公开(公告)号：US20120249009A1

公开(公告)日：2012-10-04

申请号：US13506626

申请日：2012-05-03

申请人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

IPC分类号： H05B37/00 ,  H01L33/62 ,  H01L33/60

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/30 ,  H01L33/38 ,  H01S5/06213 ,  H01S5/183 ,  H01S5/1835 ,  H01S5/34313

摘要： A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.

摘要翻译： 一种方法，包括：提供晶体管结构，所述晶体管结构包括在半导体发射极和第二半导体类型的集电极区之间的第一半导体类型的基极区; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量的电信号，以在量子尺寸区域辅助下产生从基极区域输出的自发光发射，包括高频的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

公开(公告)号：US20100085995A1

公开(公告)日：2010-04-08

申请号：US12384772

申请日：2009-04-08

申请人： Milton Feng ,  Nick Holonyak,, JR. ,  Gabriel Walter ,  Han Wui Then

发明人： Milton Feng ,  Nick Holonyak,, JR. ,  Gabriel Walter ,  Han Wui Then

IPC分类号： H01S5/00 ,  H01L33/00

CPC分类号： H01S5/06203 ,  H01S5/3095

摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

摘要翻译： 一种用于从半导体器件产生发光的方法包括以下步骤：提供设置在半导体发射极区域和形成邻近基极区域的隧道结的半导体集电极区域之间的半导体基极区域; 在碱性区域中提供显示量子尺寸效应的区域; 提供分别与发射极区域，基极区域和集电极区域耦合的发射极端子，基极端子和集电极端子; 并且相对于发射极端子，基极端子和集电极端子施加电信号以产生从基极区域发出的光。

公开(公告)号：US08005124B2

公开(公告)日：2011-08-23

申请号：US12587895

申请日：2009-10-14

申请人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr.

发明人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr.

IPC分类号： H01S5/00

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01S5/0427 ,  H01S5/10 ,  H01S5/14 ,  H01S5/34

摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.

摘要翻译： 一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

公开(公告)号：US07813396B2

公开(公告)日：2010-10-12

申请号：US12384772

申请日：2009-04-08

申请人： Milton Feng ,  Nick Holonyak, Jr. ,  Gabriel Walter ,  Han Wui Then

发明人： Milton Feng ,  Nick Holonyak, Jr. ,  Gabriel Walter ,  Han Wui Then

IPC分类号： H01S5/34 ,  H01S5/062

CPC分类号： H01S5/06203 ,  H01S5/3095

摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

公开(公告)号：US08179937B2

公开(公告)日：2012-05-15

申请号：US12799083

申请日：2010-04-16

申请人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr. ,  Han Wui Then ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, Jr. ,  Han Wui Then ,  Chao-Hsin Wu

IPC分类号： H01S3/00

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/30 ,  H01L33/38 ,  H01S5/06213 ,  H01S5/183 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.

摘要翻译： 一种表示高频电输入信号分量的高频光信号分量的制造方法包括以下步骤：提供半导体晶体管结构，该半导体晶体管结构包括半导体类型的基极区域，在第二半导体的半导体发射极和集电极区域之间 类型; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量在内的电信号，以在量子尺寸区域辅助的基极区域产生输出自发光发射，包括高频率的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

公开(公告)号：US20100103971A1

公开(公告)日：2010-04-29

申请号：US12587895

申请日：2009-10-14

申请人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR.

发明人： Han Wui Then ,  Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR.

IPC分类号： H01S5/30

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01S5/0427 ,  H01S5/10 ,  H01S5/14 ,  H01S5/34

摘要： A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.

摘要翻译： 一种响应于高频电输入信号产生宽带宽激光发射的方法，包括以下步骤：提供具有集电极，基极和发射极区的异质结双极晶体管器件; 在所述基极区域中提供至少一个量子尺寸区域，并且在所述光学谐振腔中包围所述基极区域的至少一部分; 将包括高频电输入信号的电信号相对于集电极，基极和发射极区域耦合，以引起来自晶体管器件的激光发射; 并降低晶体管激光器件的运行β，以响应高频电信号增强激光发射的光学带宽。

公开(公告)号：US20100272140A1

公开(公告)日：2010-10-28

申请号：US12799083

申请日：2010-04-16

申请人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

IPC分类号： H01S5/042 ,  H05B41/24

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/30 ,  H01L33/38 ,  H01S5/06213 ,  H01S5/183 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.

