Illumination-sensor calibration methods, and exposure methods and apparatus and device-manufacturing methods including same, and reflective masks used in same
    1.
    发明授权
    Illumination-sensor calibration methods, and exposure methods and apparatus and device-manufacturing methods including same, and reflective masks used in same 有权
    照明传感器校准方法以及包括其的曝光方法以及装置和装置制造方法以及在其中使用的反射罩

    公开(公告)号:US08018577B2

    公开(公告)日:2011-09-13

    申请号:US11437595

    申请日:2006-05-19

    IPC分类号: G03B27/54

    摘要: Exposure apparatus are disclosed that can control, to high precision, exposure doses on a photosensitive substrate of a mask pattern defined on a reflective mask as the pattern is being exposed on the substrate using a projection-optical system. An exemplary apparatus includes a first illumination sensor for detecting light that is incident on a reflective mask from an illumination system and a second illumination sensor for detecting light that has propagated from the illumination system to a reference reflective surface on the reflective mask, reflected from the reference reflective surface, and arrived at an image surface of the projection-optical system. Calibration of the first sensor is performed based on detection data obtained by the first sensor and detection data obtained by the second sensor. Exposure of the substrate is controlled based on the detection data obtained by the calibrated first sensor.

    摘要翻译: 公开了一种曝光装置,其可以使用投影光学系统在图案被曝光在基板上的同时,在限定在反射掩模上的掩模图案的感光基板上高精度地控制曝光量。 示例性装置包括用于检测从照明系统入射到反射掩模上的光的第一照明传感器和用于检测从照明系统传播到反射掩模上的参考反射表面的光的第二照明传感器, 参考反射表面,并到达投影光学系统的图像表面。 基于由第一传感器获得的检测数据和由第二传感器获得的检测数据执行第一传感器的校准。 基于由校准的第一传感器获得的检测数据来控制基板的曝光。

    Illumination-sensor calibration methods, and exposure methods and apparatus and device-manufacturing methods including same, and reflective masks used in same
    2.
    发明申请
    Illumination-sensor calibration methods, and exposure methods and apparatus and device-manufacturing methods including same, and reflective masks used in same 有权
    照明传感器校准方法以及包括其的曝光方法以及装置和装置制造方法以及在其中使用的反射罩

    公开(公告)号:US20060290916A1

    公开(公告)日:2006-12-28

    申请号:US11437595

    申请日:2006-05-19

    IPC分类号: G03B27/32

    摘要: Exposure apparatus are disclosed that can control, to high precision, exposure doses on a photosensitive substrate of a mask pattern defined on a reflective mask as the pattern is being exposed on the substrate using a projection-optical system. An exemplary apparatus includes a first illumination sensor for detecting light that is incident on a reflective mask from an illumination system and a second illumination sensor for detecting light that has propagated from the illumination system to a reference reflective surface on the reflective mask, reflected from the reference reflective surface, and arrived at an image surface of the projection-optical system. Calibration of the first sensor is performed based on detection data obtained by the first sensor and detection data obtained by the second sensor. Exposure of the substrate is controlled based on the detection data obtained by the calibrated first sensor.

    摘要翻译: 公开了一种曝光装置,其可以使用投影光学系统在图案被曝光在基板上的同时,在限定在反射掩模上的掩模图案的感光基板上高精度地控制曝光量。 示例性装置包括用于检测从照明系统入射到反射掩模上的光的第一照明传感器和用于检测从照明系统传播到反射掩模上的参考反射表面的光的第二照明传感器, 参考反射表面,并到达投影光学系统的图像表面。 基于由第一传感器获得的检测数据和由第二传感器获得的检测数据执行第一传感器的校准。 基于由校准的第一传感器获得的检测数据来控制基板的曝光。

    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
    4.
    发明授权
    Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures 失效
    带电粒子束微光刻设备和包括在子场曝光期间进行的光学校正的方法

    公开(公告)号:US06657207B2

    公开(公告)日:2003-12-02

    申请号:US09805732

    申请日:2001-03-13

    IPC分类号: G21G500

    摘要: Charged-particle-beam (CPB) apparatus and methods are disclosed that achieve efficient correction of imaging conditions such as shape-astigmatic aberrations, etc., caused by differences in the distribution of pattern elements within respective subfields of the reticle. Indices based on the pattern-element distributions within subfields are stored, together with corresponding optical-correction data for the subfields. As the subfields are exposed, respective data are recalled and the exposure is performed with optical corrections made according to the data. The indices are determined beforehand from pattern data at time of reticle manufacture. The tabulated data are rewritable with changes in apparatus parameters such as beam-current density and beam-divergence angle. Intermediate data can be determined by interpolation of tabulated data.

