公开(公告)号：US3884788A

公开(公告)日：1975-05-20

申请号：US39326573

申请日：1973-08-30

Applicant: HONEYWELL INC

Inventor： MACIOLEK RALPH B ,  SKOGMAN RICHARD A ,  SPEERSCHNEIDER CHARLES J

IPC: C30B19/04 ,  C23C15/00 ,  B44D1/14 ,  B44D1/18

CPC classification number: C30B19/04 ,  C30B29/48 ,  Y10S148/017 ,  Y10S148/051 ,  Y10S148/064 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/15 ,  Y10S148/158 ,  Y10S438/974

Abstract: Substrates suitable for epitaxial growth of mercury cadmium telluride are formed by cleaning a surface of the substrate and then depositing a thin layer of cadmium telluride on the cleaned surface.

公开(公告)号：US3902924A

公开(公告)日：1975-09-02

申请号：US39326473

申请日：1973-08-30

Applicant: HONEYWELL INC

Inventor： MACIOLEK RALPH B ,  SPEERSCHNEIDER CHARLES J

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/368 ,  H01L31/18 ,  H01L7/62

CPC classification number: H01L31/1832 ,  C30B19/04 ,  C30B19/061 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/064

Abstract: Thin layers of mercury cadmium telluride, (Hg,Cd)Te, are formed by liquid phase epitaxy.

Abstract translation: 通过液相外延形成薄层的碲化镉汞汞（Hg，Cd）Te。

公开(公告)号：US3297417A

公开(公告)日：1967-01-10

申请号：US35490464

申请日：1964-03-26

Applicant: HONEYWELL INC

Inventor： SPEERSCHNEIDER CHARLES J

IPC: C23C26/00

CPC classification number: C23C26/00 ,  Y10S428/935 ,  Y10S428/937 ,  Y10T428/12729 ,  Y10T428/12896 ,  Y10T428/12944