公开(公告)号：US11921081B2

公开(公告)日：2024-03-05

申请号：US17255014

申请日：2019-05-27

申请人： HAMAMATSU PHOTONICS K.K. ,  National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY

发明人： Toshiki Wakamori ,  Shinichi Nakahigashi ,  Kazuaki Sawada

IPC分类号： G01N27/414 ,  G01N33/00

CPC分类号： G01N27/4141 ,  G01N33/0031

摘要： A smell sensor includes an ion sensor in which a sensing section provided with a sensitive film configured to change a potential in accordance with a state of a measurement target is formed on a semiconductor substrate; a substance adsorption film disposed on the sensitive film and configured to change the state with adsorption of a smell substance; and a reference electrode configured to apply a reference voltage to the substance adsorption film. The reference electrode is disposed to be separated from the sensitive film and not to overlap the sensing section when viewed in a thickness direction of the semiconductor substrate.

公开(公告)号：US09915629B2

公开(公告)日：2018-03-13

申请号：US14758156

申请日：2014-01-07

申请人： National University Corporation Toyohashi University of Technology

发明人： Fumihiro Dasai ,  Kazuaki Sawada ,  Masato Futagawa

IPC分类号： G01N27/30 ,  G01N27/416 ,  G01N27/414

CPC分类号： G01N27/302 ,  G01N27/4145 ,  G01N27/4165 ,  G01N27/4167

摘要： The purpose of the present invention is to measure pH of a sample with high accuracy in a pH sensor array, without the use of a glass reference electrode. Each time that a sample is measured, the potential Vrm of the sample is identified, and the identified potential Vrm is used to calculate the pH. The outputs Voi1 and Voi2 of a first element and a second element located near one another in a sensor array are represented as follows. Voi1=Si1×pHi1+Gi1×Vrm+Ci1, Voi2=Si2×pHi2+Gi2×Vrm+Ci2. Voi is the output of the element, Si and Gi are sensitivity coefficients, and Ci is a constant, these values having been derived in advance. Here, where the potential Vrm is constant, and the elements located near one another are presumed to be at equal pH (pHi1=pHi2), the potential Vrm is identified by solving a linear equation with two unknowns.

公开(公告)号：US10073052B2

公开(公告)日：2018-09-11

申请号：US15372693

申请日：2016-12-08

申请人： Sharp Kabushiki Kaisha ,  National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY

发明人： Kenichi Nagai ,  Satoshi Saitoh ,  Kazuaki Sawada

IPC分类号： G01N27/02 ,  G01N27/414 ,  G01N27/416 ,  G01N31/02 ,  G01N27/42 ,  G01N30/64 ,  G01N30/34

CPC分类号： G01N27/4145 ,  G01N27/4148 ,  G01N27/4162 ,  G01N27/42 ,  G01N31/02 ,  G01N2030/345 ,  G01N2030/645

摘要： Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.

公开(公告)号：US10031101B2

公开(公告)日：2018-07-24

申请号：US14885240

申请日：2015-10-16

申请人： Sharp Kabushiki Kaisha ,  National University Corporation Toyohashi University of Technology

发明人： Satoshi Saitoh ,  Toshio Yoshida ,  Tomohiro Konishi ,  Kazuaki Sawada

IPC分类号： G01N27/414

摘要： An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

公开(公告)号：US09689837B2

公开(公告)日：2017-06-27

申请号：US14419453

申请日：2013-08-09

申请人： National University Corporation Toyohashi University of Technology

发明人： Masato Futagawa ,  Kazuaki Sawada ,  Sou Takahashi

IPC分类号： G01N27/403 ,  G01N27/416 ,  H01L29/40 ,  H01L29/73 ,  H01L29/423 ,  H01L29/735 ,  H01L29/10 ,  H01L29/861 ,  H01L27/06

CPC分类号： G01N27/4168 ,  H01L27/0664 ,  H01L29/1008 ,  H01L29/40 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/735 ,  H01L29/8611

摘要： Provided is a small-sized device for measuring an oxidation-reduction potential, whereby an oxidation-reduction current and an oxidation-reduction potential can be measured by reducing noise even when a signal from a solution being measured is small. A device for measuring an oxidation-reduction potential is provided with a substrate (10), a working electrode (15) mounted on a surface of the substrate (10), and a bipolar transistor (21) for amplifying the output of the working electrode (15) also provided on the surface of the substrate (10), and the signal amplified by the bipolar transistor (21) is inputted to a processing circuit (18).

