公开(公告)号：US20060171579A1

公开(公告)日：2006-08-03

申请号：US11132508

申请日：2005-05-19

申请人： Hak-joo Lee ,  Shin Hur ,  Jae-hyun Kim ,  Seung-woo Han ,  Jung-yup Kim ,  Ki-ho Cho

发明人： Hak-joo Lee ,  Shin Hur ,  Jae-hyun Kim ,  Seung-woo Han ,  Jung-yup Kim ,  Ki-ho Cho

IPC分类号： G06K9/00 ,  G01N19/04

CPC分类号： G01N19/02 ,  G01N3/42 ,  G01N19/04

摘要： Disclosed herein is an apparatus for measuring adhesive and frictional properties of a polymer hemisphere relative to a contact plate provided in the apparatus. The apparatus comprise a body having a movable table installed to move along an X-axis and Y-axis and a vertical column positioned at a rear side of the movable table, a sample mount provided on the movable table and having a mirror to reflect surface images of a horizontal contact plate, a head assembly located at a front side of the column and having a polymer hemisphere used to press a surface of the contact plate to implement an adhesive force test, a camera device located at a front side of the mirror to capture the surface images of the contact plate during the adhesive force test, and a control device for analyzing various data inputted thereto during the adhesive force test.

摘要翻译： 本文公开了一种用于测量聚合物半球相对于设备中提供的接触板的粘合剂和摩擦性能的装置。 该装置包括：主体，其具有安装成沿着X轴和Y轴移动的可移动台和位于可移动台的后侧的垂直柱;设置在可移动台上的具有反射表面的反射镜 水平接触板的图像，位于柱的前侧的头部组件，并且具有用于按压接触板的表面以实现粘合力测试的聚合物半球，位于镜的前侧的相机装置 以在粘合力测试期间捕获接触板的表面图像，以及用于在粘合力测试期间分析输入到其中的各种数据的控制装置。

公开(公告)号：US07886571B2

公开(公告)日：2011-02-15

申请号：US11132508

申请日：2005-05-19

申请人： Hak-joo Lee ,  Shin Hur ,  Jae-hyun Kim ,  Seung-woo Han ,  Jung-yup Kim ,  Ki-ho Cho

发明人： Hak-joo Lee ,  Shin Hur ,  Jae-hyun Kim ,  Seung-woo Han ,  Jung-yup Kim ,  Ki-ho Cho

IPC分类号： G06K9/00 ,  G01D18/00

CPC分类号： G01N19/02 ,  G01N3/42 ,  G01N19/04

摘要： Disclosed herein is an apparatus for measuring adhesive and frictional properties of a polymer hemisphere relative to a contact plate provided in the apparatus. The apparatus comprise a body having a movable table installed to move along an X-axis and Y-axis and a vertical column positioned at a rear side of the movable table, a sample mount provided on the movable table and having a mirror to reflect surface images of a horizontal contact plate, a head assembly located at a front side of the column and having a polymer hemisphere used to press a surface of the contact plate to implement an adhesive force test, a camera device located at a front side of the mirror to capture the surface images of the contact plate during the adhesive force test, and a control device for analyzing various data inputted thereto during the adhesive force test.

摘要翻译： 本文公开了一种用于测量聚合物半球相对于设备中提供的接触板的粘合剂和摩擦性能的装置。 该装置包括：主体，其具有安装成沿着X轴和Y轴移动的可移动台和位于可移动台的后侧的垂直柱;设置在可移动台上的具有反射表面的反射镜 水平接触板的图像，位于柱的前侧的头部组件，并且具有用于按压接触板的表面以实现粘合力测试的聚合物半球，位于镜的前侧的相机装置 以在粘合力测试期间捕获接触板的表面图像，以及用于在粘合力测试期间分析输入到其中的各种数据的控制装置。

公开(公告)号：US06626968B2

公开(公告)日：2003-09-30

申请号：US09861697

申请日：2001-05-21

申请人： Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Kwang-bok Kim ,  Jae-phil Boo ,  Jong-won Lee ,  Sang-rok Hah ,  Kyung-hyun Kim ,  Chang-ki Hong

发明人： Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Kwang-bok Kim ,  Jae-phil Boo ,  Jong-won Lee ,  Sang-rok Hah ,  Kyung-hyun Kim ,  Chang-ki Hong

