公开(公告)号：US20180005906A1

公开(公告)日：2018-01-04

申请号：US15597285

申请日：2017-05-17

Applicant: HITACHI, LTD.

Inventor： Misuzu SAGAWA ,  Tetsufumi KAWAMURA

IPC: H01L21/66 ,  B81C1/00 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L22/20 ,  B81C1/00547 ,  B81C99/0025 ,  B81C99/0065 ,  B81C2201/0142 ,  H01L21/30604 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/67259

Abstract: The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.

公开(公告)号：US20190084830A1

公开(公告)日：2019-03-21

申请号：US16030256

申请日：2018-07-09

Applicant: Hitachi, Ltd.

Inventor： Misuzu SAGAWA ,  Atsushi ISOBE

IPC: B81C99/00

CPC classification number: B81C99/006 ,  B81C99/0025 ,  B81C99/0065

Abstract: In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage angle 1 setting a stage inclination angle and a stage angle 2 of the inclination angle different from the stage angle 1. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage angles 1 and 2. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angle 1 and a fourth image that is a device image acquired when the stage is set at the stage angle 2. When the three-dimensional device data is created, a correction value calculated from the stage angles 1 and 2 and the first and second images is used.

公开(公告)号：US20190062157A1

公开(公告)日：2019-02-28

申请号：US16015640

申请日：2018-06-22

Applicant: HITACHI, LTD.

Inventor： Keiji WATANABE ,  Hiroyasu SHICHI ,  Misuzu SAGAWA ,  Toshiyuki MINE ,  Daisuke RYUZAKI

IPC: B81C99/00 ,  B81C1/00 ,  H01J37/317 ,  H01J37/304 ,  H01J37/147 ,  G03F7/20

CPC classification number: B81C99/0025 ,  B81C1/00412 ,  B81C99/0065 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  G03F7/2059 ,  H01J37/1474 ,  H01J37/304 ,  H01J37/3056 ,  H01J37/3174 ,  H01J2237/28 ,  H01J2237/31749 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

公开(公告)号：US20190013179A1

公开(公告)日：2019-01-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi KAWAMURA ,  Misuzu SAGAWA ,  Kazuki WATANABE ,  Keiji WATANABE ,  Shuntaro MACHIDA ,  Nobuyuki SUGII ,  Daisuke RYUZAKI

IPC: H01J37/28 ,  H01L21/3065 ,  B81C1/00 ,  H01L21/66 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/28 ,  B81C1/00 ,  B81C2201/0132 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/30411 ,  H01J2237/31745 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L22/26

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.