公开(公告)号：US20170186587A1

公开(公告)日：2017-06-29

申请号：US15273812

申请日：2016-09-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tetsuo KAWANABE ,  Takumi TANDOU ,  Tsutomu TETSUKA ,  Naoki YASUI

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/67

CPC classification number: H01J37/32348 ,  C23C16/452 ,  C23C16/4585 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/68735

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.