    摘要翻译: 公开了充电粒子束(CPB)装置和方法,其实现由掩模版的各个子场内的图案元素分布的差异导致的成像条件(诸如形像像差等)的有效校正。 基于子场内的图案元素分布的指数与子场的相应光学校正数据一起被存储。 当子场曝光时,调用相应的数据,并根据数据进行光学校正来进行曝光。 这些指标是从标线制造时的图形数据预先确定的。 列表数据可以随设备参数的变化而改写,例如光束电流密度和光束发散角。 中间数据可以通过插入表格数据来确定。

    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
    6.
    发明申请
    Substrate conveyor apparatus, substrate conveyance method and exposure apparatus 有权
    基板输送装置,基板输送方法及曝光装置

    公开(公告)号:US20060087638A1

    公开(公告)日:2006-04-27

    申请号:US11235130

    申请日:2005-09-27

    IPC分类号: G03B27/58

    摘要: With respect to a substrate conveyor apparatus that, being a substrate conveyor apparatus that carries substrates on which patterns are formed, carries the substrates in a state protected by a protective cover when the substrate is not used, a substrate conveyor apparatus having a cover protection means that conceals the inner surface of the protective cover when the substrate is used.

    摘要翻译: 对于作为基板输送装置的基板输送装置,其特征在于,作为基板输送装置,当基板不使用时,承载基板的图案形成在基板上的状态下,将基板保持在被保护盖保护的状态的基板输送装置,具有盖保护装置 当使用基板时,隐藏保护盖的内表面。

    Methods and apparatus for detecting and correcting reticle deformations in microlithography
    7.
    发明授权
    Methods and apparatus for detecting and correcting reticle deformations in microlithography 失效
    在微光刻中检测和校正掩模版变形的方法和装置

    公开(公告)号:US06835511B2

    公开(公告)日:2004-12-28

    申请号:US10132343

    申请日:2002-04-24

    IPC分类号: G03C500

    摘要: Microlithography methods and apparatus are disclosed that allow reticle deformations to be measured and corrected quickly and accurately. Multiple alignment marks (comprising a “first set” and “second set” of reticle-position-measurement marks) are formed on the reticle. A first set of reticle-deformation data is obtained by detecting the positions of at least some of the first set of reticle-position-measurement marks using an inspection device that is separate from the microlithography apparatus with which the reticle will be used for making lithographic exposures. The first set of reticle-deformation data is stored in a first memory. The reticle then is mounted in the microlithography apparatus, in which a second set of reticle-deformation data is obtained by detecting the positions of at least some of the second set of reticle-position-measurement marks. The second set of reticle-deformation data is stored in a second memory. Lithographic exposures are performed, using the reticle so measured, while correcting the respective positions and/or deformations of the respective subfields on the fly, according to both sets of reticle-deformation data recalled from the respective memories.

    摘要翻译: 公开了微光刻方法和装置,其允许标线变形被快速和准确地测量和校正。 在掩模版上形成多个对准标记(包括标线片位置测量标记的“第一组”和“第二组”)。 使用与使用光掩膜将用于制作光刻的微光刻设备分开的检查装置来检测第一组掩模版位置测量标记中的至少一些的位置来获得第一组掩模版变形数据 曝光。 第一组掩模版变形数据被存储在第一存储器中。 然后将掩模版安装在微光刻设备中,其中通过检测第二组掩模版位置测量标记中的至少一些的位置来获得第二组掩模版变形数据。 第二组掩模版变形数据存储在第二存储器中。 根据从各个存储器回忆的两组标线片变形数据,使用如此测量的掩模板,同时在飞行中校正各个子场的各个位置和/或变形,进行平版印刷曝光。

    Mask and exposure apparatus
    8.
    发明申请
    Mask and exposure apparatus 有权
    面膜和曝光装置