IPC分类号： C09G102

CPC分类号： H01L21/76224 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053

摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

公开(公告)号：US06248667B1

公开(公告)日：2001-06-19

申请号：US09527458

申请日：2000-03-17

申请人： Jung-yup Kim ,  Chang-ki Hong

发明人： Jung-yup Kim ,  Chang-ki Hong

IPC分类号： H01L21302

CPC分类号： H01L21/31053 ,  H01L21/318 ,  H01L21/3185 ,  Y10S438/959

摘要： A chemical mechanical polishing (CMP) method using a double polishing stopper by which it is possible to prevent a dishing phenomenon and a variation in the thickness of a polishing stopper, including the steps of stacking polishing stoppers to form the double polishing stopper on a semiconductor substrate, forming a trench, stacking an isolation layer, performing a first CMP process using a second polishing stopper, removing the second polishing stopper, and performing a second CMP process using a first polishing stopper. It is possible to remove the second polishing stopper by additionally interposing an etching stopper between the polishing stoppers which form the double polishing stopper.

摘要翻译： 一种使用双重抛光止动器的化学机械抛光（CMP）方法，其可以防止抛光停止的凹陷现象和厚度的变化，包括堆叠抛光阻挡件以在半导体上形成双重抛光阻挡件的步骤 衬底，形成沟槽，堆叠隔离层，使用第二抛光止挡件执行第一CMP处理，去除第二抛光阻挡件，以及使用第一抛光停止件进行第二CMP处理。 通过在形成双重抛光止动件的抛光止动器之间附加插入蚀刻止动件可以移除第二抛光止动件。

公开(公告)号：US06723644B2

公开(公告)日：2004-04-20

申请号：US10094994

申请日：2002-03-12

申请人： Jung-yup Kim ,  Sang-rok Hah

发明人： Jung-yup Kim ,  Sang-rok Hah

IPC分类号： H01L2131

CPC分类号： H01L21/31053 ,  H01L21/31055

摘要： A method of manufacturing a semiconductor device is capable of preventing a dishing phenomenon from occurring without using dummy patterns. A plurality of conductive patterns are formed along the entire surface of a semiconductor substrate with an irregular pattern density. The conductive patterns have a first stopper layer at the top thereof. An interlayer insulating layer is formed on the conductive patterns. Next, a second stopper layer is formed on the interlayer insulating layer. An etching mask is formed on the second stopper layer so as to expose a first region having a conductive pattern density that is higher than that of another region(s). By using the etching mask, the second stopper layer and part of the interlayer insulating layer are etched at the first region. The resultant structure is then first polished to expose the first stopper layer at the first region, by using a slurry that provides a polishing rate for the interlayer insulating layer that is higher than that for either the first and second stopper layers. The resultant structure is then polished for a second time to remove the second stopper layer form the region(s) of lower pattern density, by using a slurry that provides a polishing rate that is higher for the second stopper layer than for either the first stopper layer and the interlayer insulating layer.

摘要翻译： 制造半导体器件的方法能够防止在不使用虚设图案的情况下发生凹陷现象。 沿着半导体衬底的整个表面以不规则图案密度形成多个导电图案。 导电图案在其顶部具有第一阻挡层。 在导电图案上形成层间绝缘层。 接着，在层间绝缘层上形成第二阻挡层。 在第二阻挡层上形成蚀刻掩模，以暴露具有高于另一区域的导电图案密度的第一区域。 通过使用蚀刻掩模，在第一区域处蚀刻第二阻挡层和层间绝缘层的一部分。 然后首先对所得到的结构进行抛光，以通过使层间绝缘层的抛光速率高于第一和第二阻挡层的抛光速率的浆料在第一区域露出第一阻挡层。 然后将所得到的结构第二次抛光，通过使用提供比第二塞子层更高的抛光速率的浆料，而不是第一塞子的抛光速率，从而形成具有较低图案密度的区域的第二塞子层 层和层间绝缘层。

公开(公告)号：US06518157B2

公开(公告)日：2003-02-11

申请号：US09917601

申请日：2001-07-27

申请人： Gee-won Nam ,  Gi-jong Park ,  Hong-kyu Hwang ,  Jun-shik Bae ,  Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Sang-rok Hah

发明人： Gee-won Nam ,  Gi-jong Park ,  Hong-kyu Hwang ,  Jun-shik Bae ,  Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Sang-rok Hah

IPC分类号： H01L2144

CPC分类号： H01L21/31056 ,  H01L21/31053 ,  H01L21/76819

摘要： An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.

