23K2103/52 ,  B23K2103/54 ,  B23K2103/56

Abstract: The laser processing device comprises a laser light source emitting a laser light, a converging optical system converging the laser light at an object to be processed, and an aberration providing part for imparting an aberration to the laser light converged at the object by the converging optical system. In an optical axis direction of the laser light, letting a reference aberration range be a range of a converging-induced aberration as an aberration occurring at a position where the laser light is converged as a result of converging the laser light at the object, the aberration providing part imparts a first aberration to the laser light such that the laser light has an elongated range longer than the reference aberration range in the optical axis direction as an aberration range and an intensity distribution in the optical axis direction with a continuous undulation in the elongated range.

Abstract translation: 激光加工装置包括发射激光的激光光源，将激光会聚在待处理对象的会聚光学系统，以及用于通过会聚光学会聚在物体上的激光赋予像差的像差提供部 系统。 在激光的光轴方向上，通过使参考像差范围成为会聚诱发像差的范围，作为在激光会聚在激光的对象的位置处发生的像差， 像差提供部分给激光赋予第一像差，使得激光具有比光轴方向上的参考像差范围更长的细长范围，作为像差范围，并且在光轴方向上的强度分布与连续起伏 伸长范围。

公开(公告)号：US20160039044A1

公开(公告)日：2016-02-11

申请号：US14779652

申请日：2014-03-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daisuke KAWAGUCHI

IPC: B23K26/00 ,  B23K26/57 ,  B23K26/364

CPC classification number: B23K26/0063 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2103/56 ,  C03B33/0222 ,  C03B33/076

Abstract: It comprises a first step of preparing an object; a second step of forming a modified region in a first member along a line by irradiating the first member with laser light while using a front face of the object as a laser light entrance surface; a third step of forming a processing scar in a bonding layer along the line by irradiating the bonding layer with laser light while using the front face as a laser light entrance surface; and a fourth step, after the first to third steps, of forming a modified region in a second member along the line by irradiating the second member with laser light while using a rear face of the object as a laser light entrance surface; the fourth step uses the processing scar as a reference for alignment of a laser light irradiation position with respect to the second member.

Abstract translation: 它包括准备物体的第一步骤; 第二步骤，当使用所述物体的前表面作为激光入射表面时，通过用激光照射所述第一构件，沿着线形成修改区域; 第三步骤，当使用所述前面作为激光入射面时，通过用激光照射所述接合层，沿着所述接合层形成加工痕迹; 以及第四步骤，在第一至第三步骤之后，在使用物体的后表面作为激光入射表面的同时，用激光照射第二部件，沿着第二部件形成改质区域; 第四步骤使用加工疤痕作为激光照射位置相对于第二构件的对准的参考。

公开(公告)号：US20230160104A1

公开(公告)日：2023-05-25

申请号：US17988379

申请日：2022-11-16

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  HAMAMATSU PHOTONICS K.K. ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Junji OHARA ,  Takashi ISHIDA ,  Yoshitaka NAGASATO ,  Daisuke KAWAGUCHI ,  Chiaki SASAOKA ,  Shoichi ONDA ,  Jun KOJIMA

IPC: C30B33/04 ,  H01L21/268 ,  H01L21/78 ,  B23K26/382 ,  C30B29/40 ,  C30B25/20

CPC classification number: C30B33/04 ,  H01L21/268 ,  H01L21/7806 ,  B23K26/382 ,  C30B29/406 ,  C30B25/20

Abstract: A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side: and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.