摘要翻译： 一种表示高频电输入信号分量的高频光信号分量的制造方法包括以下步骤：提供半导体晶体管结构，该半导体晶体管结构包括半导体类型的基极区域，在第二半导体的半导体发射极和集电极区域之间 类型; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量在内的电信号，以在量子尺寸区域辅助的基极区域产生输出自发光发射，包括高频率的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

公开(公告)号：US20100073086A1

公开(公告)日：2010-03-25

申请号：US12284895

申请日：2008-09-25

申请人： Nick Holonyak, JR. ,  Milton Feng ,  Han Wui Then

发明人： Nick Holonyak, JR. ,  Milton Feng ,  Han Wui Then

IPC分类号： H03F3/08

CPC分类号： H03F3/08

摘要： A method for producing an optical output in substantially linear relationship with an electrical AC signal, includes the following steps: providing a light-emitting transistor having emitter, base, and collector regions, and associated respective emitter, base, and collector terminals, the transistor having a light-emitting output port; applying the AC signal to a first input port defined across a given one of the terminals and a common one of the terminals; applying an amplified version of the AC signal to a second input port defined across a further one of the terminals and the common one of the input terminals; and selecting an amplification of the amplified version of the AC signal to substantially cancel a nonlinearity characteristic of the light emitting transistor.

摘要翻译： 一种用于产生与电AC信号基本上线性关系的光输出的方法包括以下步骤：提供具有发射极，基极和集电极区以及相关的各个发射极，基极和集电极端子的发光晶体管，晶体管 具有发光输出端口; 将AC信号施加到限定在给定的一个端子和所述端子中的公共端子之间的第一输入端口; 将AC信号的放大版本应用于跨越另一个终端和所述公共输入终端中的另一个定义的第二输入端口; 以及选择所述AC信号的放大版本的放大，以基本上消除所述发光晶体管的非线性特性。

公开(公告)号：US07888625B2

公开(公告)日：2011-02-15

申请号：US12284895

申请日：2008-09-25

申请人： Nick Holonyak, Jr. ,  Milton Feng ,  Han Wui Then

发明人： Nick Holonyak, Jr. ,  Milton Feng ,  Han Wui Then

IPC分类号： H01J40/14

CPC分类号： H03F3/08

摘要： A method for producing an optical output in substantially linear relationship with an electrical AC signal, includes the following steps: providing a light-emitting transistor having emitter, base, and collector regions, and associated respective emitter, base, and collector terminals, the transistor having a light-emitting output port; applying the AC signal to a first input port defined across a given one of the terminals and a common one of the terminals; applying an amplified version of the AC signal to a second input port defined across a further one of the terminals and the common one of the input terminals; and selecting an amplification of the amplified version of the AC signal to substantially cancel a nonlinearity characteristic of the light emitting transistor.

摘要翻译： 一种用于产生与电AC信号基本上线性关系的光输出的方法包括以下步骤：提供具有发射极，基极和集电极区以及相关的各个发射极，基极和集电极端子的发光晶体管，晶体管 具有发光输出端口; 将AC信号施加到限定在给定的一个端子和所述端子中的公共端子之间的第一输入端口; 将AC信号的放大版本应用于跨越另一个终端和所述公共输入终端中的另一个定义的第二输入端口; 以及选择所述AC信号的放大版本的放大，以基本上消除所述发光晶体管的非线性特性。

公开(公告)号：US08269431B2

公开(公告)日：2012-09-18

申请号：US12802439

申请日：2010-06-07

申请人： Han Wui Then ,  Milton Feng ,  Nick Holonyak, Jr.

发明人： Han Wui Then ,  Milton Feng ,  Nick Holonyak, Jr.

IPC分类号： H04B10/12 ,  H04B10/02 ,  H04B10/00 ,  H05B37/02

CPC分类号： H04B10/50575 ,  H04B10/588

摘要： A method for producing an optical output in substantially linear relationship with an input electrical AC signal, including the following steps: providing a light-emitting transistor having emitter, base, and collector regions, the light-emitting transistor producing light emission from its base region in response to electrical signals applied with respect to the emitter, base, and collector regions; applying a signal derived from the input signal to the light-emitting transistor; deriving a feedback signal from an electrical operating signal of the light-emitting transistor; applying a predistortion factor to the derived feedback signal to produce a predistorted feedback signal; and combining the predistorted feedback signal with the input signal to produce the signal derived from thr input signal; whereby the light emission comprises an optical output in substantially linear relationship with the input signal.

摘要翻译： 一种用于产生与输入电AC信号基本上线性关系的光输出的方法，包括以下步骤：提供具有发射极，基极和集电极区域的发光晶体管，所述发光晶体管从其基极区域产生发光 响应于相对于发射极，基极和集电极区域施加的电信号; 将从所述输入信号导出的信号施加到所述发光晶体管; 从所述发光晶体管的电操作信号导出反馈信号; 将预失真因子应用于导出的反馈信号以产生预失真的反馈信号; 以及将所述预失真反馈信号与所述输入信号组合以产生从所述输入信号得到的信号; 由此发光包括与输入信号基本上线性关系的光输出。