公开(公告)号：US10309922B2

公开(公告)日：2019-06-04

申请号：US15555740

申请日：2016-02-19

申请人： National University Corporation Toyohashi University of Technology

发明人： Fumihiro Dasai ,  Kazuaki Sawada

IPC分类号： G01N27/00 ,  G01N27/327 ,  G01N27/414 ,  G01N33/543 ,  H01L21/768 ,  H01L23/532 ,  G01N21/00 ,  H01L29/78

摘要： Proposed is a device for detecting a chemical/physical phenomenon, in which, via a novel scheme, charges are accumulated in a charge accumulation region. An amount of charges thus accumulated reflects the potential of a sensing region and the potential corresponds to an external environment (chemical phenomenon or physical phenomenon) to be detected. A charge accumulation region 5 includes a first potential well region FD1 that is continuous with a sensing region 3, the boundary potential of the charges held in the first potential well region FD1 being made equal to the potential of the sensing region 3, whereby the potential of the sensing region 3 is made to be reflected in the amount of charges held in the first potential well region FD1.

公开(公告)号：US09976981B2

公开(公告)日：2018-05-22

申请号：US15543169

申请日：2016-01-06

申请人： National University Corporation Toyohashi University of Technology

发明人： Fumihiro Dasai ,  Kazuaki Sawada

IPC分类号： H01L29/762 ,  G01N27/414 ,  B82Y30/00

CPC分类号： G01N27/414 ,  B82Y30/00 ,  G01N27/4148

摘要： Provided is a charge-transfer-type sensor suitable for high integration while eliminating a potential barrier. A sensor provided with a semiconductor substrate 10 partitioned into a sensing region 5 in which a potential varies in corresponding fashion to a variation in the external environment, a charge input region 2 for supplying charges to the sensing region 5, an input charge control region 3 interposed between the sensing region 5 and the charge input region 2, and a charge accumulation region 7 for accumulating electric charges transported from the sensing region 5, the sensor for detecting the amount of electric charges accumulated in the charge accumulation region 7, wherein a diffusion layer 4 is formed between the input charge control region 3 and the sensing region 5 of the substrate 10, and dopants for producing charges having the same polarity as the charges supplied from the charge input region 2 are diffused in the diffusion layer 4.

公开(公告)号：US20180003671A1

公开(公告)日：2018-01-04

申请号：US15543169

申请日：2016-01-06

申请人： National University Corporation Toyohashi University of Technology

发明人： Fumihiro Dasai ,  Kazuaki Sawada

IPC分类号： G01N27/414 ,  B82Y30/00

CPC分类号： G01N27/414 ,  B82Y30/00 ,  G01N27/4148

摘要： Provided is a charge-transfer-type sensor suitable for high integration while eliminating a potential barrier. A sensor provided with a semiconductor substrate 10 partitioned into a sensing region 5 in which a potential varies in corresponding fashion to a variation in the external environment, a charge input region 2 for supplying charges to the sensing region 5, an input charge control region 3 interposed between the sensing region 5 and the charge input region 2, and a charge accumulation region 7 for accumulating electric charges transported from the sensing region 5, the sensor for detecting the amount of electric charges accumulated in the charge accumulation region 7, wherein a diffusion layer 4 is formed between the input charge control region 3 and the sensing region 5 of the substrate 10, and dopants for producing charges having the same polarity as the charges supplied from the charge input region 2 are diffused in the diffusion layer 4.