    公开(公告)号:US20070190433A1

    公开(公告)日:2007-08-16

    申请号:US11707003

    申请日:2007-02-16

    IPC分类号: A47G1/12 G03F1/14 G03F1/00

    摘要: An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

    摘要翻译: 曝光装置将图案从掩模转印到敏感基板上。 胶片保护面罩和胶片框架之间的掩模和胶片之间,保持膜与掩模的表面间隔开。 该膜对于必需波长的辐射具有第一透射率,并且对于不需要的波长的辐射具有第二透射率; 第一透射率高于第二透射率。 这部电影可能反映或吸收不必要的波长。 所需的波长可以是曝光波长,并且也可以在极紫外辐射的范围内。 掩模周围的气氛从施加到膜的一个表面的压力和施加的压力之间的差异的速度从空气气氛转变到减压气氛,或从减压气氛转变到空气气氛 到要保持在预定值或更小的膜的另一表面。

    Apparatus and methods for mask/substrate alignment in charged-particle-beam pattern-transfer
    9.
    发明授权
    Apparatus and methods for mask/substrate alignment in charged-particle-beam pattern-transfer 失效
    带电粒子束图案转印中的掩模/基板对准的装置和方法

    公开(公告)号:US06965114B2

    公开(公告)日:2005-11-15

    申请号:US10227190

    申请日:2002-08-22

    摘要: Methods and apparatus for alignment of masks and wafers in charged-particle-beam (CPB) pattern-transfer use optical position sensors to determine the positions of a mask or a mask stage with respect to an axis of a CPB optical system. The optical position sensor uses optical reference marks provided on the mask or mask stage. Determination of the position of the mask of the mask stage permits a coarse alignment of the mask or the mask stage. CPB reference marks are provided on masks, mask stages, wafers, and wafer stages, permitting alignment of the mask stage or the mask with respect to the wafer stage or wafer, respectively, using the charged particle beam. The charged particle beam is scanned with respect to the wafer or wafer-stage CPB reference marks to determine a deflection corresponding to an alignment of the CPB reference marks of the mask and wafer (or mask stage and wafer stage). Use of the charged particle beam for such alignment permits a fine alignment.

    摘要翻译: 用于使带电粒子束(CPB)图案转印中的掩模和晶片对准的方法和装置使用光学位置传感器来确定掩模或掩模台相对于CPB光学系统的轴的位置。 光学位置传感器使用设在掩模或掩模台上的光学参考标记。 确定掩模台的掩模的位置允许掩模或掩模台的粗略对准。 CPB参考标记提供在掩模,掩模级,晶片和晶片级上,允许使用带电粒子束分别使掩模级或掩模相对于晶片级或晶片对准。 相对于晶片或晶片级CPB参考标记扫描带电粒子束,以确定对应于掩模和晶片(或掩模台和晶片台)的CPB参考标记的对准的偏转。 使用带电粒子束进行这种对准允许精细对准。

    Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
    10.
    发明授权
    Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same 失效
    用于带电粒子束(CPB)微光刻的基准标记体,其制造方法,以及包括其的CPB微光刻设备

    公开(公告)号:US06632722B2

    公开(公告)日:2003-10-14

    申请号:US10068172

    申请日:2002-02-06

    IPC分类号: H01L2176

    摘要: Fiducial mark bodies are provided for use in CPB microlithography apparatus and methods. Such bodies are especially useful for attachment to the wafer stage of such apparatus, for measuring a distance between a reference position of the CPB-optical system of the apparatus and a reference position of an optical-based alignment sensor of the apparatus. The mark bodies provide improved accuracy of these and other positional measurements. A typical mark body is made of a substrate plate (e.g., quartz or quartz-ceramic) having a low coefficient of thermal expansion. Mark elements are defined on the substrate plate by a layer of heavy metal (e.g. are Ta, W, or Pt). The mark body includes a surficial or interior layer of an electrically conductive light metal that prevents electrostatic charging of the mark body and can be connected to ground.

    摘要翻译: 提供了用于CPB微光刻设备和方法的基准标记体。 这样的主体对于附接到这种装置的晶片台是特别有用的,用于测量装置的CPB-光学系统的基准位置与装置的基于光学的对准传感器的基准位置之间的距离。 标记体提供了这些和其他位置测量的改进的精度。 典型的标记体由具有低热膨胀系数的衬底板(例如石英或石英陶瓷)制成。 标记元件通过重金属层(例如Ta,W或Pt)在衬底板上限定。 标记体包括导电轻金属的表层或内层,其防止标记体的静电充电并且可以连接到地面。