公开(公告)号：US20070155178A1

公开(公告)日：2007-07-05

申请号：US11712931

申请日：2007-03-01

申请人： Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Kwang-bok Kim ,  Jae-phill Boo ,  Jong-won Lee ,  Sang-rok Hah ,  Kyung-hyun Kim ,  Chang-ki Hong

发明人： Young-rae Park ,  Jung-yup Kim ,  Bo-un Yoon ,  Kwang-bok Kim ,  Jae-phill Boo ,  Jong-won Lee ,  Sang-rok Hah ,  Kyung-hyun Kim ,  Chang-ki Hong

IPC分类号： H01L21/306 ,  H01L21/461 ,  B44C1/22 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01L21/76224 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053

摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

摘要翻译： 公开了一种用于材料层表面例如氧化硅层的化学机械抛光的浆料组合物。 暴露于浆料的第一材料表面显示出亲水性，而第二材料层，例如其表面也暴露于浆料的多晶硅层，表现出疏水性，因此用作抛光停止层。 浆料组合物基本上由水，磨料颗粒和具有亲水和疏水官能团的聚合物添加剂组成。

公开(公告)号：US06585570B2

公开(公告)日：2003-07-01

申请号：US09848371

申请日：2001-05-03

申请人： Jung-yup Kim ,  Young-rae Park ,  Sang-rok Hah

发明人： Jung-yup Kim ,  Young-rae Park ,  Sang-rok Hah

IPC分类号： B24B1900

CPC分类号： B24B37/04 ,  B24B1/04 ,  B24B57/02

摘要： In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry. The slurry supplying apparatus includes a tank for holding a slurry, acoustic energy sources for applying acoustic energy to the slurry held within the tank, a slurry circulating line for circulating the slurry drawn out of the tank, which is connected to the tank, a filter for filtering out abrasive particle clumps having a diameter greater than a reference size from the slurry, which is disposed in the slurry circulating line, and a slurry supplying line for supplying the slurry from the slurry circulating line to a CMP equipment.

摘要翻译： 在用于供应用于化学机械抛光（CMP）工艺的浆料的方法和设备中，提供了浆料预处理以使浆料中磨料颗粒的尺寸最小化。 在浆料供给方法中，在向浆料中施加声能以使浆料中的附聚磨料颗粒去聚集之前，将任何剩余的具有大于参考尺寸的直径的过大的磨料颗粒从浆料中过滤掉。 声音能量施加步骤和过滤步骤在循环淤浆期间重复进行预定时间段。 浆料供给装置包括用于保持浆料的罐，用于向保持在罐内的浆料提供声能的声能源，用于使从罐中抽出的浆料循环的浆料循环管线，其与罐连接，过滤器 用于从布置在浆料循环管线中的浆料中过滤出具有大于参考尺寸的直径的磨料颗粒团，以及用于将浆料从淤浆循环管线供应到CMP设备的浆料供应管线。

公开(公告)号：US06498102B2

公开(公告)日：2002-12-24

申请号：US09803741

申请日：2001-03-12

申请人： Jung-yup Kim ,  Young-rae Park ,  Sang-rok Hah

发明人： Jung-yup Kim ,  Young-rae Park ,  Sang-rok Hah

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.

摘要翻译： 化学机械抛光（CMP）工艺采用二氧化铈基浆料作为研磨剂。 特别地，在半导体衬底上形成氮化物图案，然后在半导体衬底和氮化物图案之上形成氧化物层。 接下来，在氧化物层上形成没有表面台阶的牺牲绝缘层。 然后通过CMP使用二氧化铈基浆料和使用氮化物图案作为塞子来抛光牺牲绝缘层和氧化物层。

公开(公告)号：US06548388B2

公开(公告)日：2003-04-15

申请号：US09805213

申请日：2001-03-14

申请人： Hong-kyu Hwang ,  Young-Rae Park ,  Jung-yup Kim ,  Jeong-sic Jeon ,  Bo-un Yoon ,  Sang-rok Hah

发明人： Hong-kyu Hwang ,  Young-Rae Park ,  Jung-yup Kim ,  Jeong-sic Jeon ,  Bo-un Yoon ,  Sang-rok Hah

IPC分类号： H01L213205

CPC分类号： H01L21/76897 ,  H01L21/28123 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823437 ,  H01L21/823481

摘要： A gate electrode conductive layer is formed on an active region that is recessed relative to field oxide layers so as to define a damascene structure. The gate electrode conductive layer is formed on the active region but is not formed on a field region so that the thickness of an interlayer insulation layer deposited in a succeeding process is reduced, thereby reducing or preventing voids within the interlayer insulation layer. A polysilicon is formed on the bottom of the active region by selective epitaxial growth, thereby minimizing the influence of micro scratches, pits or stringers occurring on the bottom of the active region.