公开(公告)号：US20150355127A1

公开(公告)日：2015-12-10

申请号：US14758156

申请日：2014-01-07

申请人： NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY

发明人： Fumihiro Dasai ,  Kazuaki Sawada ,  Masato Futagawa

IPC分类号： G01N27/30 ,  G01N27/416

CPC分类号： G01N27/302 ,  G01N27/4145 ,  G01N27/4165 ,  G01N27/4167

摘要： The purpose of the present invention is to measure pH of a sample with high accuracy in a pH sensor array, without the use of a glass reference electrode. Each time that a sample is measured, the potential Vrm of the sample is identified, and the identified potential Vrm is used to calculate the pH. The outputs Voi1 and Voi2 of a first element and a second element located near one another in a sensor array are represented as follows. Voi1=Si1×pHi1+Gi1×Vrm+Ci1, Voi2=Si2×pHi2+Gi2×Vrm+Ci2. Voi is the output of the element, Si and Gi are sensitivity coefficients, and Ci is a constant, these values having been derived in advance. Here, where the potential Vrm is constant, and the elements located near one another are presumed to be at equal pH (pHi1=pHi2), the potential Vrm is identified by solving a linear equation with two unknowns.

摘要翻译： 本发明的目的是在不使用玻璃参比电极的情况下，在pH传感器阵列中以高精度测量样品的pH。 每次测量样品时，识别样品的电位Vrm，并使用识别的电位Vrm来计算pH。 如下表示传感器阵列中彼此靠近的第一元件和第二元件的输出Vo1和Vo1。 Voi1 = Si1×pHi1 + Gi1×Vrm + Ci1，Voi2 = Si2×pHi2 + Gi2×Vrm + Ci2。 Voi是元素的输出，Si和Gi是灵敏度系数，Ci是常数，这些值是事先得出的。 这里，当电位Vrm恒定时，假定彼此相邻的元素处于相同的pH（pHi1 = pHi2）时，通过求解具有两个未知数的线性方程来识别电位Vrm。

公开(公告)号：US20140233039A1

公开(公告)日：2014-08-21

申请号：US14348468

申请日：2012-09-28

申请人： National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY

发明人： Kazuhiro Takahashi ,  Kazuaki Sawada ,  Hiroki Oyama

IPC分类号： G01N21/27

CPC分类号： G01N21/27 ,  G01N21/253 ,  G01N21/45 ,  G01N2021/458 ,  G01N2021/7779

摘要： Present invention relate to a physical/chemical sensor and a physical/chemical phenomenon sensing device that can detect minute change of surface stress and can be reduced in size and arrayed and to provide a method for manufacturing the sameIn the sensor of the present invention, an air-gap 3 is formed on a surface of the light receiving surface 1a of a photodiode 1. The sensor comprises a membrane section 2 which is oppositely deposited, and the air-gap is blocked air-tightly or liquid-tightly. The membrane section has optical transparency and flexibility, the membrane section and the surface of the light receiving surface form a Fabry-Perot resonator. The sensing device of the present invention comprises a reference sensor, which comprises no air-gap, in addition to the sensor. The manufacturing method of the present invention comprises forming a sacrificial layer on the light receiving surface of the photodiode, depositing a protection layer on an area excluding a surface of the sacrificial layer, forming the membrane section on a membrane section construction area excluding a through area for etching, etching the sacrificial layer, and coating the through area for etching.

摘要翻译： 本发明涉及能够检测表面应力的微小变化并且可以减小尺寸并排列并且提供其制造方法的物理/化学传感器和物理/化学现象检测装置。在本发明的传感器中， 在光电二极管1的光接收表面1a的表面上形成气隙3.传感器包括相对沉积的膜部分2，气隙被气密地或液密地阻挡。 膜部具有光学透明性和柔性，膜部分和光接收表面形成法布里 - 珀罗共振器。 除了传感器之外，本发明的感测装置包括不包括气隙的参考传感器。 本发明的制造方法包括在光电二极管的光接收表面上形成牺牲层，在除了牺牲层的表面之外的区域上沉积保护层，在不包括通孔的膜部分结构区域上形成膜部分 用于蚀刻，蚀刻牺牲层和涂覆通孔以进行蚀刻。