公开(公告)号：US20110061813A1

公开(公告)日：2011-03-17

申请号：US12883761

申请日：2010-09-16

申请人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

发明人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

IPC分类号： H01L21/465

CPC分类号： H01J37/32834 ,  H01J37/32091

摘要： A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.

摘要翻译： 一种等离子体处理装置，包括：喷淋头，其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件，所述可垂直移动的环形构件被构造成在升高位置形成由所述安装台，所述淋浴喷头和所述环形构件包围的处理空间; 多个气体供给孔，其在所述环状部件的内壁上开口，向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔，以对所述处理空间进行抽真空。

公开(公告)号：US08747609B2

公开(公告)日：2014-06-10

申请号：US12888664

申请日：2010-09-23

申请人： Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

发明人： Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

IPC分类号： H01L21/3065 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/3244 ,  H01J37/3266

摘要： A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.

摘要翻译： 一种等离子体处理装置，包括安装在用于处理基板的处理室内的淋浴喷头，面对用于将基板安装在其上的安装台，并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔，其形成为穿过所述淋浴喷头，从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元，其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。

公开(公告)号：US08852386B2

公开(公告)日：2014-10-07

申请号：US12883761

申请日：2010-09-16

申请人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

发明人： Hachishiro Iizuka ,  Yuki Mochizuki ,  Jun Abe

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/32834 ,  H01J37/32091

摘要： A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.

摘要翻译： 一种等离子体处理装置，包括：喷淋头，其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件，并且构造成在升高位置形成由所述安装台，所述淋浴头和所述环形构件包围的处理空间; 多个气体供给孔，其在所述环状部件的内壁上开口，向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔，以对所述处理空间进行抽真空。

公开(公告)号：US20110067815A1

公开(公告)日：2011-03-24

申请号：US12888664

申请日：2010-09-23

申请人： Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

发明人： Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

IPC分类号： H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/3266

摘要： A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.

摘要翻译： 一种等离子体处理装置，包括安装在用于处理基板的处理室内的淋浴喷头，面对用于将基板安装在其上的安装台，并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔，其形成为穿过所述淋浴喷头，从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元，其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。

公开(公告)号：US20100307686A1

公开(公告)日：2010-12-09

申请号：US12793859

申请日：2010-06-04

申请人： Hachishiro Iizuka ,  Yuki Mochizuki

发明人： Hachishiro Iizuka ,  Yuki Mochizuki

IPC分类号： C23F1/08 ,  C23C16/44

CPC分类号： H01L21/67115 ,  H01L21/67103

摘要： Provided is a substrate processing apparatus capable of effectively heating each component without generating an abnormal electric discharge. The substrate processing apparatus 10 includes: a depressurizable processing chamber 11; a susceptor 12 provided within the processing chamber 11; a shower head 27 provided at a ceiling portion of the processing chamber 11 so as to face the susceptor 12; a focus ring 24 provided at an outer peripheral portion of a top surface of the susceptor 12; and a ring-shaped infrared radiant heater 26 provided in a vicinity of the focus ring 24. The heater 26 includes an infrared radiator 26a and a quartz ring 26b for sealing the infrared radiator 26a therein.

摘要翻译： 提供一种能够有效地加热各部件而不产生异常放电的基板处理装置。 基板处理装置10包括：可减压处理室11; 设置在处理室11内的基座12; 设置在处理室11的顶部以便与基座12相对的淋浴头27; 设置在基座12的上表面的外周部的聚焦环24; 以及设置在聚焦环24附近的环状红外辐射加热器26.加热器26包括用于将红外辐射体26a密封在其中的红外辐射体26a和石英环26b。

公开(公告)号：US08852387B2

公开(公告)日：2014-10-07

申请号：US13036369

申请日：2011-02-28

申请人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

发明人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

IPC分类号： H01L21/3065 ,  C23C16/455 ,  C23F1/08 ,  H05H1/24

CPC分类号： C23F1/08 ,  C23C16/455 ,  H01L21/3065 ,  H05H1/24

摘要： There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.

摘要翻译： 提供了一种等离子体处理装置，包括：淋浴喷头，安装在处理室内，用于处理基板并面对用于安装基板的安装台; 多个排气孔形成在淋浴喷头上，从喷淋头的相对表面延伸到相对表面; 多个可打开和可闭合的触发孔，其通过淋浴喷头形成，从喷淋头的相对表面延伸到相对表面，并且构造成允许等离子体从面对表面泄漏到相对表面; 以及安装在设置在所述淋浴喷头的相对表面侧的排气空间中的分隔壁，以将所述排气空间分成多个区域，每个区域与一个或多个触发孔连通。

公开(公告)号：US20110214814A1

公开(公告)日：2011-09-08

申请号：US13036369

申请日：2011-02-28

申请人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

发明人： Hachishiro Iizuka ,  Jun Abe ,  Akihiro Yokota ,  Takeshi Ohse

IPC分类号： C23F1/08 ,  H05H1/24

CPC分类号： C23F1/08 ,  C23C16/455 ,  H01L21/3065 ,  H05H1/24

摘要： There is provided a plasma processing apparatus including: a shower head installed within a processing chamber for processing a substrate and facing a mounting table for mounting the substrate; a multiple number of gas exhaust holes formed through the shower head to be extended from a facing surface of the shower head to an opposite surface to the facing surface; a multiple number of openable and closable trigger holes formed through the shower head to be extended from the facing surface of the shower head to the opposite surface, and configured to allow plasma leakage from the facing surface to the opposite surface; and a partition wall installed in a gas exhaust space provided on the side of the opposite surface of the shower head to divide the gas exhaust space into a multiple number of regions, each region communicating with one or more trigger holes.

摘要翻译： 提供了一种等离子体处理装置，包括：淋浴喷头，安装在处理室内，用于处理基板并面对用于安装基板的安装台; 多个排气孔形成在淋浴喷头上，从喷淋头的相对表面延伸到相对表面; 多个可打开和可闭合的触发孔，其通过淋浴喷头形成，从喷淋头的相对表面延伸到相对表面，并且构造成允许等离子体从面对表面泄漏到相对表面; 以及安装在设置在所述淋浴喷头的相对表面侧的排气空间中的分隔壁，以将所述排气空间分成多个区域，每个区域与一个或多个触发孔连通。

公开(公告)号：US08758511B2

公开(公告)日：2014-06-24

申请号：US11660091

申请日：2005-08-12

申请人： Hachishiro Iizuka ,  Akira Yasumuro ,  Koichiro Kimura ,  Norihiko Tsuji

发明人： Hachishiro Iizuka ,  Akira Yasumuro ,  Koichiro Kimura ,  Norihiko Tsuji

IPC分类号： C23C16/448 ,  C23C16/455 ,  C23C16/00 ,  C23C16/44 ,  C23C16/458

CPC分类号： C23C16/4402 ,  C23C16/4401 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4585

摘要： A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.

摘要翻译： 一种成膜装置，包括用于供给液体或气液混合物的原料的原料供给部，用于蒸发原料以形成原料气体的原料蒸发部，以及用于导入 使用所形成的原料气体的成膜处理，以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。 过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上，循环支撑构件通过沿着挤压方向的加载不如外边缘而变形，并被固定到 传送路径的内表面处于压缩状态，在传送路径的内表面和支撑构件之间。

公开(公告)号：US08674607B2

公开(公告)日：2014-03-18

申请号：US13115193

申请日：2011-05-25

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： H01J7/24

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3343 ,  Y10T137/8593

摘要： There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.

摘要翻译： 提供了一种用于在处理室中产生感应耦合等离子体并在容纳在处理室中的基板上进行处理的等离子体处理装置。 等离子体处理装置包括安装成覆盖处理室的顶部开口并具有电介质窗口的上盖; 高频线圈，设置在所述处理室的外侧的所述电介质窗口的上方; 由上盖支撑并安装在电介质窗下的气体供给机构。 这里，气体供给机构包括具有通孔的板的层叠体。 此外，气体供给机构构成为通过安装在板之间或板与介电窗口之间的槽状气体通道，在水平方向上将处理气体供给到处理室，并且槽状气体通道的端部 通向通孔的边缘。

公开(公告)号：US08366828B2

公开(公告)日：2013-02-05

申请号：US12406339

申请日：2009-03-18

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23F16/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449

摘要： A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table.

摘要翻译： 淋浴头设置在处理室中，用于在其中处理基板以面对安装台，用于安装在基板上，并由多个板状构件层叠的层叠体形成。 喷头用于向衬底供应一种或多种淋浴形式的气体。 淋浴头包括：第一气体供给单元，用于通过设置在层叠体中的第一气体注入口向基板供给第一气体;第二气体供给单元，其通过设置在层叠体中的第二气体注入开口供给第二气体;第二气体供给单元， 通过层叠体形成的多个排气孔，用于通过层叠体的一部分排出气体，面向安装台的部分。